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US5438952A
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Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor layer
Assignee: Fujitsu Ltd
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Filing: 1994-01-31
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Granted: 1995-08-08
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Expires: 2014-01-31
Abstract
Abstract A method of fabricating a compound semiconductor device includes the steps of supplying an amine-adduct of a compound that contains a constituent element of a crystal layer that forms the semiconductor device, to a substrate on which the semiconductor device is formed, as a source material of the crystal layer, decomposing the amine-adduct in the vicinity of the substrate such that the constituent element is released, and depositing the constituent element on the substrate to cause a growth of the crystal layer on the substrate.
Inventors
- 👤 Nobuyuki Otsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:18
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
242 words
A method for fabricating a semiconductor device that includes a crystal layer of a compound semiconductor material, said crystal layer containing a plurality of constituent elements, comprising the steps of: (a) supplying an amine-adduct of a first compound that contains a first constituent element of said crystal layer, to a substrate on which said semiconductor device is to be formed, as a first source material of said crystal layer; (b) decomposing said amine-adduct in the vicinity of said substrate such that said first constituent element of said crystal layer is released from said amine-adduct; (c) depositing said first constituent element of said crystal layer, released by said step (b) of decomposing, on said substrate to cause a growth of said crystal layer on said substrate; (d) supplying a second compound that contains a second constituent element of said crystal layer, to said substrate as a second source material of said crystal layer; (e) decomposing said second compound in the vicinity of said substrate such that said second constituent element of said crystal layer is released from said second compound; (f) depositing said second constituent element of said crystal layer, released by said step (e), on said substrate to cause a growth of said crystal layer on said substrate; said steps (a) through (c) forming a first process, said steps (d) through (f) forming a second process, wherein said first and second process are carried out repeatedly and alternately with intervening flushing steps.
Claim 2
Independent Claim
242 words
A method for fabricating a semiconductor device that includes a crystal layer of a compound semiconductor material, said crystal layer containing a plurality of constituent elements, comprising the steps of: (a) supplying an amine-adduct of a first compound that contains a first constituent element of said crystal layer, to a substrate on which said semiconductor device is to be formed, as a first source material of said crystal layer; (b) decomposing said amine-adduct in the vicinity of said substrate such that said first constituent element of said crystal layer is released from said amine-adduct; (c) depositing said first constituent element of said crystal layer, released by said step (b) of decomposing, on said substrate to cause a growth of said crystal layer on said substrate; (d) supplying a second compound that contains a second constituent element of said crystal layer, to said substrate as a second source material of said crystal layer; (e) decomposing said second compound in the vicinity of said substrate such that said second constituent element of said crystal layer is released from said second compound; (f) depositing said second constituent element of said crystal layer, released by said step (e), on said substrate to cause a growth of said crystal layer on said substrate; said steps (a) through (c) forming a first process, said steps (d) through (f) forming a second process, wherein said first and second process are carried out repeatedly and alternately with intervening flushing steps.
Claim 3
Dependent Claim
151 words
A method as claimed in claim 1, wherein said method further comprises the steps of: (g) supplying a third compound that contains a third constituent element of said crystal layer, to said substrate as a third source material of said crystal layer; (h) decomposing said third compound in the vicinity of said substrate such that said third constituent element of said crystal layer is released from said third compound; (i) depositing said third constituent element of said crystal layer, released by said step (h), on said substrate to cause a growth of said crystal layer on said substrate; said steps (g) through (i) forming a third process, wherein said first process, said second process and said third process are carried out sequentially and repeatedly, with flushing steps interposed between said step (c) and said step (d), said step (f) and said step (g), and said step (i) and said step (a).
Claim 4
Dependent Claim
29 words
A method as claimed in claim 2, wherein said first and third constituent element comprises a group III element and said second constituent element comprises a group V element.
Claim 5
Dependent Claim
24 words
A method as claimed in claim 2, wherein at least one of said second and third compounds is supplied in the form of amine-adduct.
Claim 6
Dependent Claim
43 words
A method as claimed in claim 1, wherein said step (c) for depositing said first constituent element on said substrate and said step (f) for depositing said second constituent element on said substrate are carried out at the same temperature of said substrate.
Claim 7
Dependent Claim
16 words
A method as claimed in claim 1, wherein said amine-adduct of said first compound comprises dimethylethylamine.
Claim 8
Dependent Claim
17 words
A method as claimed in claim 1, wherein said first constituent element comprises a group III element.
Claim 9
Dependent Claim
14 words
A method as claimed in claim 7, wherein said first constituent element comprises Ga.
