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US5438037A
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Method for depositing another thin film on an oxide thin film having perovskite crystal structure
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1994-04-14
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Granted: 1995-08-01
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Expires: 2014-04-14
Abstract
Abstract A method for depositing a thin film of a material on an oxide thin film having a perovskite type crystal structure formed on a substrate comprising steps of depositing a seed layer of a single crystal of the material having an extremely thin thickness at a relatively high substrate temperature on the oxide thin film having a perovskite type crystal structure and depositing a thin film of the material on the seed layer at a lower substrate temperature.
Inventors
- 👤 So Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:48
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0716; H10N60/0912; H10N60/0941; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
112 words
A method for depositing a thin film of a material on an oxide thin film that has a perovskite crystal structure formed on a substrate comprising steps of depositing a single crystal seed layer of the material on the oxide thin film that has the perovskite crystal structure at a first temperature, and depositing a thin film of the material on the seed layer at a second substrate temperature lower than the first substrate temperature, wherein the second temperature is selected so that there is an interface between the thin film and the oxide thin film that has said perovskite crystal structure as the result of little mutual diffusion at the interface.
Claim 2
Independent Claim
112 words
A method for depositing a thin film of a material on an oxide thin film that has a perovskite crystal structure formed on a substrate comprising steps of depositing a single crystal seed layer of the material on the oxide thin film that has the perovskite crystal structure at a first temperature, and depositing a thin film of the material on the seed layer at a second substrate temperature lower than the first substrate temperature, wherein the second temperature is selected so that there is an interface between the thin film and the oxide thin film that has said perovskite crystal structure as the result of little mutual diffusion at the interface.
Claim 3
Dependent Claim
43 words
A method as claimed in claim 1, wherein the second substrate temperature under which the thin film of the material is deposited on the seed layer is selected so that the oxide thin film is further oxidized so as to improve its properties.
Claim 4
Dependent Claim
22 words
A method as claimed in claim 1, wherein the oxide thin film is formed of high-T c (high critical temperature) oxide superconductor.
Claim 5
Dependent Claim
43 words
A method as claimed in claim 3, wherein the oxide thin film is formed of oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O compound oxide superconductor material, a Bi-Sr-Ca-Cu-O compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O compound oxide superconductor material.
Claim 6
Dependent Claim
24 words
A method as claimed in claim 1, wherein the oxide thin film is formed of Pr 1 Ba 2 Cu 3 O 7-x .
Claim 7
Dependent Claim
14 words
A method as claimed in claim 1, wherein the material is an insulator material.
Claim 8
Dependent Claim
23 words
A method as claimed in claim 6, wherein the insulator is selected the group consisting of SrTiO 3 , MgO and silicon nitride.
Claim 9
Dependent Claim
14 words
A method claimed in claim 1 wherein the substrate is formed of an insulator.
Claim 10
Dependent Claim
35 words
A method claimed in claim 8 wherein the substrate is formed of a material selected from the group consisting of a MgO (100) substrate, a SrTiO 3 (100) substrate and a CdNdAlO 4 (001) substrate.
Claim 11
Dependent Claim
22 words
A method as claimed in claim 3, wherein the oxide thin film is formed of a high-T c copper-oxide compound oxide superconductor.
Claim 12
Dependent Claim
18 words
A method as claimed in claim 1, wherein the seed layer is from 2 to 10 nanometers thick.
Claim 13
Dependent Claim
17 words
A method as claimed in claim 1, wherein the first temperature is between 500° and 800° C.
Claim 14
Dependent Claim
17 words
A method as claimed in claim 1, wherein the second temperature is between 300° and 500° C.
Claim 15
Dependent Claim
17 words
A method as claimed in claim 12, wherein the second temperature is between 300° and 500° C.
Claim 16
Dependent Claim
18 words
A method as claimed in claim 14, wherein the seed layer is from 2 to 10 nanometers thick.
Claim 17
Dependent Claim
16 words
A method as claimed in claim 1, wherein mutual diffusion occurs only in the seed layer.
Claim 18
Dependent Claim
16 words
A method as claimed in claim 11, wherein mutual diffusion occurs only in the seed layer.
Claim 19
Dependent Claim
43 words
A method as claimed in claim 10, wherein the oxide thin film is formed of oxide superconductor material selected from the group consisting of a Y-Ba-Cu-O compound oxide superconductor material, a Bi-Sr-Ca-Cu-O compound oxide superconductor material, and a Tl-Ba-Ca-Cu-O compound oxide superconductor material.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-07-31 | 1999-01-30 | 1999-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-31 | 2003-01-30 | 2003-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-31 | 2007-01-30 | 2007-08-01 | $7700.00 | Window Closed / Lapsed |