US5430258A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Copper interconnection structure and method of preparing same
Assignee: Sony Corp
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Filing: 1994-03-11
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Granted: 1995-07-04
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Expires: 2014-03-11
Abstract
Abstract A method of preparing a Cu interconnection structure includes the following steps in the sequence: (a) depositing a Cu layer on a substrate layer; (b) depositing an Al layer on said Cu layer; (c) heating said Al layer and said Cu layer at a temperature ranging from 300° C. to 550° C. so as to transform said Al layer into a layer of alloy consisting of Al and Cu; and (d) depositing an insulating layer containing SiO 2 on the alloy layer. Oxidation of Cu is suppressed by the formation of Al 2 O 3 on the outer surface of the alloy layer. Therefore, increase of electrical resistance of the Cu interconnection structure is substantially suppressed.
Inventors
- 👤 Kazuhiro Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/071; H10W20/074; H10W20/077; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H05K3/00; H05K3/46; H05K3/4644; H05K3/4673; H05K3/4676
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
53 words
An electrical interconnection structure comprising: a substrate layer; a Cu layer being deposited on said substrate layer and having the shape of an interconnection pattern; and means for suppressing oxidation of the Cu layer, said means being an aluminum-copper alloy layer covering said Cu layer and having a thickness less than 1000 Å.
Claim 2
Dependent Claim
53 words
An electrical interconnection structure comprising: a substrate layer; a Cu layer being deposited on said substrate layer and having the shape of an interconnection pattern; and means for suppressing oxidation of the Cu layer, said means being an aluminum-copper alloy layer covering said Cu layer and having a thickness less than 1000 Å.
Claim 3
Dependent Claim
21 words
An electrical interconnection structure according to claim 1, wherein an insulating layer containing SiO 2 is deposited on said alloy layer.
Claim 4
Dependent Claim
16 words
An electrical interconnection structure according to claim 1, wherein said alloy layer comprises CuAl 2 .
Claim 5
Dependent Claim
21 words
An electrical interconnection structure according to claim 1, which includes a Al 2 O 3 layer on the aluminum-copper alloy layer.
Claim 6
Independent Claim
86 words
A device comprising: a substrate; an insulating layer on a surface of the substrate, said layer having at least one contact hole to expose a portion of the surface of the substrate; an interconnection layer formed on the insulating layer to contact the exposed portion of the substrate through the contact hole, said interconnection layer comprising a copper layer covered with an aluminum oxide layer converted from a copper aluminum alloy layer formed on the copper layer; and an oxygen-containing insulating layer covering the interconnection layer.
Claim 7
Independent Claim
86 words
A device comprising: a substrate; an insulating layer on a surface of the substrate, said layer having at least one contact hole to expose a portion of the surface of the substrate; an interconnection layer formed on the insulating layer to contact the exposed portion of the substrate through the contact hole, said interconnection layer comprising a copper layer covered with an aluminum oxide layer converted from a copper aluminum alloy layer formed on the copper layer; and an oxygen-containing insulating layer covering the interconnection layer.
Claim 8
Dependent Claim
28 words
A device according to claim 5, wherein said interconnection layer has a barrier layer under the copper layer to prevent a reaction between the substrate and copper layer.
Claim 9
Dependent Claim
26 words
A device according to claim 5, wherein said interconnection layer has a conductive layer under the copper layer to form an ohmic contact with the substrate.
Claim 10
Dependent Claim
22 words
A device according to claim 5, wherein said interconnection layer has an aluminum-copper alloy layer between the aluminum oxide and copper layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-07-03 | 1999-01-02 | 1999-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-03 | 2003-01-02 | 2003-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-03 | 2007-01-02 | 2007-07-04 | $7700.00 | Window Closed / Lapsed |