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US5442302A
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Method and apparatus for measuring high-frequency C-V characteristics of MIS device
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1993-12-22
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Granted: 1995-08-15
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Expires: 2013-12-22
Abstract
Abstract A method of measuring the high-frequency C-V characteristics of a MIS (e.g. MOS) device is disclosed. The method comprises the steps of providing the MIS device in a shielding-box shielding the device from an outside electromagnetic light, illuminating the device with a light of a wavelength preventing an induction of excess carriers at the surface of the semiconductor, applying a voltage of a high frequency to a gate electrode of the device, and alternating a sweep direction of the voltage. An apparatus implementing the method is also disclosed. The method and the apparatus accurately measure the MOS capacitance in response to a voltage applied to the gate electrode.
Inventors
- 👤 Nobuyoshi Fujimaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:55
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2601; G01R31/2603
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
90 words
A method of measuring the high-frequency C-V characteristics of a MIS device, comprising the steps of: illuminating the MIS device by means of an illuminant emitting a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 2
Independent Claim
90 words
A method of measuring the high-frequency C-V characteristics of a MIS device, comprising the steps of: illuminating the MIS device by means of an illuminant emitting a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 3
Dependent Claim
27 words
The method as recited as in claim 1, wherein said illuminant comprises a light source and a filter passing a component of light from the light source.
Claim 4
Dependent Claim
28 words
The method as recited in claim 1, wherein the light has a wavelength of at least 500 nm when the MIS device is derived from a silicon wafer.
Claim 5
Dependent Claim
28 words
The method as recited in claim 1, wherein the light has a wavelength of at least 1200 nm when the MIS device is derived from a germanium wafer.
Claim 6
Dependent Claim
28 words
The method as recited in claim 1, wherein the light has a wavelength of at least 800 nm when the MIS device is derived from a gallium-arsenide wafer.
Claim 7
Dependent Claim
28 words
The method as recited in claim 1, wherein the light has a wavelength of at least 850 nm when the MIS device is derived from an indium-phosphide wafer.
Claim 8
Independent Claim
110 words
An apparatus for measuring the high-frequency C-V characteristics of a MIS device, comprising: a shielding-box shielding the MIS device from an outside electromagnetic radiation; an illuminant for illuminating a surface of the MIS device, the illuminant provided within said shielding-box and emitting a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; means for applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and means for measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 9
Independent Claim
110 words
An apparatus for measuring the high-frequency C-V characteristics of a MIS device, comprising: a shielding-box shielding the MIS device from an outside electromagnetic radiation; an illuminant for illuminating a surface of the MIS device, the illuminant provided within said shielding-box and emitting a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; means for applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and means for measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 10
Dependent Claim
27 words
The apparatus as recited as in claim 7, wherein said illuminant comprises a light source and a filter passing a component of light from the light source.
Claim 11
Dependent Claim
28 words
The apparatus as recited in claim 7, wherein the light has a wavelength of at least 500 nm when the MIS device is derived from a silicon wafer.
Claim 12
Dependent Claim
28 words
The apparatus as recited in claim 7, wherein the light has a wavelength of at least 1200 nm when the MIS device is derived from a germanium wafer.
Claim 13
Dependent Claim
28 words
The apparatus as recited in claim 7, wherein the light has a wavelength of at least 800 nm when the MIS device is derived from a gallium-arsenide wafer.
Claim 14
Dependent Claim
28 words
The apparatus as recited in claim 7, wherein the light has a wavelength of at least 850 nm when the MIS device is derived from an indium-phosphide wafer.
Claim 15
Dependent Claim
16 words
The apparatus as recited as in claim 8, wherein the light source comprises an incandescent lamp.
Claim 16
Dependent Claim
16 words
The apparatus as recited as in claim 8, wherein the light source comprises a fluorescent lamp.
