Data output buffer of semiconductor memory device for preventing noises

Claim 2

A data output buffer, comprising: a data output driver including pull-up means operable in response to a first signal and pull-down means operable in response to a second signal; control means for detecting a current flowing into said pull-down means and for controlling the slope of the second signal in accordance with the detected current; wherein said control means includes an inverter and sensing means for sensing the current flowing into said pull-down means and the magnitude of noises generated at the ground of said pull-down means; and voltage adjusting means operable in accordance with an output signal of said sensing means for adjusting a gate voltage of said pull-down means; wherein said sensing means includes (a) an N-MOS transistor which has a gate electrode for receiving an output signal of the inverter, a drain electrode connected to an output of said data output driver, and a source electrode, and (b) a current sensing resistor connected in between said source electrode and the ground.

Claim 3

A data output buffer, comprising: a data output driver including pull-up means operable in response to a first signal and pull-down means operable in response to a second signal; control means for detecting a current flowing into said pull-down means and for controlling the slope of the second signal in accordance with the detected current; wherein said control means includes an inverter and sensing means for sensing the current flowing into said pull-down means and the magnitude of noises generated at the ground of said pull-down means; and voltage adjusting means operable in accordance with an output signal of said sensing means for adjusting a gate voltage of said pull-down means; wherein said voltage adjusting means includes (a) a P-MOS transistor which has a gate electrode connected to a second ground, a source electrode connected to a voltage source and a drain electrode connected to an inverter, and (b) an N-MOS transistor which has a gate electrode connected to said sensing means, a source electrode connected to a first ground, and a drain electrode connected to said drain electrode of said P-MOS transistor.

Claim 4

A data output buffer, comprising: a data output driver including pull-up means operable in response to a first signal and pull-down means operable in response to a second signal; control means for detecting a current flowing into said pull-down means and for controlling the slope of the second signal in accordance with the detected current; wherein said control means includes an inverter and sensing means for sensing the current flowing into said pull-down means and the magnitude of noises generated at the ground of said pull-down means; and voltage adjusting means operable in accordance with an output signal of said sensing means for adjusting a gate voltage of said pull-down means; wherein said voltage adjusting means includes (a) a P-MOS transistor which has a gate electrode connected to a second ground, a source electrode connected to a voltage source and a drain electrode connected to an inverter, and (b) an N-MOS transistor which has a gate electrode connected to said sensing means, a source electrode connected to a first ground, and a drain electrode connected to said drain electrode of said P-MOS transistor.

Claim 5

A data output buffer, comprising: data buffer means for buffering data signals; inversion data buffer means for buffering inversion data signals; a data output driver which includes a pull-up means operable in response to an output signal of said data buffer means and a pull-down means operable in response to an output signal of said inversion data buffer means; control means for sensing a current flowing into said pull-down means via a feed-back and controlling the output signal of said inversion data buffer means; wherein said control means includes sensing means for sensing a current flowing into said pull-down means upon driving data and the magnitude of noises generated at the ground of said pull-down means in accordance with the current; and voltage adjustment means operable in accordance with an output signal of said sensing means for adjusting the gate voltage of said pull-down means; wherein said sensing means includes an N-MOS transistor having a drain electrode connected to an output of said data output driver, a gate electrode for receiving an output signal of an inverter; and a current sensing resister connected in series between a source electrode of said N-MOS transistor and the ground.

Claim 6

A data output buffer, comprising: data buffer means for buffering data signals; inversion data buffer means for buffering inversion data signals; a data output driver which includes a pull-up means operable in response to an output signal of said data buffer means and a pull-down means operable in response to an output signal of said inversion data buffer means; control means for sensing a current flowing into said pull-down means via a feed-back and controlling the output signal of said inversion data buffer means; wherein said control means includes sensing means for sensing a current flowing into said pull-down means upon driving data and the magnitude of noises generated at the ground of said pull-down means in accordance with the current; and voltage adjustment means operable in accordance with an output signal of said sensing means for adjusting the gate voltage of said pull-down means; wherein said sensing means includes an N-MOS transistor having a drain electrode connected to an output of said data output driver, a gate electrode for receiving an output signal of an inverter; and a current sensing resister connected in series between a source electrode of said N-MOS transistor and the ground.

Claim 7

A data output buffer, comprising: data buffer means for buffering data signals; inversion data buffer means for buffering inversion data signals; a data output driver which includes a pull-up means operable in response to an output signal of said data buffer means and a pull-down means operable in response to an output signal of said inversion data buffer means; control means for sensing a current flowing into said pull-down means via a feed-back and controlling the output signal of said inversion data buffer means; wherein said control means includes sensing means for sensing a current flowing into said pull-down means upon driving data and the magnitude of noises generated at a first ground and a second ground in accordance with the current; and voltage adjusting means operable in accordance with an output signal of said sensing means for adjusting the gate voltage of said pull-down means; wherein said voltage adjusting means includes (a) a P-MOS transistor having a gate electrode connected to the second ground, a source electrode connected to a voltage source and a drain electrode connected to an inverter, and (b) an N-MOS transistor having a gate electrode connected to said sensing means, a source electrode connected to the first ground and a drain electrode connected to said drain electrode of said P-MOS transistor.

Claim 8

A data output buffer, comprising: data buffer means for buffering data signals; inversion data buffer means for buffering inversion data signals; a data output driver which includes a pull-up means operable in response to an output signal of said data buffer means and a pull-down means operable in response to an output signal of said inversion data buffer means; control means for sensing a current flowing into said pull-down means via a feed-back and controlling the output signal of said inversion data buffer means; wherein said control means includes sensing means for sensing a current flowing into said pull-down means upon driving data and the magnitude of noises generated at a first ground and a second ground in accordance with the current; and voltage adjusting means operable in accordance with an output signal of said sensing means for adjusting the gate voltage of said pull-down means; wherein said voltage adjusting means includes (a) a P-MOS transistor having a gate electrode connected to the second ground, a source electrode connected to a voltage source and a drain electrode connected to an inverter, and (b) an N-MOS transistor having a gate electrode connected to said sensing means, a source electrode connected to the first ground and a drain electrode connected to said drain electrode of said P-MOS transistor.