EP0459906A2
Expired / Lapsed
EP
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Process for preparing superconducting junction of oxide superconductor
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-05-30
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Granted: —
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Expires: 2011-05-30
Abstract
Abstract Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the ivention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400°C during the non-superconducting intermediate thin film layer is deposited.
Inventors
- 👤 Saburo C/O Itami Works Tanaka
- 👤 Hidenori C/O Itami Works Nakanishi
- 👤 Hideo C/O Itami Works Itozaki
- 👤 Takashi C/O Itami Works Matsuura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:45
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912; H10N60/0941; H10N60/10; H10N60/12; H10N60/124
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
72 words
A process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order, characterized in that said non-superconducting intermediate thin film layer is composed of MgO and in that said substrate is heated at a temperature between 200 and 400°C during said non-superconducting intermediate thin film layer is deposited.
Claim 2
Dependent Claim
23 words
The process set forth in Claim 1 wherein a thickness of said non-superconducting intermediate thin film layer is between 1 and 10 nm.
Claim 3
Dependent Claim
35 words
The process set forth in Claim 1 or 2 wherein all of said first and second oxide superconductor thin film layers and said non-superconducting intermediate thin film layer are prepared by physical vapour deposition method.
Claim 4
Dependent Claim
28 words
The process set forth in Claim 3 wherein both of said non-superconducting intermediate layer and said second oxide superconductor thin film layer are prepared by vacuum deposition method.
Claim 5
Dependent Claim
28 words
The process set forth in any one of Claim 1 to 4 wherein said first thin film layers is a-axis oriented thin film or c-axis oriented thin film.
Claim 6
Dependent Claim
39 words
The process set forth in any one of Claim 1 to 5 wherein first and second oxide superconductor thin film layers are made of a compound oxide selected from the group comprising Y-Ba-Cu-O system, Bi-Sr-Ca-Cu-O system and Tl-Ba-Ca-Cu-O system.
Claim 7
Dependent Claim
22 words
The process set forth in any one of Claim 1 to 5 wherein said substrate is a single crystal substrate of oxide.
Claim 8
Dependent Claim
31 words
The process set forth in Claim 7 wherein said substrate is a single crystal substrate of oxide selected from the group comprising MgO, SrTiO₃, LaAlO₃, LaGaO₃ and yttrium stabilized zirconia (YSZ).
Claim 9
Dependent Claim
28 words
The process set forth in Claim 8 wherein said first oxide superconductor thin film layer is deposited on a (100) plane of a single crystal substrate of MgO.
Claim 10
Dependent Claim
44 words
The process set forth in any one of Claim 1 to 9 wherein, before said non-superconducting intermediate layer is deposited, said substrate on which said first oxide superconductor thin film layer has been deposited previously is heated at a temperature between 600 and 650°C.
Claim 11
Dependent Claim
16 words
The process set forth in Claim 10 wherein said substrate is heated in oxygen containing atmosphere.
Claim 12
Dependent Claim
70 words
A process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order, characterized in that, before said non-superconducting intermediate layer is deposited, said substrate on which said first oxide superconductor thin film layer has been deposited previously is heated at a temperature between 600 and 650°C.
Claim 13
Dependent Claim
16 words
The process set forth in Claim 12 wherein said substrate is heated in oxygen containing atmosphere.
Claim 14
Dependent Claim
20 words
The process set forth in Claim 12 or 13 wherein said non-superconducting intermediate thin film layer is composed of SrTiO₃.
Claim 15
Dependent Claim
23 words
The process set forth in Claim 14 wherein an thickness of said non-superconducting intermediate thin film layer is between 1 and 10 nm.
Claim 16
Dependent Claim
30 words
The process set forth in Claim 14 or 15 wherein both of said non-superconducting intermediate layer and said second oxide superconductor thin film layer are prepared by vacuum deposition method.
Claim 17
Dependent Claim
28 words
The process set forth in any one of Claim 14 to 16 wherein said first thin film layers is a-axis oriented thin film or c-axis oriented thin film.
Claim 18
Dependent Claim
39 words
The process set forth in any one of Claim 14 to 17 wherein first and second oxide superconductor thin film layers are made of a compound oxide selected from the group comprising Y-Ba-Cu-O system, Bi-Sr-Ca-Cu-O system and Tl-Ba-Ca-Cu-O system.
Claim 19
Dependent Claim
36 words
The process set forth in any one of Claim 14 to 18 wherein said substrate is a single crystal substrate of oxide selected from the group comprising MgO, SrTiO₃, LaAlO₃, LaGaO₃ and yttrium stabilized zirconia (YSZ).
Claim 20
Dependent Claim
28 words
The process set forth in Claim 19 wherein said first oxide superconductor thin film layer is deposited on a (100) plane of a single crystal substrate of MgO.
References Cited (Backward Citations)
No citation records indexed.
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