US5417798A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching method
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1992-01-22
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Granted: 1995-05-23
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Expires: 2012-01-22
Abstract
Abstract Reactive ion etching of diamond using oxygen plasma roughs the surface of diamond due to the strong bombardment of oxygen ions with various kinetic energy. A metal grid with holes is installed between the oxygen plasma and the diamond. Since the metal grid is biased in order to prevent oxygen plasma from being in contact with the diamond, the oxygen ions which have passed the grid will bombard the surface of the diamond with common, low energy. The etched surface becomes smooth.
Inventors
- 👤 Yoshiki Nishibayashi
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32697; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3348
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
138 words
Etching method for etching diamond with oxygen plasma in a reactive etching apparatus having two electrodes, a gas inlet, a gas outlet and a vacuum pump, comprising the steps of mounting a diamond specimen on one electrode, introducing an etching gas including oxygen, activating the etching gas into plasma including oxygen ions by applying AC voltage or DC voltage between two electrodes and etching the surface of the diamond specimen by bombarding oxygen ions, characterized in that a metal grid with holes is installed between the plasma and the diamond specimen, some voltage is applied to the metal grid, the metal grid is rotated around a vertical axis and the diamond is etched by the oxygen ions with nearly the same kinetic energy by controlling the voltage of plasma by regulating the voltage applied to the metal grid.
Claim 2
Dependent Claim
138 words
Etching method for etching diamond with oxygen plasma in a reactive etching apparatus having two electrodes, a gas inlet, a gas outlet and a vacuum pump, comprising the steps of mounting a diamond specimen on one electrode, introducing an etching gas including oxygen, activating the etching gas into plasma including oxygen ions by applying AC voltage or DC voltage between two electrodes and etching the surface of the diamond specimen by bombarding oxygen ions, characterized in that a metal grid with holes is installed between the plasma and the diamond specimen, some voltage is applied to the metal grid, the metal grid is rotated around a vertical axis and the diamond is etched by the oxygen ions with nearly the same kinetic energy by controlling the voltage of plasma by regulating the voltage applied to the metal grid.
Claim 3
Dependent Claim
140 words
Etching method for etching diamond with oxygen plasma in a reactive etching apparatus having two electrodes, a gas inlet, a gas outlet and a vacuum pump, comprising the steps of mounting a diamond specimen on one electrode, rotating the electrode supporting the diamond specimen around a vertical axis, introducing an etching gas including oxygen, activating the etching gas into plasma including oxygen ions by applying AC voltage or DC voltage between two electrodes and etching the surface of the diamond specimen by bombarding oxygen ions, characterized in that a metal grid with holes is installed between the plasma and the diamond specimen, some voltage is applied to the metal grid and the diamond is etched by the oxygen ions with nearly the same kinetic energy by controlling the voltage of plasma by regulating the voltage applied to the metal grid.
Claim 4
Dependent Claim
140 words
Etching method for etching diamond with oxygen plasma in a reactive etching apparatus having two electrodes, a gas inlet, a gas outlet and a vacuum pump, comprising the steps of mounting a diamond specimen on one electrode, rotating the electrode supporting the diamond specimen around a vertical axis, introducing an etching gas including oxygen, activating the etching gas into plasma including oxygen ions by applying AC voltage or DC voltage between two electrodes and etching the surface of the diamond specimen by bombarding oxygen ions, characterized in that a metal grid with holes is installed between the plasma and the diamond specimen, some voltage is applied to the metal grid and the diamond is etched by the oxygen ions with nearly the same kinetic energy by controlling the voltage of plasma by regulating the voltage applied to the metal grid.
Claim 5
Dependent Claim
122 words
Etching method for etching diamond with oxygen plasma in a reactive etching apparatus having two electrodes, a gas inlet, a gas outlet and a vacuum pump, comprising the steps of mounting a diamond specimen on one electrode, introducing an etching gas including oxygen, activating the etching gas into plasma including oxygen ions by applying AC voltage or DC voltage between two electrodes and etching the surface of the diamond specimen by bombarding oxygen ions, characterized in that a metal grid with holes is mounted with an insulator cylinder on the electrode supporting the diamond specimen, the metal grid is naturally biased by the potential of the plasma, and the diamond is etched by the oxygen ions with nearly the same kinetic energy.
Claim 6
Dependent Claim
122 words
Etching method for etching diamond with oxygen plasma in a reactive etching apparatus having two electrodes, a gas inlet, a gas outlet and a vacuum pump, comprising the steps of mounting a diamond specimen on one electrode, introducing an etching gas including oxygen, activating the etching gas into plasma including oxygen ions by applying AC voltage or DC voltage between two electrodes and etching the surface of the diamond specimen by bombarding oxygen ions, characterized in that a metal grid with holes is mounted with an insulator cylinder on the electrode supporting the diamond specimen, the metal grid is naturally biased by the potential of the plasma, and the diamond is etched by the oxygen ions with nearly the same kinetic energy.
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