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US5415719A Expired / Lapsed US ⏱️ 0.0 years remaining

Two parallel plate electrode type dry etching apparatus

Assignee: Renesas Electronics Corp
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Filing: 1993-10-07
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Granted: 1995-05-16
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Expires: 2013-10-07
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Abstract

Abstract In a plasma generating chamber, two parallel plate type electrodes are provided, and a dielectric line member is mounted on one of the electrodes. The dielectric line member is connected to a microwave oscillator, to generate gas plasma uniformly in the plasma generating chamber. A high frequency bias power supply source is connected to the other electrode.

Inventors

  • 👤 Takeshi Akimoto

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 04:12
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32541; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/32238; H01J37/3266; H01J37/32669; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; Y; Y10; Y10T; Y10T156/00; Y10T156/17; Y10T156/1798

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 117 words
A dry etching apparatus comprising: a plasma generating chamber; a first electrode mounted within said plasma generating chamber; a second electrode mounted within said plasma generating chamber and opposing said first electrode, for mounting a substrate to be etched, a microwave oscillator; a waveguide connected to said microwave oscillator; a dielectric line member, connected by an end thereof directly to said waveguide and mounted on said first electrode, for introducing microwaves into said plasma generating chamber from a microwave emission surface of said dielectric line member, said dielectric line member being arranged in parallel with a propagation direction of microwaves propagated from said waveguide; and a high frequency bias power supply source connected to said second electrode.
Claim 2
Dependent Claim 117 words
A dry etching apparatus comprising: a plasma generating chamber; a first electrode mounted within said plasma generating chamber; a second electrode mounted within said plasma generating chamber and opposing said first electrode, for mounting a substrate to be etched, a microwave oscillator; a waveguide connected to said microwave oscillator; a dielectric line member, connected by an end thereof directly to said waveguide and mounted on said first electrode, for introducing microwaves into said plasma generating chamber from a microwave emission surface of said dielectric line member, said dielectric line member being arranged in parallel with a propagation direction of microwaves propagated from said waveguide; and a high frequency bias power supply source connected to said second electrode.
Claim 3
Dependent Claim 18 words
An apparatus as set forth in claim 1, wherein said dielectric line member is of a plate type.
Claim 4
Dependent Claim 31 words
An apparatus as set forth in claim 1, wherein said first electrode is of a plate type located between a surface of said plasma generating chamber and said dielectric line member.
Claim 5
Dependent Claim 44 words
An apparatus as set forth in claim 1, wherein said first electrode is of a plate type located on the side of the plasma emission surface of said dielectric line member, said first electrode having a plurality of slits for passing the microwaves therethrough.
Claim 6
Dependent Claim 18 words
An apparatus as set forth in claim 4, wherein the slits of said first electrode are nonequidistant stripes.
Claim 7
Dependent Claim 18 words
An apparatus as set forth in claim 4, wherein the slits of said first electrode are concentric rectangles.
Claim 8
Dependent Claim 18 words
An apparatus as set forth in claim 4, wherein the slits of said first electrode are concentric circles.
Claim 9
Dependent Claim 40 words
An apparatus as set forth in claim 4, wherein an area of each of the slits of said first electrode is dependent upon an electric field of said dielectric line member at a location of said each of the slits.
Claim 10
Dependent Claim 22 words
An apparatus as set forth in claim 1, further comprising a plurality of magnets equidistantly mounted outside of said plasma generating chamber.

References Cited (Backward Citations)

US4776918A Cited
US5034086A Cited
JPH02132827A Cited
US5162633A Cited
JPH02141576A Cited
US5203960A Cited
US5173641A Cited
EP0477906A2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-05-15 1998-11-14 1999-05-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-05-15 2002-11-14 2003-05-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-05-15 2006-11-14 2007-05-16 $7700.00 Window Closed / Lapsed

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