Patent US5440130A successfully refreshed from Google Patents.
US5440130A
Expired / Lapsed
US
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X-ray imaging system and solid state detector therefor
Assignee: General Imaging Corp
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Filing: 1993-06-14
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Granted: 1995-08-08
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Expires: 2013-06-14
Abstract
Abstract The x-ray imaging system comprises an x-ray source for producing an x-ray beam having an energy of at least 30 kVp and an x-ray detector. The x-ray detector comprises a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices. The detector is responsive to x-rays of at least 30 keV to directly produce free electrons which interact with the charge storage devices.
Inventors
- 👤 John D. Cox
- 👤 William R. Eisenstadt
- 👤 Robert M. Fox
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 05:31
CPC Classifications
G; G01; G01T; G01T1/00; G01T1/16; G01T1/20; G01T1/2006; G01T1/29; G01T1/2914; G01T1/2921; G01T1/2928; H; H04; H04N; H04N23/00; H04N23/30; H04N25/00; H04N25/50; H04N25/53; H04N25/533; H04N25/70; H04N25/76; H04N25/77; H04N25/778; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/189; H10F39/1898; H10F39/80; H10F39/803; H10F39/804; H04N25/30
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
95 words
An x-ray imaging system comprising: an x-ray source for producing an x-ray spectrum of at least 30 kVp; an x-ray detector comprising a solid state device having a plurality of contiguous solid state layers, one of said contiguous solid state layers including a semiconductor material with a plurality of charge storage devices forming pixels, each of said pixels being at least about 50 microns on a side to increase sensitivity of said detector to x-ray radiation of at least 30 keV, said x-ray radiation directly producing free electrons which interact with said charge storage devices.
Claim 2
Dependent Claim
95 words
An x-ray imaging system comprising: an x-ray source for producing an x-ray spectrum of at least 30 kVp; an x-ray detector comprising a solid state device having a plurality of contiguous solid state layers, one of said contiguous solid state layers including a semiconductor material with a plurality of charge storage devices forming pixels, each of said pixels being at least about 50 microns on a side to increase sensitivity of said detector to x-ray radiation of at least 30 keV, said x-ray radiation directly producing free electrons which interact with said charge storage devices.
Claim 3
Dependent Claim
20 words
An x-ray imaging system as set forth in claim 1 wherein said detector responds to x-rays up to 200 kVp.
Claim 4
Dependent Claim
99 words
An x-ray imaging system comprising: an x-ray source for producing an x-ray spectrum of at least 30 kVp; an x-ray detector comprising a solid state device having a plurality of contiguous solid state layers, one of said contiguous solid state layers including a semiconductor material with a plurality of charge storage devices, said detector having an extra absorber to increase sensitivity of said detector to x-ray radiation of at least 30 keV, said x-ray radiation directly producing free electrons which interact with said charge storage devices; and means for displaying an image formed in response the charge storage devices.
Claim 5
Dependent Claim
99 words
An x-ray imaging system comprising: an x-ray source for producing an x-ray spectrum of at least 30 kVp; an x-ray detector comprising a solid state device having a plurality of contiguous solid state layers, one of said contiguous solid state layers including a semiconductor material with a plurality of charge storage devices, said detector having an extra absorber to increase sensitivity of said detector to x-ray radiation of at least 30 keV, said x-ray radiation directly producing free electrons which interact with said charge storage devices; and means for displaying an image formed in response the charge storage devices.
Claim 6
Dependent Claim
102 words
An x-ray imaging system comprising: an x-ray source for producing an x-ray spectrum of at least 30 kVp; an x-ray detector comprising a solid state device having a plurality of contiguous solid state layers, one of said contiguous solid state layers including a semiconductor material with a plurality of charge storage devices, said charge storage devices being arranged in groups to form pixels such that each pixel is formed of a plurality of charge storage devices, said detector being responsive to x-ray radiation of at least 30 keV, said x-ray radiation directly producing free electrons which interact with said charge storage devices.
Claim 7
Dependent Claim
102 words
An x-ray imaging system comprising: an x-ray source for producing an x-ray spectrum of at least 30 kVp; an x-ray detector comprising a solid state device having a plurality of contiguous solid state layers, one of said contiguous solid state layers including a semiconductor material with a plurality of charge storage devices, said charge storage devices being arranged in groups to form pixels such that each pixel is formed of a plurality of charge storage devices, said detector being responsive to x-ray radiation of at least 30 keV, said x-ray radiation directly producing free electrons which interact with said charge storage devices.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-08-07 | 1999-02-06 | 1999-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-07 | 2003-02-06 | 2003-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-08-07 | 2007-02-06 | 2007-08-08 | $7700.00 | Window Closed / Lapsed |