Patent US5424244A successfully refreshed from Google Patents.
US5424244A
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US
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Process for laser processing and apparatus for use in the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1992-11-04
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Granted: 1995-06-13
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Expires: 2012-11-04
Abstract
Abstract A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
Inventors
- 👤 Hongyong Zhang
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; B; B60; B60R; B60R25/00; B60R25/01; B60R25/04; B60R25/06; B60R25/066; H10D30/0321; H10F; H10F39/00; H10F39/011; H10F39/016; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
83 words
A process for doping a semiconductor with an impurity which renders the semiconductor either N-conductive or P-conductive, said process comprising irradiating a laser beam to the surface of said semiconductor in a gas atmosphere containing said impurity, wherein, the laser beam is irradiated to the semiconductor while maintaining said semiconductor at a temperature higher than room temperature, but at such a temperature at which the gas does not undergo decomposition and at such which does not exceed the crystallization temperature of said semiconductor.
Claim 2
Dependent Claim
83 words
A process for doping a semiconductor with an impurity which renders the semiconductor either N-conductive or P-conductive, said process comprising irradiating a laser beam to the surface of said semiconductor in a gas atmosphere containing said impurity, wherein, the laser beam is irradiated to the semiconductor while maintaining said semiconductor at a temperature higher than room temperature, but at such a temperature at which the gas does not undergo decomposition and at such which does not exceed the crystallization temperature of said semiconductor.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said laser beam comprises laser pulses.
Claim 4
Dependent Claim
35 words
The process of claim 1 wherein said gas atmosphere comprises a gas selected from the group consisting of AsH 3 , PH 3 , BF 3 , BCl 3 and B(CH 3 ) 3 .
Claim 5
Dependent Claim
63 words
The process of claim 1 wherein a gate insulating layer is provided on said semiconductor and a gate electrode is provided on said gate insulating layer during said irradiating step, and source and drain regions in said semiconductor are doped with said impurity by said process with a channel region between said source and drain regions under said gate electrode in said semiconductor.
Claim 6
Dependent Claim
26 words
The process of claim 4 wherein said source and drain regions are activated simultaneously with the doping with said impurity into said source and drain regions.
Claim 7
Dependent Claim
19 words
The process of claim 1 wherein energy density of said laser beam is 150 to 350 mJ/cm 2 .
Claim 8
Dependent Claim
75 words
A process for doping a semiconductor with an impurity which renders the semiconductor either N-conductive or P-conductive, said process comprising irradiating a laser beam to the surface of said semiconductor in a gas atmosphere containing said impurity, wherein, the laser beam is irradiated to the semiconductor while applying an electromagnetic energy to said gas atmosphere so as to decompose said gas containing the impurity which imparts either an N-conductivity or a P-conductivity to the semiconductor.
Claim 9
Dependent Claim
75 words
A process for doping a semiconductor with an impurity which renders the semiconductor either N-conductive or P-conductive, said process comprising irradiating a laser beam to the surface of said semiconductor in a gas atmosphere containing said impurity, wherein, the laser beam is irradiated to the semiconductor while applying an electromagnetic energy to said gas atmosphere so as to decompose said gas containing the impurity which imparts either an N-conductivity or a P-conductivity to the semiconductor.
Claim 10
Dependent Claim
15 words
The process of claim 7 wherein said laser beam is emitted from an excimer laser.
Claim 11
Dependent Claim
12 words
The process of claim 7 wherein said laser beam comprises laser pulses.
Claim 12
Dependent Claim
32 words
The process of claim 7 wherein the application of said electromagnetic energy is carried out simultaneously with heating the semiconductor at a temperature not higher than the crystallization temperature of said semiconductor.
Claim 13
Dependent Claim
35 words
The process of claim 7 wherein said gas atmosphere comprises a gas selected from the group consisting of AsH 3 , PH 3 , BF 3 , BCl 3 and B(CH 3 ) 3 .
Claim 14
Dependent Claim
63 words
The process of claim 7 wherein a gate insulating layer is provided on said semiconductor and a gate electrode is provided on said gate insulating layer during said irradiating step, and source and drain regions in said semiconductor are doped with said impurity by said process with a channel region between said source and drain regions under said gate electrode in said semiconductor.
Claim 15
Dependent Claim
19 words
The process of claim 7 wherein energy density of said laser beam is 150 to 350 mJ/cm 2 .
Claim 16
Dependent Claim
50 words
A process for doping a silicon oxide coating prepared by vapor phase reaction using organosilane gas as the starting material at a substrate temperature of 600° C. or lower, said process comprising irradiating a laser beam to the surface of said silicon oxide coating in a gas atmosphere containing phosphorus.
Claim 17
Dependent Claim
50 words
A process for doping a silicon oxide coating prepared by vapor phase reaction using organosilane gas as the starting material at a substrate temperature of 600° C. or lower, said process comprising irradiating a laser beam to the surface of said silicon oxide coating in a gas atmosphere containing phosphorus.
Claim 18
Dependent Claim
16 words
The process of claim 14 wherein a silicon film is provided under said silicon oxide coating.
Claim 19
Dependent Claim
15 words
The process of claim 14 wherein said laser beam is emitted from an excimer laser.
Claim 20
Dependent Claim
19 words
The process of claim 14 wherein energy density of said laser beam is 200 to 300 mJ/cm 2 .
Claim 21
Dependent Claim
11 words
The process of claim 14 wherein said gas atmosphere comprises phosphine.
Claim 22
Independent Claim
68 words
A method for forming a semiconductor device comprising the steps of: providing a semiconductor film in a chamber; introducing a gas containing a dopant species into said chamber; and irradiating a portion of said semiconductor film with a laser light so that said dopant species is introduced into the irradiated portion of said semiconductor film, wherein said semiconductor film is heated by a heating means during said irradiating.
Claim 23
Independent Claim
68 words
A method for forming a semiconductor device comprising the steps of: providing a semiconductor film in a chamber; introducing a gas containing a dopant species into said chamber; and irradiating a portion of said semiconductor film with a laser light so that said dopant species is introduced into the irradiated portion of said semiconductor film, wherein said semiconductor film is heated by a heating means during said irradiating.
Claim 24
Dependent Claim
15 words
The method of claim 19 further comprising crystallizing said semiconductor film before introducing said gas.
Claim 25
Dependent Claim
11 words
The method of claim 20 wherein said semiconductor film comprises silicon.
Claim 26
Dependent Claim
15 words
The method of claim 20 wherein said semiconductor is heated not lower than 200° C.
Claim 27
Independent Claim
70 words
A method for forming a semiconductor device comprising the steps of: providing a semiconductor film in a chamber: introducing a gas containing a dopant species into said chamber; applying an electromagnetic energy to said gas in order to activate said gas; and irradiating at least a portion of said semiconductor film with a laser light so that said dopant species is introduced into the irradiated portion of said semiconductor film.
Claim 28
Independent Claim
70 words
A method for forming a semiconductor device comprising the steps of: providing a semiconductor film in a chamber: introducing a gas containing a dopant species into said chamber; applying an electromagnetic energy to said gas in order to activate said gas; and irradiating at least a portion of said semiconductor film with a laser light so that said dopant species is introduced into the irradiated portion of said semiconductor film.
Claim 29
Dependent Claim
14 words
The method of claim 23 wherein said semiconductor film is heated during said irradiating.
Claim 30
Dependent Claim
11 words
The method of claim 24 wherein said semiconductor film comprises silicon.
References Cited (Backward Citations)
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