Patent US5429991A successfully refreshed from Google Patents.
US5429991A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming thin film for semiconductor device
Assignee: Mitsubishi Electric Corp
•
Filing: 1993-06-11
•
Granted: 1995-07-04
•
Expires: 2013-06-11
Abstract
Abstract A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.
Inventors
- 👤 Masanobu Iwasaki
- 👤 Hiromi Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:36
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/06; C23C16/08; C23C16/44; C23C16/54; H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
156 words
A method of forming a metal thin film for a semiconductor device by chemical vapor deposition on an intermediate layer provided on a substrate, said method, performed in a reaction vessel having first, second and third chambers, comprising the sequential steps of: activating a surface of said intermediate layer by introducing a halide gas of a metal for forming said thin film onto said surface of said intermediate layer in the first chamber; transferring said substrate having said intermediate layer to the second chamber and forming nuclei on said activated surface of said intermediate layer by introducing a silane-system gas onto said surface of said intermediate layer; and transferring said substrate with said intermediate layer formed with said nuclei to the third chamber and introducing said halide gas and a reducing gas onto said surface of said intermediate layer formed with said nuclei, thereby depositing said metal thin film on said surface of said intermediate layer.
Claim 2
Independent Claim
156 words
A method of forming a metal thin film for a semiconductor device by chemical vapor deposition on an intermediate layer provided on a substrate, said method, performed in a reaction vessel having first, second and third chambers, comprising the sequential steps of: activating a surface of said intermediate layer by introducing a halide gas of a metal for forming said thin film onto said surface of said intermediate layer in the first chamber; transferring said substrate having said intermediate layer to the second chamber and forming nuclei on said activated surface of said intermediate layer by introducing a silane-system gas onto said surface of said intermediate layer; and transferring said substrate with said intermediate layer formed with said nuclei to the third chamber and introducing said halide gas and a reducing gas onto said surface of said intermediate layer formed with said nuclei, thereby depositing said metal thin film on said surface of said intermediate layer.
Claim 3
Dependent Claim
32 words
A method in accordance with claim 1, wherein said metal thin film comprises a tungsten thin film, said halide gas comprises WF 6 , and said silane-system gas comprises SiH 4 .
Claim 4
Dependent Claim
15 words
A method in accordance with claim 2, wherein said intermediate layer comprises a TiN layer.
Claim 5
Dependent Claim
26 words
A method in accordance with claim 1, wherein said metal thin film deposition step comprises a step of using H 2 gas as said reducing gas.
Claim 6
Dependent Claim
26 words
A method in accordance with claim 1, wherein said metal thin film deposition step comprises a step of using SiH 4 gas as said reducing gas.
Claim 7
Dependent Claim
14 words
A method in accordance with claim 1, wherein said substrate is a semiconductor substrate.
Claim 8
Dependent Claim
19 words
A method in accordance with claim 1, wherein said substrate is an insulating film formed above a semiconductor substrate.
Claim 9
Independent Claim
121 words
A method of forming a metal thin film for a semiconductor device by chemical vapor deposition on an intermediate layer provided on a substrate, said method comprising the steps of: activating a surface of said intermediate layer by introducing a halide gas of a metal for forming said thin film while arranging a metal face of said metal close to said surface of said intermediate layer; forming nuclei on said activated surface of said intermediate layer by introducing a silane-system gas onto said surface of said intermediate layer; and introducing said halide gas and a reducing gas onto said surface of said intermediate layer formed with said nuclei, thereby depositing said metal thin film on said surface of said intermediate layer.
Claim 10
Independent Claim
121 words
A method of forming a metal thin film for a semiconductor device by chemical vapor deposition on an intermediate layer provided on a substrate, said method comprising the steps of: activating a surface of said intermediate layer by introducing a halide gas of a metal for forming said thin film while arranging a metal face of said metal close to said surface of said intermediate layer; forming nuclei on said activated surface of said intermediate layer by introducing a silane-system gas onto said surface of said intermediate layer; and introducing said halide gas and a reducing gas onto said surface of said intermediate layer formed with said nuclei, thereby depositing said metal thin film on said surface of said intermediate layer.
Claim 11
Dependent Claim
32 words
A method in accordance with claim 8, wherein said metal thin film comprises a tungsten thin film, said halide gas comprises WF 6 , and said silane-system gas comprises SiH 4 .
Claim 12
Dependent Claim
15 words
A method in accordance with claim 9, wherein said intermediate layer comprises a TiN layer.
Claim 13
Dependent Claim
26 words
A method in accordance with claim 8, wherein said metal thin film deposition step comprises a step of using H 2 gas as said reducing gas.
Claim 14
Dependent Claim
26 words
A method in accordance with claim 8, wherein said metal thin film deposition step comprises a step of using SiH 4 gas as said reducing gas.
Claim 15
Dependent Claim
14 words
A method in accordance with claim 8, wherein said substrate is a semiconductor substrate.
Claim 16
Dependent Claim
19 words
A method in accordance with claim 8, wherein said substrate is an insulating film formed above a semiconductor substrate.
References Cited (Backward Citations)
US3696779A
Cited
US4615298A
Cited
JPS5748226A
Cited
US4592306A
Cited
US4505949A
Cited
US4825808A
Cited
US4976996A
Cited
US4960732A
Cited
JPS63250463A
Cited
US4777061A
Cited
US4918033A
Cited
US4969415A
Cited
US4822753A
Cited
US5084417A
Cited
US5028565A
Cited
US5034348A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-03 | 1999-01-02 | 1999-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-03 | 2003-01-02 | 2003-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-03 | 2007-01-02 | 2007-07-04 | $7700.00 | Window Closed / Lapsed |