Method for making a semiconductor bump electrode with a skirt

Claim 1

A method of manufacturing a semiconductor device having a bump electrode comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode.

Claim 2

A method of manufacturing a semiconductor device having a bump electrode comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode.

Claim 6

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film, the electrode pad being made of a metal whose main component is Al, the insulating passivation film being made of Si 3 N 4 , and the metal film being a three-layered metal film composed of Ti, Ni and Pd in this order form the lower to upper layer; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode, the bump electrode being made of Au.

Claim 7

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film, the electrode pad being made of a metal whose main component is Al, the insulating passivation film being made of Si 3 N 4 , and the metal film being a three-layered metal film composed of Ti, Ni and Pd in this order form the lower to upper layer; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode, the bump electrode being made of Au.

Claim 8

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation, said electrode being made of a metal whose main component is Al, said metal film being made of a two-layered metal film composed of WSi and Pd in this order from the lower to upper layer and the insulating passivation film being made of Si 3 N 4 ; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode made of Au.

Claim 9

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation, said electrode being made of a metal whose main component is Al, said metal film being made of a two-layered metal film composed of WSi and Pd in this order from the lower to upper layer and the insulating passivation film being made of Si 3 N 4 ; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode made of Au.

Claim 10

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film, said electrode pad being made of a metal whose main component is Au, said insulating passivation film being made of Si 3 N 4 and said metal film is a three-layered metal film composed of WSi, Ni and Pd in this order from the lower to the upper layer; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode made of Au.

Claim 11

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film, said electrode pad being made of a metal whose main component is Au, said insulating passivation film being made of Si 3 N 4 and said metal film is a three-layered metal film composed of WSi, Ni and Pd in this order from the lower to the upper layer; laminating a dry film on said metal film; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode made of Au.

Claim 12

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film; laminating a dry film on said metal film, lamination performed under the condition that dry film of 20 μm thickness is used, the temperature of the roll is constant at A105° C., the roll feed speed is constant at 0.3 m/minute, and the roll pressure is equal to or greater than about 22 Kg/cm 2 ; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode.

Claim 13

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film; laminating a dry film on said metal film, lamination performed under the condition that dry film of 20 μm thickness is used, the temperature of the roll is constant at A105° C., the roll feed speed is constant at 0.3 m/minute, and the roll pressure is equal to or greater than about 22 Kg/cm 2 ; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode.

Claim 14

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film; laminating a dry film on said metal film, lamination being formed under the conditions that dry film of 20 μm thickness be used, the temperature of said roll is constant at 105° C., the roll pressure is constant at 28 K/cm 2 , and the roll feed speed is equal to or greater than about 0.31 m/minute; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode.

Claim 15

A method of manufacturing a semiconductor device having a bump electrode, comprising the steps of: forming on a semiconductor substrate an electrode pad and an insulating passivation film having a contact hole for contact with said pad, and forming a metal film on said pad and said insulating passivation film; laminating a dry film on said metal film, lamination being formed under the conditions that dry film of 20 μm thickness be used, the temperature of said roll is constant at 105° C., the roll pressure is constant at 28 K/cm 2 , and the roll feed speed is equal to or greater than about 0.31 m/minute; forming an opening in said dry film above said pad, said opening extending to said metal film; performing electrolytic plating by using said metal film as one of electrolytic electrodes, and forming a bump substance as a deposit on said metal film above said electrode pad; wherein said laminating step is performed under a laminating condition that in said deposition step, using a hot laminator with a roll, said bump material extends into a space between said dry film and said metal film to form a skirt so that the shape of said deposit is composed of a cubical portion corresponding in shape to said opening and said skirt extending outward from the bottom of said cubical portion; removing said dry film; and removing said metal film by using said deposit as a mask to make said deposit as a bump electrode.