US5449108A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a bump on a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1994-03-15
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Granted: 1995-09-12
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Expires: 2014-03-15
Abstract
Abstract A method for forming a bump on a semiconductor device takes advantage of the solderability difference of the solder paste applied to a solder pad in order to form a bump, so that it does not require an etching process. In addition, a pre-test of the semiconductor device can be carried out in a state that the solder pad is united with a BLM layer, so as to prove out semiconductor devices of good quality in advance of finishing the formation of the bump and the semiconductor devices of good quality can be applied with a subsequent process.
Inventors
- 👤 Joon S. Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:39
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/012; H10W72/20; H10W72/01251; H10W72/01255; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
237 words
A method for forming a bump on a semiconductor device, the method comprising the steps of: providing a plurality of chrome pads and a plurality of corresponding test pads on one surface of a ceramic heating plate, connecting said plurality of chrome pads with said plurality of corresponding test pads through a plurality of fine chrome lines, respectively, and screen-printing a solder paste on said plurality of chrome pads, so as to form a plurality of solder pads; forming a photoresist layer having a predetermined thickness over an aluminum pad formed on a predetermined portion of a semiconductor device, in such a way as to cover said semiconductor device and said aluminum pad, etching said photoresist layer above said predetermined portion of said semiconductor device to expose said aluminum pad and forming a ball limiting metallurgy (BLM) layer on said aluminum pad; bonding said solder pad with said BLM layer, said solder pad being aligned with said BLM layer and taking advantage of said test pad provided on said ceramic heating plate to examine said semiconductor device for defects; and heating said solder pad of said examined semiconductor device to a temperature not less than a melting point of the solder paste to bond said solder pad with said BLM layer in a solder ball form and to separate said solder pad from said ceramic heating plate, said examined semiconductor being proved out be a good quality.
Claim 2
Independent Claim
237 words
A method for forming a bump on a semiconductor device, the method comprising the steps of: providing a plurality of chrome pads and a plurality of corresponding test pads on one surface of a ceramic heating plate, connecting said plurality of chrome pads with said plurality of corresponding test pads through a plurality of fine chrome lines, respectively, and screen-printing a solder paste on said plurality of chrome pads, so as to form a plurality of solder pads; forming a photoresist layer having a predetermined thickness over an aluminum pad formed on a predetermined portion of a semiconductor device, in such a way as to cover said semiconductor device and said aluminum pad, etching said photoresist layer above said predetermined portion of said semiconductor device to expose said aluminum pad and forming a ball limiting metallurgy (BLM) layer on said aluminum pad; bonding said solder pad with said BLM layer, said solder pad being aligned with said BLM layer and taking advantage of said test pad provided on said ceramic heating plate to examine said semiconductor device for defects; and heating said solder pad of said examined semiconductor device to a temperature not less than a melting point of the solder paste to bond said solder pad with said BLM layer in a solder ball form and to separate said solder pad from said ceramic heating plate, said examined semiconductor being proved out be a good quality.
Claim 3
Independent Claim
193 words
A method of testing a semiconductor device for defects prior to a bump formation, the method comprising the steps of: coupling a plurality of test pads to a plurality of corresponding first pads on a surface of a plate; forming a solder paste on each of the plurality of first pads to form a plurality of solder pads; forming a plurality of conductive layers on each of a plurality of second pads on the semiconductor device including the steps of: forming a photoresist layer over the semiconductor device; etching the photoresist layer above the plurality of second pads to expose the second pads; laying the plurality of conductive layers on the semiconductor device; and removing the photoresist layer and the plurality of conductive layers surrounding the second pads; coupling each corresponding solder pad of the plate to each corresponding conductive layer on the semiconductor device; testing the semiconductor device for defects using the test pads; and transferring the plurality of solder pads from the plate to the conductive layers of the plurality of second pads on the semiconductor device after the testing step indicates the semiconductor device to be of a predetermined quality.
Claim 4
Independent Claim
193 words
A method of testing a semiconductor device for defects prior to a bump formation, the method comprising the steps of: coupling a plurality of test pads to a plurality of corresponding first pads on a surface of a plate; forming a solder paste on each of the plurality of first pads to form a plurality of solder pads; forming a plurality of conductive layers on each of a plurality of second pads on the semiconductor device including the steps of: forming a photoresist layer over the semiconductor device; etching the photoresist layer above the plurality of second pads to expose the second pads; laying the plurality of conductive layers on the semiconductor device; and removing the photoresist layer and the plurality of conductive layers surrounding the second pads; coupling each corresponding solder pad of the plate to each corresponding conductive layer on the semiconductor device; testing the semiconductor device for defects using the test pads; and transferring the plurality of solder pads from the plate to the conductive layers of the plurality of second pads on the semiconductor device after the testing step indicates the semiconductor device to be of a predetermined quality.
Claim 5
Dependent Claim
21 words
The method of claim 2, wherein the step of forming the solder paste comprises the step of screen-printing the solder paste.
Claim 6
Dependent Claim
57 words
The method of claim 2, wherein the transferring step comprises the step of: bonding the solder pads to the conductive layers of the plurality of second pads; heating the solder pads to a temperature greater than a melting point of the solder paste to bond the solder pads to the conductive layers in a solder ball form.
Claim 7
Dependent Claim
36 words
The method of claim 2, wherein the first and second pads are formed of chrome and aluminum, respectively, and the plurality of conductive layers is a ball limiting metallurgy layer having chrome, copper and gold layers.
References Cited (Backward Citations)
US4866507A
Cited
US4831494A
Cited
US4898320A
Cited
US5217597A
Cited
US5266522A
Cited
US5289631A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-09-11 | 1999-03-13 | 1999-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-09-11 | 2003-03-13 | 2003-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-09-11 | 2007-03-13 | 2007-09-12 | $7700.00 | Window Closed / Lapsed |