Integrated current-limiter device for power MOS transistors

Claim 2

An electronic device structure, comprising: an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type emitter region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and an insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; wherein said semiconductor layer is an epitaxial layer, and overlies a heavily-doped N-type substrate.

Claim 3

An electronic device structure, comprising: an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type emitter region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and an insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions wherein said deep-body region defines a deeper junction depth than said intermediate doped region does, and said intermediate doped region defines a deeper junction depth than said body region does.

Claim 4

An electronic device structure, comprising: an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type emitter region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and an insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions wherein said deep-body region defines a deeper junction depth than said intermediate doped region does, and said intermediate doped region defines a deeper junction depth than said body region does.

Claim 5

An electronic device structure, comprising: an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type collector region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and a first insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated conductive layer which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region; wherein said semiconductor layer is an epitaxial layer, and overlies a heavily-doped N-type substrate.

Claim 6

An electronic device structure, comprising: an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type collector region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and a first insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated conductive layer which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region; wherein said semiconductor layer is an epitaxial layer, and overlies a heavily-doped N-type substrate.

Claim 7

An electronic device structure, comprising; an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type emitter region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and a first insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated conductive layer which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region wherein said deep-body region defines a deeper junction depth than said intermediate doped region does, and said intermediate doped region defines a deeper junction depth than said body region does.

Claim 8

An electronic device structure, comprising; an N-type monocrystalline semiconductor layer; a shallow heavily-doped N-type collector region in said semiconductor layer near a surface thereof; a P-type body region surrounding said collector region; a shallow heavily-doped N-type emitter region in said semiconductor layer near said surface thereof; a P-type deep-body region which partially surrounds said emitter region; a P-type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a heavily doped P-type base contact region which adjoins said body region; and a first insulated conductive layer which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated conductive layer which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region wherein said deep-body region defines a deeper junction depth than said intermediate doped region does, and said intermediate doped region defines a deeper junction depth than said body region does.

Claim 9

An integrated current-limiter device for MOS power transistors provided with a bipolar control transistor, comprising a semiconductor substrate of a first type of conductivity, an epitaxial layer of said first type of conductivity overlying said substrate and, for said bipolar control transistor, a base region of a second type of conductivity contained in said epitaxial layer and operatively connected to a base contact and laterally separated collector and emitter regions of the first type of conductivity contained in said base region and operatively connected to respective collector and emitter contacts, wherein said base region comprises at least one highly-doped deep-body region which almost completely contains said emitter region, a lightly-doped body region which contains said collector region and an intermediate doped region which, together with said first deep-body region, contains said emitter region, and wherein at least one first portion of a layer of polysilicon on gate oxide overlays an area of said base region between said collector and emitter regions and is electrically connected to said collector contact.

Claim 10

An integrated current-limiter device for MOS power transistors provided with a bipolar control transistor, comprising a semiconductor substrate of a first type of conductivity, an epitaxial layer of said first type of conductivity overlying said substrate and, for said bipolar control transistor, a base region of a second type of conductivity contained in said epitaxial layer and operatively connected to a base contact and laterally separated collector and emitter regions of the first type of conductivity contained in said base region and operatively connected to respective collector and emitter contacts, wherein said base region comprises at least one highly-doped deep-body region which almost completely contains said emitter region, a lightly-doped body region which contains said collector region and an intermediate doped region which, together with said first deep-body region, contains said emitter region, and wherein at least one first portion of a layer of polysilicon on gate oxide overlays an area of said base region between said collector and emitter regions and is electrically connected to said collector contact.

Claim 11

The integrated device of claim 5, comprising a deep-body region located to one side of said body region to provide a channel stop and base contact structure.

Claim 12

The integrated device of claim 5, comprising a second deep-body region, said first and second deep-body regions being self-aligned with said first portion of said layer of polysilicon and being wholly contained inside said intermediate-doped region and said body region, respectively.

Claim 13

The integrated device of claim 5, wherein said emitter and collector regions are self-aligned with said first portion of said layer of polysilicon.

Claim 14

The integrated device of claim 5, comprising a second portion of said layer of polysilicon, and an emitter contact which is connected to said second portion and to said emitter region.

