US5418186A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a bump on a semiconductor chip
Assignee: Samsung Electronics Co Ltd
•
Filing: 1994-07-15
•
Granted: 1995-05-23
•
Expires: 2014-07-15
Abstract
Abstract A method for manufacturing a bump on a semiconductor comprising the steps of: forming metal pad on a portion of a surface of a substrate, forming a barrier metal layer over the surface of the substrate such that the barrier metal layer cover the metal pad, forming a photoresist layer over the barrier metal layer, forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad, forming a chip bump in the opening, selectively removing the photoresist layer using the bump as a mask, such that residual portions of the photoresist layer remain, and such that portions of the barrier metal layer are exposed, etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask, and removing the residual photoresist layer.
Inventors
- 👤 Jong-han Park
- 👤 Chun-geun Park
- 👤 Seon-ho Ha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:02
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W72/01; H10W72/012; H10W72/01231; H10W72/01233; H10W72/01235; H10W72/01251; H10W72/01255; H10W72/019; H10W72/221; H10W72/251; H10W72/252; H10W72/29; H10W72/90; H10W72/931; H10W72/934; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
135 words
A method for manufacturing a bump on a semiconductor device, comprising the steps of: forming a metal pad on a surface of a substrate; forming a barrier metal layer over the surface of the substrate such that the barrier metal layer covers the metal pad; forming a photoresist layer over the barrier metal layer; forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad; forming a chip bump in the opening; selectively removing the photoresist layer using the bump as a mask, such that residual portions of the photoresist layer remain, and such that portions of the barrier metal layer are exposed; etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask; and removing the residual photoresist layer.
Claim 2
Independent Claim
135 words
A method for manufacturing a bump on a semiconductor device, comprising the steps of: forming a metal pad on a surface of a substrate; forming a barrier metal layer over the surface of the substrate such that the barrier metal layer covers the metal pad; forming a photoresist layer over the barrier metal layer; forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad; forming a chip bump in the opening; selectively removing the photoresist layer using the bump as a mask, such that residual portions of the photoresist layer remain, and such that portions of the barrier metal layer are exposed; etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask; and removing the residual photoresist layer.
Claim 3
Dependent Claim
46 words
A method as claimed in claim 1, wherein the barrier metal layer is formed having a first thickness measured in a direction orthogonal to the surface of the substrate, and wherein the bump is formed having a second thickness several ten times greater the first thickness.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 1, wherein the step of selectively removing the photoresist layer is performed using a mask to shield the bump.
Claim 5
Dependent Claim
18 words
A method as claimed in claim 1, wherein the barrier metal layer is a composite comprising multiple layers.
Claim 6
Independent Claim
23 words
A method as claimed in claims 4, wherein the multiple layers comprise a first barrier metal layer and a second barrier metal layer.
Claim 7
Dependent Claim
48 words
A method as claimed in claim 5, wherein the step of etching the composite barrier metal layer comprises the substeps of: etching the first barrier metal layer; removing the residual photoresist layer; and etching the second barrier metal layer using the first barrier metal layer as a mask.
Claim 8
Dependent Claim
25 words
A method as claimed in claim 1, wherein the photoresist layer is formed having a thickness in the range of from 2 to 100 μm.
Claim 9
Dependent Claim
23 words
A method as claimed in claim 1, wherein the bump is formed from a deposition of one of gold, silver, solder, and copper.
Claim 10
Dependent Claim
41 words
A method as claimed in claim 1, where the barrier metal layer is formed of one of Ti, TiW, TiWN, Ni, TiN, Pd, W, Cu, Cr, Au, and alloys of Ti, TiW, TiWN, Ni, TiN, Pd, W, Cu, Cr, and Au.
Claim 11
Dependent Claim
35 words
A method as claimed in claim 5, wherein the first barrier metal layer is formed from one of Ti, and Cr, and the second barrier metal layer is formed from one of Pd, and Cu.
Claim 12
Dependent Claim
38 words
A method as claimed in claim 1, wherein the step of forming a metal pad comprises the substeps of: forming a metal layer over the surface of the substrate; patterning the metal layer to form the metal pad.
Claim 13
Dependent Claim
13 words
A method as claimed in claim 11, wherein the metal layer is aluminum.
Claim 14
Dependent Claim
69 words
A method as claimed in claim 1, wherein the bump formed in the opening has a mushroom shape having a stem part filling the opening, and a head part extending beyond the stem portion and overlaying a portion of the photoresist layer, wherein the portion of photoresist layer overlaid by the head part is the remaining residual portion of the photoresist layer when the photoresist layer is selectively removed.
Claim 15
Independent Claim
137 words
A method for manufacturing a bump on a semiconductor device, comprising the steps of: forming a metal pad on a surface of a substrate; forming a barrier metal layer over the surface such that the barrier metal layer covers the metal pad; forming a first photoresist layer over the barrier metal layer; forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad; forming a chip bump in the opening; forming a mask over the bump; selectively removing the photoresist layer using the mask, such that a residual portion of the photoresist layer remains, and such that portions of the barrier metal layer are exposed; etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask; and removing the residual photoresist layer.
Claim 16
Independent Claim
137 words
A method for manufacturing a bump on a semiconductor device, comprising the steps of: forming a metal pad on a surface of a substrate; forming a barrier metal layer over the surface such that the barrier metal layer covers the metal pad; forming a first photoresist layer over the barrier metal layer; forming an opening in the photoresist layer to expose a portion of the barrier metal layer overlaying the metal pad; forming a chip bump in the opening; forming a mask over the bump; selectively removing the photoresist layer using the mask, such that a residual portion of the photoresist layer remains, and such that portions of the barrier metal layer are exposed; etching the exposed portions of the barrier metal layer using the residual photoresist layer as a mask; and removing the residual photoresist layer.
References Cited (Backward Citations)
US4948754A
Cited
US5057453A
Cited
JPH0265140A
Cited
US5298459A
Cited
US5244833A
Cited
JPH04120734A
Cited
US5300445A
Cited
JPH04245436A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-22 | 1998-11-21 | 1999-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-22 | 2002-11-21 | 2003-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-22 | 2006-11-21 | 2007-05-23 | $7700.00 | Window Closed / Lapsed |