US5427648A
Expired / Lapsed
US
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Method of forming porous silicon
Assignee: United States Department of the Army
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Filing: 1994-08-15
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Granted: 1995-06-27
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Expires: 2014-08-15
Abstract
Abstract Porous silicon is formed by patterning a single crystal silicon substrate prior to electrochemically etching the same. The process is a controlled method of fabricating silicon microstructures which exhibit luminescence and are useful in optoelectronic devices, such as light emitting diodes. The porous silicon produced has a high degree of uniformity and repeatability.
Inventors
- 👤 Jagadeesh Pamulapati
- 👤 Hongen Shen
- 👤 Mitra Dutta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; H10P; H10P50/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
88 words
A method for preparing a porous silicon microstructure which exhibits bright luminescence for use in optoelectronic devices, comprising the steps of: patterning a single crystal silicon substrate to form a plurality of single crystal silicon columns thereon; and electrochemically etching the patterned silicon substrate to form pores in the single crystal silicon columns and convert the columns into uniformly porous silicon, the etching step including the steps of decreasing the width of each column while also increasing the height of each column and the distance between each column.
Claim 2
Independent Claim
88 words
A method for preparing a porous silicon microstructure which exhibits bright luminescence for use in optoelectronic devices, comprising the steps of: patterning a single crystal silicon substrate to form a plurality of single crystal silicon columns thereon; and electrochemically etching the patterned silicon substrate to form pores in the single crystal silicon columns and convert the columns into uniformly porous silicon, the etching step including the steps of decreasing the width of each column while also increasing the height of each column and the distance between each column.
Claim 3
Dependent Claim
38 words
The method of claim 1, wherein the patterning comprises forming the columns using an electron beam, each column having a width of approximately 1000 Å and a height greater than 10,000 Å after the electron beam patterning step.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein the etching step comprises the step of decreasing the width of each column to about 20-30 Å.
Claim 5
Dependent Claim
23 words
The method of claim 1, wherein the electrochemical etching step comprises the step of anodizing the patterned single crystal substrate in an electrolyte.
Claim 6
Dependent Claim
35 words
The method of claim 4, wherein the anodizing step comprises exposing the patterned single crystal substrate to a hydrofluoric acid solution for 10 minutes at 25° C., the solution containing 50% by volume hydrofluoric acid.
Claim 7
Dependent Claim
26 words
The method of claim 1, wherein the etching step comprises electrochemically etching the patterned silicon substrate until the columns are between 50 Å-100 Å in diameter.
Claim 8
Dependent Claim
68 words
In a method of preparing a porous silicon microstructure which exhibits luminescence and which is useful in an optoelectronic device by electrochemically etching a silicon substrate to form pores in the silicon and convert the silicon into uniformly porous silicon, the improvement comprising the step of patterning the silicon substrate prior to the etching step to form a plurality of columns of single crystal silicon on the substrate.
Claim 9
Dependent Claim
68 words
In a method of preparing a porous silicon microstructure which exhibits luminescence and which is useful in an optoelectronic device by electrochemically etching a silicon substrate to form pores in the silicon and convert the silicon into uniformly porous silicon, the improvement comprising the step of patterning the silicon substrate prior to the etching step to form a plurality of columns of single crystal silicon on the substrate.
Claim 10
Dependent Claim
38 words
The method of claim 7, wherein the patterning comprises forming the columns using an electron beam, each column having a width of approximately 1000 Å and a height greater than 10,000 Å after the electron beam patterning step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-06-26 | 1998-12-26 | 1999-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-26 | 2002-12-26 | 2003-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-26 | 2006-12-26 | 2007-06-27 | $7700.00 | Window Closed / Lapsed |