Claim 15

An integrated circuit device structure, comprising: a monocrystalline semiconductor layer of a first conductivity type; a shallow collector region which is heavily doped with said first conductivity type and which is in said semiconductor layer near a surface thereof; a body region, of a second conductivity type, surrounding said collector region; a shallow emitter region which is heavily doped with said first conductivity type and which is in said semiconductor layer near said surface thereof; a second-conductivity type deep-body region which partially surrounds said emitter region; a second-conductivity type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a base contact region which adjoins said body region, and which is heavily doped with said second conductivity type; and a first insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region, wherein said semiconductor layer consists essentially of a silicon epitaxial layer overlying a substrate which is heavily doped with said first conductivity type.

Claim 16

An integrated circuit device structure, comprising: a monocrystalline semiconductor layer of a first conductivity type; a shallow collector region which is heavily doped with said first conductivity type and which is in said semiconductor layer near a surface thereof; a body region, of a second conductivity type, surrounding said collector region; a shallow emitter region which is heavily doped with said first conductivity type and which is in said semiconductor layer near said surface thereof; a second-conductivity type deep-body region which partially surrounds said emitter region; a second-conductivity type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a base contact region which adjoins said body region, and which is heavily doped with said second conductivity type; and a first insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region, wherein said semiconductor layer consists essentially of a silicon epitaxial layer overlying a substrate which is heavily doped with said first conductivity type.

Claim 17

An integrated circuit device structure, comprising: a monocrystalline semiconductor layer of a first conductivity type; a shallow collector region which is heavily doped with said first conductivity type and which is in said semiconductor layer near a surface thereof; a body region, of a second conductivity type, surrounding said collector region; a shallow emitter region which is heavily doped with said first conductivity type and which is in said semiconductor layer near said surface thereof; a second-conductivity type deep-body region which partially surrounds said emitter region; a second-conductivity type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a base contact region which adjoins said body region, and which is heavily doped with said second conductivity type; and a first insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region, wherein said intermediate doped region defines a deeper junction depth than said body region does.

Claim 18

An integrated circuit device structure, comprising: a monocrystalline semiconductor layer of a first conductivity type; a shallow collector region which is heavily doped with said first conductivity type and which is in said semiconductor layer near a surface thereof; a body region, of a second conductivity type, surrounding said collector region; a shallow emitter region which is heavily doped with said first conductivity type and which is in said semiconductor layer near said surface thereof; a second-conductivity type deep-body region which partially surrounds said emitter region; a second-conductivity type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a base contact region which adjoins said body region, and which is heavily doped with said second conductivity type; and a first insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region, wherein said intermediate doped region defines a deeper junction depth than said body region does.

Claim 19

An integrated circuit device structure, comprising: a monocrystalline semiconductor layer of a first conductivity type; a shallow collector region which is heavily doped with said first conductivity type and which is in said semiconductor layer near a surface thereof; a body region, of a second conductivity type, surrounding said collector region; a shallow emitter region which is heavily doped with said first conductivity type and which is in said semiconductor layer near said surface thereof; a second-conductivity type deep-body region which partially surrounds said emitter region; a second-conductivity type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a base contact region which adjoins said body region, and which is heavily doped with said second conductivity type; and a first insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region; wherein said deep-body region defines a deeper junction depth than said intermediate doped region does, and said intermediate doped region has a deeper junction depth than said body region.

Claim 20

An integrated circuit device structure, comprising: a monocrystalline semiconductor layer of a first conductivity type; a shallow collector region which is heavily doped with said first conductivity type and which is in said semiconductor layer near a surface thereof; a body region, of a second conductivity type, surrounding said collector region; a shallow emitter region which is heavily doped with said first conductivity type and which is in said semiconductor layer near said surface thereof; a second-conductivity type deep-body region which partially surrounds said emitter region; a second-conductivity type intermediate doped region which adjoins said emitter region, said emitter region being totally surrounded by said deep-body region in combination with said intermediate doped region; a base contact region which adjoins said body region, and which is heavily doped with said second conductivity type; and a first insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said collector, and which overlies, and is capacitively coupled to, said surface at locations between said collector and emitter regions; and a second insulated polycrystalline conductive layer which predominantly comprises silicon, and which is electrically connected to said emitter, and which overlies, and is capacitively coupled to, portions of said deep-body region; wherein said deep-body region defines a deeper junction depth than said intermediate doped region does, and said intermediate doped region has a deeper junction depth than said body region.