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US5428577A
Expired / Lapsed
US
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Semiconductor storage device having word-line voltage booster circuit with decoder and charger
Assignee: Fujitsu Ltd
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Filing: 1993-09-08
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Granted: 1995-06-27
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Expires: 2013-09-08
Abstract
Abstract A semiconductor storage device having a word-line voltage booster circuit includes: a plurality of word-lines connected to each memory cell array; a drive signal generation circuit for producing a word-line drive signal having a voltage higher than a power supply voltage; a decoder circuit for transmitting the word-line drive signal produced by the drive signal generation circuit, when the drive signal generation circuit is selected by an address signal; and a charging circuit connected to a signal path which transmits the word-line drive signal from the drive signal generation circuit to the decoder circuit. The charging circuit charges the signal path before the word-line drive signal is output to the signal path.
Inventors
- 👤 Fuminori Yumitori
- 👤 Yasuhiro Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 10:33
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/12; G11C8/08
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
141 words
A semiconductor storage device having a word-line booster circuit comprising: a plurality of word-lines connected to each memory cell array; a drive signal generation means, operably coupled to said plurality of word-lines, for producing a word-line drive signal having a voltage higher than a power supply voltage; a decoder means, operably coupled to said drive signal generation means, for transmitting said word-line drive signal produced by said drive signal generation means, when said drive signal generation means is selected by an address signal; and a charging means, operably coupled to said drive signal generation means and to said decoder means, and connected to a signal path which transmits said word-line drive signal from said drive signal generation means to said decoder means, wherein said charging means charges said signal path before said word-line drive signal is output to said signal path.
Claim 2
Dependent Claim
141 words
A semiconductor storage device having a word-line booster circuit comprising: a plurality of word-lines connected to each memory cell array; a drive signal generation means, operably coupled to said plurality of word-lines, for producing a word-line drive signal having a voltage higher than a power supply voltage; a decoder means, operably coupled to said drive signal generation means, for transmitting said word-line drive signal produced by said drive signal generation means, when said drive signal generation means is selected by an address signal; and a charging means, operably coupled to said drive signal generation means and to said decoder means, and connected to a signal path which transmits said word-line drive signal from said drive signal generation means to said decoder means, wherein said charging means charges said signal path before said word-line drive signal is output to said signal path.
Claim 3
Dependent Claim
25 words
A semiconductor storage device according to claim 1, wherein said charging means is selectively activated based on a reset signal which resets said decoder means.
Claim 4
Dependent Claim
21 words
A semiconductor storage device according to claim 1, wherein said charging means is activated after said address signal has been established.
Claim 5
Dependent Claim
173 words
A semiconductor storage device comprising: a plurality of word-lines connected to each memory cell array; a drive signal generation means, operably coupled to said plurality of word-lines, for generating a word-line drive signal which has a voltage value higher than the power supply voltage; a pre-decoder means, operably coupled to said drive signal generation means, for receiving a first address signal and said word-line drive signal; a main decoder means, operably coupled to said pre-decoder means, for receiving an output of said pre-decoder means and a second address signal; and a charging means, operably coupled to said drive signal generation means and to said pre-decoder and main decoder means, and further connected to at least one signal path between a first signal path from said drive signal generation means to said pre-decoder means or a second signal path from said pre-decoder means to said main decoder means, wherein said charging means charges either said first signal path or said second signal path before said word-line drive signal is output to said signal path.
Claim 6
Dependent Claim
173 words
A semiconductor storage device comprising: a plurality of word-lines connected to each memory cell array; a drive signal generation means, operably coupled to said plurality of word-lines, for generating a word-line drive signal which has a voltage value higher than the power supply voltage; a pre-decoder means, operably coupled to said drive signal generation means, for receiving a first address signal and said word-line drive signal; a main decoder means, operably coupled to said pre-decoder means, for receiving an output of said pre-decoder means and a second address signal; and a charging means, operably coupled to said drive signal generation means and to said pre-decoder and main decoder means, and further connected to at least one signal path between a first signal path from said drive signal generation means to said pre-decoder means or a second signal path from said pre-decoder means to said main decoder means, wherein said charging means charges either said first signal path or said second signal path before said word-line drive signal is output to said signal path.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-26 | 1998-12-26 | 1999-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-26 | 2002-12-26 | 2003-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-26 | 2006-12-26 | 2007-06-27 | $7700.00 | Window Closed / Lapsed |