Claim 17
Independent Claim
168 words
An apparatus for measuring the high-frequency C-V characteristics of a MIS capacitor, comprising: a shielding-box shielding the MIS capacitor from an outside electromagnetic radiation, said shielding-box having a top wall and a bottom wall; a support mounted to an interior surface of the bottom wall and supporting the MIS capacitor; an illuminant for illuminating a surface of the MIS capacitor, the illuminant provided within said shielding-box and illuminating the MIS capacitor with a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS capacitor are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; and a C-V meter applying a voltage with a high-frequency signal to a gate electrode of the MIS capacitor and changing a sweep direction of said voltage of a sweep width, said C-V meter picking up a vector voltage produced across and a vector current passing through the MIS capacitor to measure the MIS capacitance of the MIS capacitor.
Claim 18
Independent Claim
168 words
An apparatus for measuring the high-frequency C-V characteristics of a MIS capacitor, comprising: a shielding-box shielding the MIS capacitor from an outside electromagnetic radiation, said shielding-box having a top wall and a bottom wall; a support mounted to an interior surface of the bottom wall and supporting the MIS capacitor; an illuminant for illuminating a surface of the MIS capacitor, the illuminant provided within said shielding-box and illuminating the MIS capacitor with a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS capacitor are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; and a C-V meter applying a voltage with a high-frequency signal to a gate electrode of the MIS capacitor and changing a sweep direction of said voltage of a sweep width, said C-V meter picking up a vector voltage produced across and a vector current passing through the MIS capacitor to measure the MIS capacitance of the MIS capacitor.
Claim 19
Dependent Claim
39 words
The apparatus as recited as in claim 7, wherein said illuminant comprises a light source and a filter passing a component of light from the light source so that the transmission factor of said component is at least 60%.
Claim 20
Independent Claim
102 words
A method of measuring the high-frequency C-V characteristics of a MIS device, comprising the steps of: providing a shielding-box shielding the MIS device from an outside electromagnetic radiation; illuminating the MIS device by means of an illuminant emitting a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 21
Independent Claim
102 words
A method of measuring the high-frequency C-V characteristics of a MIS device, comprising the steps of: providing a shielding-box shielding the MIS device from an outside electromagnetic radiation; illuminating the MIS device by means of an illuminant emitting a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 22
Dependent Claim
28 words
The method as recited in claim 17, wherein the light has a wavelength of at least 500 nm when the MIS device is derived from a silicon wafer.
Claim 23
Dependent Claim
28 words
The method as recited in claim 17, wherein the light has a wavelength of at least 1200 nm when the MIS device is derived from a germanium wafer.
Claim 24
Dependent Claim
28 words
The method as recited in claim 17, wherein the light has a wavelength of at least 800 nm when the MIS device is derived from a gallium-arsenide wafer.
Claim 25
Dependent Claim
28 words
The method as recited in claim 17, wherein the light has a wavelength of at least 850 nm when the MIS device is derived from an indium-phosphide wafer.
Claim 26
Independent Claim
91 words
A method of measuring the high-frequency C-V characteristics of a MIS device comprising: a step of illuminating the MIS device with a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; a step of applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and a step of measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 27
Independent Claim
91 words
A method of measuring the high-frequency C-V characteristics of a MIS device comprising: a step of illuminating the MIS device with a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; a step of applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and a step of measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 28
Independent Claim
113 words
An apparatus for measuring the high-frequency C-V characteristics of a MIS device, comprising: means for shielding the MIS device from an outside electromagnetic radiation; means for illuminating a surface of the MIS device, the means for illuminating provided within said means for shielding and using a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; means for applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and means for measuring the MIS capacitance of the MIS device receiving said voltage.
Claim 29
Independent Claim
113 words
An apparatus for measuring the high-frequency C-V characteristics of a MIS device, comprising: means for shielding the MIS device from an outside electromagnetic radiation; means for illuminating a surface of the MIS device, the means for illuminating provided within said means for shielding and using a light having long wavelengths, wherein short wavelengths that generate excess minority carriers at a semiconductor surface of the MIS device are eliminated to form and maintain an equilibrium of an inversion layer of the semiconductor surface; means for applying a voltage with a high-frequency signal to a gate electrode of the MIS device; and means for measuring the MIS capacitance of the MIS device receiving said voltage.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-14 | 1999-02-13 | 1999-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-14 | 2003-02-13 | 2003-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-14 | 2007-02-13 | 2007-08-15 | $7700.00 | Window Closed / Lapsed |