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US5416353A
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Netoresistance effect element
Assignee: Toshiba Corp
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Filing: 1993-09-10
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Granted: 1995-05-16
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Expires: 2013-09-10
Abstract
Abstract A magnetoresistance effect element is prepared by successively forming one upon the other a first magnetic layer, a P- or N-type semiconductor layer, a second magnetic layer, and a magnetization fixing layer in this order on an insulating substrate. A Schottky junction is formed between the first magnetic layer and the semiconductor layer and between the semiconductor layer and the second magnetic layer. The relative angle between the magnetization direction within the first magnetic layer and the magnetization direction within the second magnetic layer is changed depending on the intensity of the magnetic field, leading to a change in the tunnel conductance.
Inventors
- 👤 Yuzo Kamiguchi
- 👤 Atsuhito Sawabe
- 👤 Masashi Sahashi
- 👤 Hitoshi Iwasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:31
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; B; B82; B82Y; B82Y10/00; B82Y25/00; G11B5/3906; G11B5/3909; H; H01; H01F; H01F10/00; H01F10/32; H01F10/324; H01F10/3254; H10; H10N; H10N50/00; H10N50/10; G11B5/3993
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
51 words
A magnetoresistance effect element, comprising a first magnetic layer, a second magnetic layer, and a P- or N-type semiconductor layer interposed between said first and second magnetic layers, wherein junctions are formed between said first magnetic layer and said semiconductor layer and between said semiconductor layer and said second magnetic layer.
Claim 2
Dependent Claim
51 words
A magnetoresistance effect element, comprising a first magnetic layer, a second magnetic layer, and a P- or N-type semiconductor layer interposed between said first and second magnetic layers, wherein junctions are formed between said first magnetic layer and said semiconductor layer and between said semiconductor layer and said second magnetic layer.
Claim 3
Dependent Claim
19 words
The magnetoresistance effect element according to claim 1, wherein said semiconductor layer has a thickness of 50 to 10,000Å.
Claim 4
Dependent Claim
19 words
The magnetoresistance effect element according to claim 2, wherein said semiconductor layer has a thickness of 200 to 10,000Å.
Claim 5
Dependent Claim
25 words
The magnetoresistance effect element according to claim 1, wherein said semiconductor layer has impurity doping amount of 10 16 to 10 20 cm -3 .
Claim 6
Dependent Claim
33 words
The magnetoresistance effect element according to claim 1, wherein a Schottky barrier is formed between the first magnetic layer and the semiconductor layer and between the second magnetic layer and the semiconductor layer.
Claim 7
Dependent Claim
33 words
The magnetoresistance effect element according to claim 1, wherein an insulating layer is formed between the first magnetic layer and the semiconductor layer and between the second magnetic layer and the semiconductor layer.
Claim 8
Dependent Claim
28 words
The magnetoresistance effect element according to claim 6, wherein said insulating layer is formed of a material selected from the group consisting of an oxide and a nitride.
Claim 9
Dependent Claim
75 words
A magnetoresistance effect element, comprising a first magnetic layer, a second magnetic layer, and a semiconductor layer interposed between said first and second magnetic layers, said semiconductor layer including a first layer of a first conductivity type and a second layer of a second conductivity type, a junction being formed therebetween, and wherein junctions are formed between said first magnetic layer and said first layer and between said second magnetic layer and said second layer.
Claim 10
Dependent Claim
75 words
A magnetoresistance effect element, comprising a first magnetic layer, a second magnetic layer, and a semiconductor layer interposed between said first and second magnetic layers, said semiconductor layer including a first layer of a first conductivity type and a second layer of a second conductivity type, a junction being formed therebetween, and wherein junctions are formed between said first magnetic layer and said first layer and between said second magnetic layer and said second layer.
Claim 11
Dependent Claim
19 words
The magnetoresistance effect element according to claim 8, wherein said semiconductor layer has a thickness of 50 to 10,000Å.
Claim 12
Dependent Claim
19 words
The magnetoresistance effect element according to claim 9, wherein said semiconductor layer has a thickness of 200 to 10,000Å.
Claim 13
Dependent Claim
31 words
The magnetoresistance effect element according to claim 8, wherein said first and second layers of said semiconductor layer have impurity doping amount of 10 16 to 10 20 cm -3 .
Claim 14
Dependent Claim
52 words
The magnetoresistance effect element according to claim 8, wherein said semiconductor layer has a third layer interposed between said first and second layers thereof, said third layer being formed of an I-type semiconductor or a doped semiconductor having an impurity concentration lower than that in each of the first and second layers.
Claim 15
Dependent Claim
73 words
The magnetoresistance effect element according to claim 8, further comprising a doped semiconductor layer having an impurity concentration higher than that in said first layer of said semiconductor layer and being interposed between said first magnetic layer and said first layer, and another doped semiconductor layer having an impurity concentration higher than that in the second layer of said semiconductor layer and being interposed between said second magnetic layer and said second layer.
Claim 16
Dependent Claim
110 words
A magnetoresistance effect element, comprising a first magnetic layer, a first semiconductor layer of a first conductivity type formed on said first magnetic layer, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer, a second magnetic layer formed on said second semiconductor layer, and a third semiconductor layer of said second conductivity type formed on said first semiconductor layer, wherein junctions are formed between said first magnetic layer and said first semiconductor layer, between said first semiconductor layer and said second semiconductor layer, between said second semiconductor layer and said second magnetic layer, and between said first semiconductor layer and said third semiconductor layer.
Claim 17
Dependent Claim
110 words
A magnetoresistance effect element, comprising a first magnetic layer, a first semiconductor layer of a first conductivity type formed on said first magnetic layer, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer, a second magnetic layer formed on said second semiconductor layer, and a third semiconductor layer of said second conductivity type formed on said first semiconductor layer, wherein junctions are formed between said first magnetic layer and said first semiconductor layer, between said first semiconductor layer and said second semiconductor layer, between said second semiconductor layer and said second magnetic layer, and between said first semiconductor layer and said third semiconductor layer.
Claim 18
Dependent Claim
23 words
The magnetoresistance effect element according to claim 14, wherein the total thickness of said first and second semiconductor layers is 50 to 10,000Å.
Claim 19
Dependent Claim
23 words
The magnetoresistance effect element according to claim 15, wherein the total thickness of said first and second semiconductor layers is 200 to 10,000Å.
Claim 20
Dependent Claim
25 words
The magnetoresistance effect element according to claim 14, wherein said semiconductor layers have impurity doping amount of 10 16 to 10 20 cm -3 .
Claim 21
Dependent Claim
52 words
The magnetoresistance effect element according to claim 14, further comprising a fourth semiconductor layer interposed between said first and second semiconductor layers, said fourth semiconductor layer being formed of an I-type semiconductor or a doped semiconductor having an impurity concentration lower than that in each of the first and second semiconductor layers.
Claim 22
Dependent Claim
69 words
The magnetoresistance effect element according to claim 14, further comprising a doped semiconductor layer having an impurity concentration higher than that in the first semiconductor layer and being interposed between said first magnetic layer and said first semiconductor layer, and another doped semiconductor layer having an impurity concentration higher than that in the second semiconductor layer and being interposed between said second magnetic layer and said second semiconductor layer.
References Cited (Backward Citations)
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