US5444270A
Expired / Lapsed
US
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Surface-normal semiconductor optical cavity devices with antireflective layers
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1994-11-04
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Granted: 1995-08-22
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Expires: 2014-11-04
Abstract
Abstract A semiconductor device is provided that includes an optical cavity that is designed to provide a prescribed resonant optical wavelength. The optical cavity includes a mirror structure deposited on top of a substrate and a multi-layer region such as an electroabsorptive region, for example, deposited over the mirror structure. A partial antireflective coating is deposited over the multi-layer region. The mirror structure and the multilayer region have a thickness variation sufficient to yield a resonant optical wavelength that deviates from the prescribed resonant wavelength. The partial antireflective coating has a non-uniform thickness variation that causes the resonant optical wavelength to shift substantially toward the prescribed resonant optical wavelength.
Inventors
- 👤 John E. Cunningham
- 👤 Keith W. Goossen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 20:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; G; G02; G02F; G02F1/00; G02F1/01; G02F1/21; G02F1/218; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H10H20/81; H10H20/814; H10H20/8142; H01S5/0014; H01S5/0042
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
96 words
A semiconductor device designed to have a prescribed resonant optical wavelength, comprising a substrate; an optical cavity, including; a mirror structure deposited on top of said substrate; a multi-layer region deposited over said mirror structure; a partial antireflective coating deposited over said multi-layer region; said mirror structure and said multilayer region having a thickness variation sufficient to yield a resonant optical wavelength that deviates from the prescribed resonant wavelength, said partial antireflective coating having a non-uniform thickness variation, said non-uniform thickness variation causing the resonant optical wavelength to shift substantially toward the prescribed resonant optical wavelength.
Claim 2
Dependent Claim
96 words
A semiconductor device designed to have a prescribed resonant optical wavelength, comprising a substrate; an optical cavity, including; a mirror structure deposited on top of said substrate; a multi-layer region deposited over said mirror structure; a partial antireflective coating deposited over said multi-layer region; said mirror structure and said multilayer region having a thickness variation sufficient to yield a resonant optical wavelength that deviates from the prescribed resonant wavelength, said partial antireflective coating having a non-uniform thickness variation, said non-uniform thickness variation causing the resonant optical wavelength to shift substantially toward the prescribed resonant optical wavelength.
Claim 3
Dependent Claim
39 words
The device of claim 1 wherein said nonuniform thickness variation of the partial antireflective coating is at least equal to a 10% deviation in thickness between a central region of the substrate and a peripheral region of the substrate.
Claim 4
Dependent Claim
13 words
The device of claim 1 wherein said multi-layer region comprises an electroabsorptive region.
Claim 5
Dependent Claim
15 words
The device of claim 3 wherein said electroabsorptive region comprises a multiple quantum well region.
Claim 6
Dependent Claim
46 words
The device of claim 3 wherein said mirror structure comprises alternating undoped layers of AlGaAs and AlAs each having a prescribed thickness of λ/4n, where λ is the prescribed resonance wavelength of the optical cavity and n is the index of refraction of the layer material.
Claim 7
Dependent Claim
20 words
The device of claim 1 further comprising an optically transparent layer disposed between said mirror structure and said multi-layer region.
Claim 8
Dependent Claim
21 words
The device of claim 6 further comprising another optically transparent layer disposed between said multi-layer region and said partial antireflective coating.
Claim 9
Dependent Claim
72 words
A semiconductor device comprising a substrate; a mirror structure deposited on top of said substrate; a multi-layer region deposited over said mirror structure, said mirror structure and said multi-layer region having a nonuniform thickness over the substrate; and a partial antireflective coating deposited over said multi-layer region, said coating having a nonuniform thickness variation that is substantially greater in magnitude than said nonuniform thickness variation of the mirror structure and multilayer region.
Claim 10
Dependent Claim
72 words
A semiconductor device comprising a substrate; a mirror structure deposited on top of said substrate; a multi-layer region deposited over said mirror structure, said mirror structure and said multi-layer region having a nonuniform thickness over the substrate; and a partial antireflective coating deposited over said multi-layer region, said coating having a nonuniform thickness variation that is substantially greater in magnitude than said nonuniform thickness variation of the mirror structure and multilayer region.
Claim 11
Dependent Claim
62 words
The device of claim 8 wherein said nonuniform thickness variation of the partial antireflective coating replicates in sign the thickness variation of the mirror structure and the multi-layer region, said nonuniform thickness variation of the partial antireflective coating being at least equal to a 10% deviation in thickness between a central region of the substrate and a peripheral region of the substrate.
Claim 12
Dependent Claim
13 words
The device of claim 8 wherein said multi-layer region comprises an electroabsorptive region.
Claim 13
Dependent Claim
15 words
The device of claim 10 wherein said electroabsorptive region comprises a multiple quantum well region.
Claim 14
Dependent Claim
46 words
The device of claim 10 wherein said mirror structure comprises alternating undoped layers of AlGaAs and AlAs each having a prescribed thickness of λ/4n, where λ is the prescribed resonance wavelength of the optical cavity and n is the index of refraction of the layer material.
Claim 15
Dependent Claim
17 words
The device of claim 10 wherein said multi-layer region further comprises first and second optically transparent layers.
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