Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
219 words
An output driver formed on a single integrated circuit die, comprising: a drive control circuit which generates first and second control signals responsive to at least one digital input signal; a first output field effect transistor having a source, a drain, and a gate, said gate being coupled to said first control signal, said source being coupled to a data output terminal, said source and said drain of said first output field effect transistor being disposed in a first semiconductor bulk region; and a second output field effect transistor having a source, a drain, and a gate, said gate of said second output field effect transistor being coupled to said second control signal, said drain of said second output field effect transistor being coupled to said source of said first output field effect transistor, said source and said drain of said second output field effect transistor being disposed in a second semiconductor bulk region, said source and said drain of said second output field effect transistor having an identical semiconductor conductivity type as a semiconductor conductivity type of said source and said drain of said first output field effect transistor; and a bulk potential control circuit which changes a voltage on said first semiconductor bulk region at least partly in response to said at least one digital input signal.
Claim 2
Dependent Claim
219 words
An output driver formed on a single integrated circuit die, comprising: a drive control circuit which generates first and second control signals responsive to at least one digital input signal; a first output field effect transistor having a source, a drain, and a gate, said gate being coupled to said first control signal, said source being coupled to a data output terminal, said source and said drain of said first output field effect transistor being disposed in a first semiconductor bulk region; and a second output field effect transistor having a source, a drain, and a gate, said gate of said second output field effect transistor being coupled to said second control signal, said drain of said second output field effect transistor being coupled to said source of said first output field effect transistor, said source and said drain of said second output field effect transistor being disposed in a second semiconductor bulk region, said source and said drain of said second output field effect transistor having an identical semiconductor conductivity type as a semiconductor conductivity type of said source and said drain of said first output field effect transistor; and a bulk potential control circuit which changes a voltage on said first semiconductor bulk region at least partly in response to said at least one digital input signal.
Claim 3
Dependent Claim
44 words
The output driver of claim 1, wherein said drive control circuit charges said gate of said second output field effect transistor at a first rapid rate and then subsequently charges said gate of said second output field effect transistor at a second slower rate.
Claim 4
Dependent Claim
85 words
The output driver of claim 1, wherein said bulk potential control circuit comprises a first transistor having a source, a drain, and a gate, said drain of said first transistor of said bulk potential control circuit being coupled to said source of said first output transistor, said source of said first transistor of said bulk potential control circuit being coupled to said first semiconductor bulk region, said gate of said first transistor of said bulk potential control circuit being coupled to said drive control circuit.
Claim 5
Dependent Claim
90 words
The output driver of claim 3, wherein said bulk potential control circuit further comprises a second transistor having a source, a drain, and a gate, said drain of said second transistor of said bulk potential control circuit being coupled to said source of said first transistor of said bulk potential control circuit, said source of said second transistor of said bulk potential control circuit being coupled to a voltage supply line, said gate of said second transistor of said bulk potential control circuit being coupled to said drive control circuit.
Claim 6
Dependent Claim
90 words
The output driver of claim 4, wherein said bulk potential control circuit further comprises a third transistor having a source, a drain, and a gate, said drain of said third transistor of said bulk potential control circuit being coupled to said source of said first transistor of said bulk potential control circuit, said source of said third transistor of said bulk potential control circuit being coupled to said voltage supply line, said gate of said third transistor of said bulk potential control circuit being coupled to said drive control circuit.
Claim 7
Dependent Claim
27 words
The output driver of claim 3, wherein said first transistor of said bulk potential control circuit is conductive when said output driver is both powered and enabled.
Claim 8
Dependent Claim
81 words
The output driver of claim 3, wherein said first transistor of said bulk potential control circuit turns on before said second output transistor turns on, said second output transistor turning on to pull an output voltage on said data output terminal from a high digital logic level voltage to a low digital logic level voltage, both said first transistor of said bulk potential control circuit and said second output transistor turning on in response to a digital output enable input signal.
Claim 9
Dependent Claim
45 words
The output driver of claim 4, wherein said second transistor of said bulk potential control circuit is conductive when said at least one digital input signal has a low digital logic level voltage during a time when said output driver is both powered and enabled.
Claim 10
Dependent Claim
46 words
The output driver of claim 4, wherein said second transistor of said bulk potential control circuit turns on before one of said first and second output transistors turns off, said one of said first and second output transistors turning off to disable said data output terminal.
Claim 11
Dependent Claim
29 words
The output driver of claim 3, wherein said source and said drain of first transistor of said bulk potential control circuit are disposed in said first semiconductor bulk region.
Claim 12
Dependent Claim
48 words
The output driver of claim 7, wherein said first transistor of said bulk potential control circuit is sized to discharge a capacitance of said first semiconductor bulk region before said second output transistor turns on during a high-to-low transition of said output voltage on said data output terminal.
Claim 13
Dependent Claim
51 words
The output driver of claim 1, further comprising: a first resistive element coupled between said drain of said first output field effect transistor and a first voltage supply line; and a second resistive element coupled between said source of said second output field effect transistor and a second voltage supply line.
Claim 14
Dependent Claim
211 words
An output driver formed on a single integrated circuit die, comprising: means for generating first and second control signals responsive to at least one digital input signal; a first output field effect transistor having a source, a drain, and a gate, said gate being coupled to said first control signal, said source being coupled to a data output terminal, said source and said drain of said first output field effect transistor being disposed in a first semiconductor bulk region; a second output field effect transistor having a source, a drain, and a gate, said gate of said second output field effect transistor being coupled to said second control signal, said drain of said second output field effect transistor being coupled to said source of said first output field effect transistor, said source and said drain of said second output field effect transistor being disposed in a second semiconductor bulk region, said source and said drain of said second output field effect transistor having an identical semiconductor conductivity type as a semiconductor conductivity type of said source and said drain of said first output field effect transistor; and means for changing a voltage on said first semiconductor bulk region at least partly in response to said at least one digital input signal.
Claim 15
Dependent Claim
211 words
An output driver formed on a single integrated circuit die, comprising: means for generating first and second control signals responsive to at least one digital input signal; a first output field effect transistor having a source, a drain, and a gate, said gate being coupled to said first control signal, said source being coupled to a data output terminal, said source and said drain of said first output field effect transistor being disposed in a first semiconductor bulk region; a second output field effect transistor having a source, a drain, and a gate, said gate of said second output field effect transistor being coupled to said second control signal, said drain of said second output field effect transistor being coupled to said source of said first output field effect transistor, said source and said drain of said second output field effect transistor being disposed in a second semiconductor bulk region, said source and said drain of said second output field effect transistor having an identical semiconductor conductivity type as a semiconductor conductivity type of said source and said drain of said first output field effect transistor; and means for changing a voltage on said first semiconductor bulk region at least partly in response to said at least one digital input signal.
Claim 16
Dependent Claim
51 words
The output driver of claim 13, further comprising: a first resistive element coupled between said drain of said first output field effect transistor and a first voltage supply line; and a second resistive element coupled between said source of said second output field effect transistor and a second voltage supply line.