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Thermoelectric module

Assignee: Tellurex Corp
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Filing: 1994-03-08
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Granted: 1995-09-05
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Expires: 2014-03-08
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Abstract

Abstract A thermoelectric device using a pressed and sintered P-type semiconductor material connected to a crystalline N-type semiconductor material exhibits an unexpectedly high figure-of-merit, Z, and improved mechanical strength.

Inventors

  • 👤 Charles J. Cauchy

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 12:49
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/851; H10N10/852; Y; Y10; Y10S; Y10S257/00; Y10S257/93

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 18 words
A thermoelectric element comprising a pressed and sintered P-type semiconductor material connected to a crystalline N-type semiconductor material.
Claim 2
Dependent Claim 18 words
A thermoelectric element comprising a pressed and sintered P-type semiconductor material connected to a crystalline N-type semiconductor material.
Claim 3
Dependent Claim 15 words
The thermoelectric element of claim 1, wherein said P-type semiconductor material is a Bi-Sb-Te composition.
Claim 4
Dependent Claim 21 words
The thermoelectric element of claim 1, wherein said N-type semiconductor material is a Bi-Sb-Te-Se composition doped with I compounded with Bi.
Claim 5
Dependent Claim 21 words
The thermoelectric element of claim 1, wherein said N-type semiconductor material is a Bi-Sb-Te-Se composition doped with I compounded with Sb.
Claim 6
Dependent Claim 29 words
The thermoelectric element of claim 2, wherein said P-type semiconductor material has the formula Bi a Sb b Te c , wherein 10≦a≦15, 20≦b≦25 and 60≦c≦65 in atomic percents.
Claim 7
Dependent Claim 32 words
The thermoelectric element of claim 3, wherein said Bi-Sb-Te-Se composition has the formula (Bi 2 Te 3 ) 90 (Sb 2 Te 3 ) 5 (Sb 2 Se 3 ) 5 .
Claim 8
Dependent Claim 32 words
The thermoelectric element of claim 4, wherein said Bi-Sb-Te-Se composition has the formula (Bi 2 Te 3 ) 90 (Sb 2 Te 3 ) 5 (Sb 2 Se 3 ) 5 .
Claim 9
Dependent Claim 22 words
A heat pump comprising a thermoelectric element having a pressed and sintered P-type semiconductor material connected to a crystalline N-type semiconductor material.
Claim 10
Dependent Claim 22 words
A heat pump comprising a thermoelectric element having a pressed and sintered P-type semiconductor material connected to a crystalline N-type semiconductor material.
Claim 11
Dependent Claim 23 words
The heat pump of claim 8, wherein said crystalline N-type semiconductor and pressed and sintered P-type semiconductor material is contained between metallized substrates.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-09-04 1999-03-06 1999-09-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-09-04 2003-03-06 2003-09-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-09-04 2007-03-06 2007-09-05 $7700.00 Window Closed / Lapsed

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