US5418183A
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Method for a reflective digitally tunable laser
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1994-09-19
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Granted: 1995-05-23
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Expires: 2014-09-19
Abstract
Abstract A method for forming a reflective digitally tunable laser using selective area epitaxy is disclosed. The laser comprises passive waveguides and a plurality of optical amplifiers. The waveguides and optical amplifiers are formed by depositing multiple quantum wells having a suitable bandgap. According to the method, the multiple quantum wells forming both the passive waveguides and the optical amplifiers are deposited simultaneously using a dielectric mask. The mask comprises dual, rectangularly-shaped strips of dielectric material, spaced to form a gap. The multiple quantum wells grown in the gap are suitable for use as optical amplifiers, and those grown outside of the gap are suitable for use as passive waveguides.
Inventors
- 👤 Charles H. Joyner
- 👤 Judith P. Meester
- 👤 Martin Zirngibl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4062; H10P14/22; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H01S5/0268; H01S5/10; H01S5/14; H01S5/141; H01S5/20; H01S5/2054; H01S5/2077; H01S5/4068; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
243 words
A method for forming a tunable laser on a semiconductor substrate, comprising: (a) depositing, in a single growth, a first type of multiquantum well material suitable for forming passive waveguides and a second type of multiquantum well material suitable for forming optical amplifiers; (b) patterning the first type of multiquantum well material deposited in step (a) into: (i) a wavelength selective device having a free space region and a plurality of waveguides, each waveguide having a different length, the plurality of waveguides collectively defining an optical grating that is connected at one end to the free space region and (ii) a plurality of input waveguides which connect to the free space region; and patterning the second type of multiquantum well material deposited in step (a) into at least two controllable optical amplifiers in at least two of the waveguides of the plurality of input waveguides; (c) cleaving the semiconductor substrate at two spaced locations to form a first and second facet mirror, where the first facet mirror is connected to the wavelength selective device by the input waveguides containing the optical amplifiers and the second facet mirror is connected to the plurality of waveguides defining the optical grating; and (d) depositing at least two electrodes, one for each controllable optical amplifier, where each electrode is in electrical contact with one controllable optical amplifier so that a bias current can be selectively provided to any one of the at least two controllable optical amplifiers.
Claim 2
Independent Claim
243 words
A method for forming a tunable laser on a semiconductor substrate, comprising: (a) depositing, in a single growth, a first type of multiquantum well material suitable for forming passive waveguides and a second type of multiquantum well material suitable for forming optical amplifiers; (b) patterning the first type of multiquantum well material deposited in step (a) into: (i) a wavelength selective device having a free space region and a plurality of waveguides, each waveguide having a different length, the plurality of waveguides collectively defining an optical grating that is connected at one end to the free space region and (ii) a plurality of input waveguides which connect to the free space region; and patterning the second type of multiquantum well material deposited in step (a) into at least two controllable optical amplifiers in at least two of the waveguides of the plurality of input waveguides; (c) cleaving the semiconductor substrate at two spaced locations to form a first and second facet mirror, where the first facet mirror is connected to the wavelength selective device by the input waveguides containing the optical amplifiers and the second facet mirror is connected to the plurality of waveguides defining the optical grating; and (d) depositing at least two electrodes, one for each controllable optical amplifier, where each electrode is in electrical contact with one controllable optical amplifier so that a bias current can be selectively provided to any one of the at least two controllable optical amplifiers.
Claim 3
Dependent Claim
70 words
The method of claim 1 wherein the step of depositing, in a single growth, a first and second type of multiquantum well material further comprises depositing at least two masks, each mask comprising two dielectric strips spaced to form a gap, wherein the mask causes the first type of multiquantum well material to deposit outside the gap, and the second type of multiquantum well material to deposit in the gap.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein the dielectric strips are formed from material selected from the group consisting of SiO x and SiN x .
Claim 5
Dependent Claim
24 words
The method of claim 2 wherein the gap is 15 micrometers wide and each of the strips forming the mask is 40 micrometers wide.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the first and second type of multiquantum well material is the quaternary compound InGaAsP.
Claim 7
Dependent Claim
41 words
The method of claim 1 wherein the first type of multiquantum well material has a bandgap wavelength of about 1.0 to 1.4 micrometers, and the second type of multiquantum well material has a bandgap wavelength of about 1.4 to 1.6 micrometers.
Claim 8
Dependent Claim
36 words
The method of claim 1 wherein the first type of multiquantum well material has a bandgap wavelength of about 1.35 and the second type of multiquantum well material has a bandgap wavelength of about 1.55 micrometers.
Claim 9
Dependent Claim
29 words
The method of claim 1 wherein the first and second type of multiquantum well material is deposited using organo metallic vapor phase epitaxy at 100 torr and 615° C.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein the substrate is <100> oriented InP, S doped at 10 18 /cm 3 .
Claim 11
Dependent Claim
21 words
The method of claim 1 further comprising coating the second facet mirror with a material so that it is partially transmissive.
Claim 12
Dependent Claim
21 words
The method of claim 1 further comprising coating the first facet mirror with a material so that it is highly reflective.
Claim 13
Dependent Claim
20 words
The method of claim 1 further comprising coating the second facet mirror with an anti-reflection material at a single location.
Claim 14
Dependent Claim
66 words
The method of claim 1 wherein the step of depositing a first type of multiple quantum well material suitable for forming passive waveguides and a second type of multiquantum well material suitable for forming optical amplifiers further comprises depositing a guiding layer on the semiconductor substrate for vertical waveguiding, wherein the first and second type of multiple quantum well material is deposited within the guiding layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-05-22 | 1998-11-21 | 1999-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-22 | 2002-11-21 | 2003-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-22 | 2006-11-21 | 2007-05-23 | $7700.00 | Window Closed / Lapsed |