Claim 10
Dependent Claim
14 words
A method as claimed in claim 7, wherein said first constituent element comprises In.
Claim 11
Dependent Claim
14 words
A method as claimed in claim 7, wherein said first constituent element comprises Al.
Claim 12
Dependent Claim
28 words
A method as claimed in claim 1, wherein said first source material is an amine-adduct of the compound selected from a group consisting of triethylgallium, trimethylindium, and alane.
Claim 13
Dependent Claim
102 words
A method as claimed in claim 1, wherein said first constituent element comprises a group II element, and said first source material is an amine-adduct of the compound selected from a group consisting of (CH 3 ) 2 Hg, (CH 3 ) 2 Cd, (CH 3 ) 2 Zn, (CH 3 ) 2 Be, (C 3 H 7 ) 2 Be, (CH 3 ) 2 Mg, (C 2 H 5 ) 2 Hg, (C 2 H 5 ) 2 Cd, (C 2 H 5 ) 2 Zn, (C 2 H 5 ) 2 Be, and (C 4 H 9 ) 2 Be.
Claim 14
Dependent Claim
71 words
A method as claimed in claim 1, wherein said first constituent element comprises a group III element, and said first source material is an amine-adduct of the compound selected from a group consisting of (CH 3 ) 3 Al, (CH 3 ) 3 Ga, (CH 3 ) 3 In, (C 2 H 5 ) 2 Al, (C 2 H 5 ) 2 Ga, and (C 2 H 5 ) 2 In.
Claim 15
Dependent Claim
97 words
A method as claimed in claim 1, wherein said first constituent element comprises a group IV element, and said first source material is an amine-adduct of the compound selected from a group consisting of (CH 3 ) 4 Si, (CH 3 ) 4 Ge, (CH 3 ) 4 Pb, (CH 3 ) 4 Sn, (C 3 H 7 ) 4 Sn, (C 2 H 5 ) 4 Si, (C 2 H 5 ) 4 Ge, (C 2 H 5 ) 4 Pb, (C 2 H 5 ) 4 Sn, and (C 4 H 9 ) 4 Sn.
Claim 16
Dependent Claim
124 words
A method as claimed in claim 1, wherein said first constituent element comprises a group V element, and said first source material is an amine-adduct of the compound selected from a group consisting of (CH 3 ) 3 As, (CH 3 ) 3 P, (CH 3 ) 3 Sb, (C 2 H 5 ) 3 As, (C 2 H 5 ) 3 P, (C 2 H 5 ) 3 Sb, (C 2 H 5 ) 3 AsH 2 , (C 2 H 5 ) 3 PH 2 , (C 3 H 7 ) 3 Sb, (C 4 H 9 )AsH 2 , (C 4 H 9 )PH 2 , (C 4 H 9 )SbH 2 , and (C 4 H 9 )(CH 3 )Sb.
Claim 17
Dependent Claim
59 words
A method as claimed in claim 1, wherein said first constituent element comprises a group VI element, and said first source material is an amine-adduct of the compound selected from a group consisting of (CH 3 ) 2 Se, (CH 3 ) 2 Te, (C 2 H 5 ) 2 Se and (C 2 H 5 ) 2 Te.
Claim 18
Independent Claim
111 words
A method for fabricating a semiconductor device that includes a crystal layer of a compound semiconductor material, comprising the steps of: (a) supplying an amine-adduct of an alkyl compound that contains a constituent element of said crystal layer, to a substrate on which said semiconductor device is formed, as a source material of said crystal layer; (b) decomposing said amine-adduct in the vicinity of said substrate such that said constituent element of said crystal layer is released from said amine-adduct; and (c) depositing said constituent element of said crystal layer, released by said step (b) of decomposing, on said substrate to cause a growth of said crystal layer on said substrate.
Claim 19
Independent Claim
111 words
A method for fabricating a semiconductor device that includes a crystal layer of a compound semiconductor material, comprising the steps of: (a) supplying an amine-adduct of an alkyl compound that contains a constituent element of said crystal layer, to a substrate on which said semiconductor device is formed, as a source material of said crystal layer; (b) decomposing said amine-adduct in the vicinity of said substrate such that said constituent element of said crystal layer is released from said amine-adduct; and (c) depositing said constituent element of said crystal layer, released by said step (b) of decomposing, on said substrate to cause a growth of said crystal layer on said substrate.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-08-07 | 1999-02-06 | 1999-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-08-07 | 2003-02-06 | 2003-08-08 | $3760.00 | Window Closed / Lapsed |
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