Semiconductor device

Abstract

Abstract PURPOSE:To manufacture a hetero-bipolar transistor with high yield by forming a base region composed of an SiGe layer shaped into a specified region on one surface of an Si substrate and a lower base connected to the underside of the peripheral section of the base region. CONSTITUTION:An n<+> buried layer 12 as a collector contact and an n-type Si layer 13 as a collector are shaped in a specified region demarcated by an isolation insulating layer 11. An external base 14 into which a p-type impurity is introduced through a thermal diffusion or ion implantation is formed in the predetermined region of the Si layer 13. A p-type SiGe layer 15 as a base is shaped onto the Si layer 13 so that its a peripheral section is superposed on the external base 14, and an n-type Si layer 16 As an emitter is formed onto the SiGe layer 15. An inter-layer insulating layer 17 is shaped onto the whole surface on an Si substrate 10, and metallic electrodes 18 connected to the Si layer 13, the external base 14, and the Si layer 16 are formed separately from openings bored at the specified locations of the inter-layer insulating layer 17, thus constituting a hetero-bipolar transistor.

Inventors

• 👤 Hiroshi Fujioka
• 👤 洋 藤岡

Bibliographic Details