Silicon-containing positive resist and use in multilayer metal structures

Claim 1

A photosensitive silicon-containing resist composition comprising a phenolic hydroxyl group containing siloxane polymer partially esterified with diazonaphthoquinone groups selected from the group consisting of the poly(p-hydroxybenzyl-silsesquioxane-co-p-methoxybenzyl-silsesquioxane-co-p-(2-diazo-1-naphthoquinonesulfonyloxy)silsesquioxane) represented by the formula ##STR9## the poly(p-hydroxyphenyl-silsesquioxane-co-p-methoxyphenyl-silsesquioxane-co-p-(2-diazo-1-naphthoquinonesulfonyloxy)silsesquioxane) represented by the formula ##STR10## and the poly (methyl-p-hydroxybenzylsiloxane-co-methyl-p-methoxybenzylsiloxane-co-methyl-p-(2-diazo-1-naphthoquinonesulfonyloxy)siloxane) represented by the ##STR11## wherein (1) each R 1 to R 4 group is individually selected from group consisting of H and Si(CH 3 ) 3 , (2) each Ar 1 to Ar 8 group is individually selected from the group consisting of p-hydroxyphenyl, p-methoxyphenyl and p-(2-diazo-1-naphthoquinonesulfonyloxy)phenyl, as represented respectively by the formulas ##STR12## so that the molar ratio in said polymer of p-hydroxyphenyl groups to p-methoxyphenyl groups to p(2-diazo-1-naphthoquinonesulfonyloxy)phenyl groups is in the range from 75:20:5 to 30:50:20, (3) DQ is a 2-diazo-1-naphthoquinone-4 residue, a 2-diazo-1-naphthoquinone-5 residue as represented respectively by the formulas ##STR13## or mixtures thereof, and (4) n is an integer from 5 to 9, and (5) o and p are, independently, 0 or 1.