Method for manufacturing a TFT panel

Claim 1

A method for manufacturing a TFT panel comprising: a first step of forming gate lines, capacitor lines, and two oxide voltage-apply lines on a substrate such that the gate lines are connected to the oxide voltage-apply lines and both ends of each of the capacitor lines are connected to the gate lines; a second step of applying a voltage to the oxide voltage-apply lines for forming oxide films on surfaces of the gate lines and the capacitor lines by anodization; a third step of forming thin-film transistors, pixel electrodes connected to the thin-film transistors, data lines connected to the thin-film transistors, and a ground line connected to the capacitor lines; and a fourth step of separating the gate lines from the oxide voltage-apply lines and separating the capacitor lines from the gate lines in a process after the second step of forming the oxide films; wherein: the first step includes a process of forming the oxide voltage-apply lines on the substrate with the gate line arranged between the oxide voltage-apply lines and connected to the oxide voltage-apply lines, and the capacitor lines arranged between the oxide voltage apply lines and connected to the oxide voltage-apply lines; the second step includes a process of covering contact points between the capacitor lines and the gate lines with a resist, and a process of anodizing the exposed surfaces of the capacitor lines and the gate lines; and the fourth step includes a process of separating the capacitor lines from the gate lines by etching non-anodized portions of the contact points between the capacitor lines and the gate lines.

Claim 2

A method for manufacturing a TFT panel comprising: a first step of forming gate lines, capacitor lines, and two oxide voltage-apply lines on a substrate such that the gate lines are connected to the oxide voltage-apply lines and both ends of each of the capacitor lines are connected to the gate lines; a second step of applying a voltage to the oxide voltage-apply lines for forming oxide films on surfaces of the gate lines and the capacitor lines by anodization; a third step of forming thin-film transistors, pixel electrodes connected to the thin-film transistors, data lines connected to the thin-film transistors, and a ground line connected to the capacitor lines; and a fourth step of separating the gate lines from the oxide voltage-apply lines and separating the capacitor lines from the gate lines in a process after the second step of forming the oxide films; wherein: the first step includes a process of forming the oxide voltage-apply lines on the substrate with the gate line arranged between the oxide voltage-apply lines and connected to the oxide voltage-apply lines, and the capacitor lines arranged between the oxide voltage apply lines and connected to the oxide voltage-apply lines; the second step includes a process of covering contact points between the capacitor lines and the gate lines with a resist, and a process of anodizing the exposed surfaces of the capacitor lines and the gate lines; and the fourth step includes a process of separating the capacitor lines from the gate lines by etching non-anodized portions of the contact points between the capacitor lines and the gate lines.

Claim 3

A method for manufacturing a TFT panel comprising: a first step of forming gate lines, capacitor lines, and two oxide voltage-apply lines on an insulating substrate such that the gate lines are connected to the oxide voltage-apply lines, and the capacitor lines are connected to the gate lines; a second step of applying a voltage to the oxide voltage-apply lines for generating oxide films on at least the surfaces of the gate lines and the capacitor lines by anodization; a third step of forming thin-film transistors including a gate insulating film and a protecting film, pixel electrodes connected to the thin-film transistors, data lines connected to the thin-film transistors, and a ground line connected to the capacitor lines; and a fourth step of separating the capacitor lines, the gate lines and the oxide voltage-apply lines from each other in a step after the second step and; wherein: the second step includes a process of covering contact points between the capacitor lines and the gate lines with a resist, and a process of anodizing the exposed surfaces of the capacitor lines and the gate lines; and the fourth step includes a process of removing gate insulating films formed on the contact points between the capacitor lines and the gate lines and the protecting films formed on the gate insulating films, and a process of separating the capacitor lines from the gate lines by removing non-anodized portions of the contact points at the same time with etching a conductive film formed after the process of removing the gate insulating films and the protecting films.

Claim 4

A method for manufacturing a TFT panel comprising: a first step of forming gate lines, capacitor lines, and two oxide voltage-apply lines on an insulating substrate such that the gate lines are connected to the oxide voltage-apply lines, and the capacitor lines are connected to the gate lines; a second step of applying a voltage to the oxide voltage-apply lines for generating oxide films on at least the surfaces of the gate lines and the capacitor lines by anodization; a third step of forming thin-film transistors including a gate insulating film and a protecting film, pixel electrodes connected to the thin-film transistors, data lines connected to the thin-film transistors, and a ground line connected to the capacitor lines; and a fourth step of separating the capacitor lines, the gate lines and the oxide voltage-apply lines from each other in a step after the second step and; wherein: the second step includes a process of covering contact points between the capacitor lines and the gate lines with a resist, and a process of anodizing the exposed surfaces of the capacitor lines and the gate lines; and the fourth step includes a process of removing gate insulating films formed on the contact points between the capacitor lines and the gate lines and the protecting films formed on the gate insulating films, and a process of separating the capacitor lines from the gate lines by removing non-anodized portions of the contact points at the same time with etching a conductive film formed after the process of removing the gate insulating films and the protecting films.

Claim 9

A method for manufacturing a TFT panel comprising: a first step of forming two oxide voltage-apply lines, gate lines provided between the two oxide voltage-apply lines and each gate line including a terminal which is wider than other portions thereof, capacitor lines provided between the two oxide voltage-apply lines on an insulating substrate such that each of the gate lines is connected to a corresponding one of the oxide voltage-apply lines, and each of the capacitor lines is connected to the gate lines at both ends of the capacitor lines; a second step of applying a voltage to the oxide voltage-apply lines and anodizing surfaces of the gate lines and the capacitor lines; a third step of forming thin-film transistors, pixel electrodes connected to the thin-film transistors, data lines connected to the thin-film transistors, and a ground line connected to the capacitor lines; and a fourth step of separating the capacitor lines, the gate lines and the oxide voltage-apply lines from one another.

Claim 10

A method for manufacturing a TFT panel comprising: a first step of forming two oxide voltage-apply lines, gate lines provided between the two oxide voltage-apply lines and each gate line including a terminal which is wider than other portions thereof, capacitor lines provided between the two oxide voltage-apply lines on an insulating substrate such that each of the gate lines is connected to a corresponding one of the oxide voltage-apply lines, and each of the capacitor lines is connected to the gate lines at both ends of the capacitor lines; a second step of applying a voltage to the oxide voltage-apply lines and anodizing surfaces of the gate lines and the capacitor lines; a third step of forming thin-film transistors, pixel electrodes connected to the thin-film transistors, data lines connected to the thin-film transistors, and a ground line connected to the capacitor lines; and a fourth step of separating the capacitor lines, the gate lines and the oxide voltage-apply lines from one another.