Heterojunction bipolar transistor having particular Ge distributions and gradients

Claim 2

A semiconductor device comprising: an emitter region of a first conductivity type, said emitter region being made of single-crystal Si; a base region of a second conductivity type opposite in polarity to said first conductivity type, said base region being made of Ge-containing single-crystal Si; a first collector region of said first conductivity type, said first collector region being made of Ge-containing single-crystal Si and being adjacent to said base region; a second collector region of said first conductivity type, said second collector region being made of Ge-containing single-crystal Si; said emitter region, said base region and said first and second collector regions forming a heterojunction bipolar transistor; said base region having a first distribution of Ge concentration that is graded as a function of depth of said base region, Ge concentration of said first distribution increasing at a first gradient as a function of depth of said base region from a base-emitter junction to a base-collector junction; said first collector region having a second distribution of Ge concentration graded as a function of depth of said first collector region; said second collector region having a third distribution of Ge concentration graded as a function of depth of said second collector region; a minimum value of Ge concentration of said second distribution being higher than or equal to a maximum value of Ge concentration of said third distribution; and in said vicinity of an interface of said first and second collector regions, Ge concentration of said second distribution in said first collector region decreasing at a second gradient as a function of depth of said first collector region to said interface, Ge concentration of said third distribution in said second collector region decreasing at a third gradient as a function of depth of said second collector region from said interface toward an opposite end of said interface, and said third gradient being smaller than said second gradient.

Claim 3

The device as claimed in claim 1, wherein a peak of Ge concentration is 20 mole % or less.

Claim 4

The device as claimed in claim 1, wherein a peak of Ge concentration is inside said first collector region, and Ge concentration increases at a base-side of said peak and decreases at a second collector-side of said peak as a function of depth of said first collector region.

Claim 5

The device as claimed in claim 3, wherein said peak of Ge concentration is 20 mole % or less.

Claim 6

The device as claimed in claim 1, wherein depth of said first collector region ranges from 20 nm to 60 nm.

Claim 7

The device as claimed in claim 1, wherein said first, second and third gradients are substantially constant.

Claim 8

The device as claimed in claim 1, wherein said base region is p-type, and said emitter region and said first and second collector regions are n-type.

Claim 9

The device as claimed in claim 1, further comprising an MOS field-effect transistor whose source/drain regions have a fourth distribution of Ge concentration graded as a function of depth of said source/drain regions, said fourth distribution being the same as said third distribution of said second collector region.

Claim 10

A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor epitaxial layer of a second conductivity type opposite in polarity to said first conductivity type, said first epitaxial layer being formed on said substrate; a buried region of said second conductivity type, said buried region being formed in said first epitaxial layer and said substrate in the vicinity of an interface of said first epitaxial layer and said substrate; a second semiconductor epitaxial layer of said first conductivity type, said second epitaxial layer being formed on said first epitaxial layer; a base region of said second conductivity type, said base region being formed on said second epitaxial layer and being made of Ge containing single-crystal Si; an emitter region of said first conductivity type, said emitter region being formed to be in contact with said base region and being made of single-crystal Si; a first collector region of said second conductivity type, said first collector region being formed in said first epitaxial layer and being made of Ge-containing single-crystal Si; a second collector region of said second conductivity type, said second collector region being formed in said second epitaxial layer to be in contact with said base region and being made of Ge-containing single-crystal Si; said emitter region, said base region and said first and second collector regions forming a heterojunction bipolar transistor; said base region having a first distribution of Ge concentration that is graded as a function of depth of said base region, Ge concentration of said first distribution increasing at a first gradient as a function of depth of said base region from a base-emitter junction to a base-collector junction; said first collector region having a second distribution of Ge concentration graded as a function of depth of said first collector region; said second collector region having a third distribution of Ge concentration graded as a function of depth of said second collector region; a minimum value of Ge concentration of said second distribution being higher than or equal to a maximum value of Ge concentration of said third distribution; and in said vicinity of an interface of said first and second collector regions, Ge concentration of said second distribution in said first collector region decreasing at a second gradient as a function of depth of said first collector region to said interface, Ge concentration of said third distribution in said second collector region decreasing at a third gradient as a function of depth of said second collector region from said interface toward an opposite end of said interface, and said third gradient being smaller than said second gradient.

Claim 11

A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor epitaxial layer of a second conductivity type opposite in polarity to said first conductivity type, said first epitaxial layer being formed on said substrate; a buried region of said second conductivity type, said buried region being formed in said first epitaxial layer and said substrate in the vicinity of an interface of said first epitaxial layer and said substrate; a second semiconductor epitaxial layer of said first conductivity type, said second epitaxial layer being formed on said first epitaxial layer; a base region of said second conductivity type, said base region being formed on said second epitaxial layer and being made of Ge containing single-crystal Si; an emitter region of said first conductivity type, said emitter region being formed to be in contact with said base region and being made of single-crystal Si; a first collector region of said second conductivity type, said first collector region being formed in said first epitaxial layer and being made of Ge-containing single-crystal Si; a second collector region of said second conductivity type, said second collector region being formed in said second epitaxial layer to be in contact with said base region and being made of Ge-containing single-crystal Si; said emitter region, said base region and said first and second collector regions forming a heterojunction bipolar transistor; said base region having a first distribution of Ge concentration that is graded as a function of depth of said base region, Ge concentration of said first distribution increasing at a first gradient as a function of depth of said base region from a base-emitter junction to a base-collector junction; said first collector region having a second distribution of Ge concentration graded as a function of depth of said first collector region; said second collector region having a third distribution of Ge concentration graded as a function of depth of said second collector region; a minimum value of Ge concentration of said second distribution being higher than or equal to a maximum value of Ge concentration of said third distribution; and in said vicinity of an interface of said first and second collector regions, Ge concentration of said second distribution in said first collector region decreasing at a second gradient as a function of depth of said first collector region to said interface, Ge concentration of said third distribution in said second collector region decreasing at a third gradient as a function of depth of said second collector region from said interface toward an opposite end of said interface, and said third gradient being smaller than said second gradient.

Claim 12

The device as claimed in claim 9, wherein a peak of Ge concentration is 20 mole % or less.

Claim 13

The device as claimed in claim 9, wherein a peak of Ge concentration is inside said first collector region, and Ge concentration increases at a base-side of said peak and decreases at a second collector-side of said peak as a function of depth of said first collector region.

Claim 14

The device as claimed in claim 11, wherein said peak of Ge concentration is 20 mole % or less.

Claim 15

The device as claimed in claim 9, wherein said depth of said first collector region ranges from 20 nm to 60 nm.

Claim 16

The device as claimed in claim 9, wherein said first, second and third gradients are substantially constant.

Claim 17

The device as claimed in claim 9, wherein said base region is p-type, and said emitter region and said first and second collector regions are n-type.

Claim 18

The device as claimed in claim 9, further comprising an MOS field-effect transistor whose source/drain regions have a fourth distribution of Ge concentration graded as a function of depth of said source/drain regions, said fourth distribution being the same as said third distribution of said second collector region.