Patent US5413360A successfully refreshed from Google Patents.
US5413360A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrostatic chuck
Assignee: Kyocera Corp
•
Filing: 1993-12-01
•
Granted: 1995-05-09
•
Expires: 2013-12-01
Abstract
Abstract An electrostatic chuck comprising a chucking body of a dielectric ceramics and an electrostatic inner electrode embedded in the chuck (first invention), the ceramics having a volume resistivity value not more than 1013 OMEGA cm at a high temperature not less than 250 DEG C. This electrostatic chuck can properly chuck, fix, carry and correct wafers even at a high temperature not less than 250 DEG C. in CVD, PVD or high temperature etching apparatuses. An electrostatic chuck comprising a chucking body of a single-crystalline sapphire and an electrostatic inner electrode embedded in the chuck (second invention). This electrostatic chuck is characterized by extremely small leak current, high mechanical strength and strong chucking force even in the temperature range of room temperature to 500 DEG C. and in the voltage range of 500 to 2000 V. With this electrostatic chuck, objects to be chucked, such as silicon wafers, are less contaminated.
Inventors
- 👤 Hitoshi Atari
- 👤 Kazuhiro Kuchimachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:38
CPC Classifications
B; B23; B23Q; B23Q3/00; B23Q3/15; Y; Y10; Y10T; Y10T279/00; Y10T279/23
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
57 words
An electrostatic chuck, comprising: a chuck body for generating a chucking force by means of minimal leak current, the chuck body comprising dielectric ceramic having a volume resistivity value not greater than approximately 10 13 Ωcm at a high temperature of not less than approximately 250° C., and an electrostatic inner electrode embedded in the chuck body.
Claim 2
Dependent Claim
57 words
An electrostatic chuck, comprising: a chuck body for generating a chucking force by means of minimal leak current, the chuck body comprising dielectric ceramic having a volume resistivity value not greater than approximately 10 13 Ωcm at a high temperature of not less than approximately 250° C., and an electrostatic inner electrode embedded in the chuck body.
Claim 3
Dependent Claim
22 words
The electrostatic chuck of claim 1, wherein the dielectric ceramic has a volume resistivity value not less than approximately 10 8 Ωcm.
Claim 4
Dependent Claim
29 words
The electrostatic chuck of claim 1, wherein the dielectric ceramic comprises a material selected from the group consisting of polycrystalline alumina ceramic, aluminum nitride ceramic and silicon nitride ceramic.
Claim 5
Dependent Claim
109 words
An electrostatic chuck, comprising: a chuck body of dielectric ceramic, and an electrostatic inner electrode embedded in the chuck body, the dielectric ceramic having a volume resistivity value not greater than approximately 10 13 Ωcm at a high temperature of not less than approximately 250° C., the dielectric ceramic comprising a material selected from the group consisting of polycrystalline alumina ceramic, aluminum nitride ceramic and silicon nitride ceramic, the dielectric ceramic comprising approximately 85 weight % of at least one of alumina, aluminum nitride and silicon nitride as a main ingredient and comprising not more than approximately 0.2 weight % of impurities other than aluminum, silicon, oxygen and nitrogen.
Claim 6
Dependent Claim
109 words
An electrostatic chuck, comprising: a chuck body of dielectric ceramic, and an electrostatic inner electrode embedded in the chuck body, the dielectric ceramic having a volume resistivity value not greater than approximately 10 13 Ωcm at a high temperature of not less than approximately 250° C., the dielectric ceramic comprising a material selected from the group consisting of polycrystalline alumina ceramic, aluminum nitride ceramic and silicon nitride ceramic, the dielectric ceramic comprising approximately 85 weight % of at least one of alumina, aluminum nitride and silicon nitride as a main ingredient and comprising not more than approximately 0.2 weight % of impurities other than aluminum, silicon, oxygen and nitrogen.
Claim 7
Dependent Claim
62 words
An electrostatic chuck, comprising: a chuck body comprising a single-crystalline sapphire plate having a first surface and a second surface, the first surface of the sapphire plate forming a chucking surface having a surface roughness of not more than 0.8 S, a dielectric plate, and an electrostatic inner electrode for coupling the dielectric plate with the second surface of the sapphire plate.
Claim 8
Dependent Claim
62 words
An electrostatic chuck, comprising: a chuck body comprising a single-crystalline sapphire plate having a first surface and a second surface, the first surface of the sapphire plate forming a chucking surface having a surface roughness of not more than 0.8 S, a dielectric plate, and an electrostatic inner electrode for coupling the dielectric plate with the second surface of the sapphire plate.
Claim 9
Dependent Claim
21 words
The electrostatic chuck of claim 5, wherein the single-crystalline sapphire is formed in accordance with the Edge-defined Film-fed Growth (EFG) method.
Claim 10
Dependent Claim
25 words
The electrostatic chuck of claim 5, wherein the electrostatic inner electrode comprises at least one of a unipolar type electrode and a bipolar type electrode.
Claim 11
Dependent Claim
81 words
An electrostatic chuck for at least one of fixing and carrying semiconductor wafers at a high temperature of not less than approximately 250° C., the electrostatic chuck comprising: a chuck body for generating a chucking force by means of minimal leak current, the chuck body comprising dielectric ceramic having a volume resistivity value not greater than approximately 10 13 Ωcm at a high temperature of not less than approximately 250° C., and an electrostatic inner electrode embedded in the chuck body.
Claim 12
Dependent Claim
81 words
An electrostatic chuck for at least one of fixing and carrying semiconductor wafers at a high temperature of not less than approximately 250° C., the electrostatic chuck comprising: a chuck body for generating a chucking force by means of minimal leak current, the chuck body comprising dielectric ceramic having a volume resistivity value not greater than approximately 10 13 Ωcm at a high temperature of not less than approximately 250° C., and an electrostatic inner electrode embedded in the chuck body.
Claim 13
Dependent Claim
29 words
The electrostatic chuck of claim 8, wherein the dielectric ceramic comprises a material selected from the group consisting of polycrystalline alumina ceramic, aluminum nitride ceramic and silicon nitride ceramic.
Claim 14
Dependent Claim
92 words
An electrostatic chuck for at least one of fixing and carrying semiconductor wafers under a vacuum processing condition at a temperature ranging from approximately room temperature to approximately 500° C., the electrostatic chuck comprising: a chuck body comprising a single-crystalline sapphire plate having a first surface and a second surface, the first surface of the sapphire plate forming a chucking surface having a surface roughness of not more than 0.8 S, a dielectric plate, and an electrostatic inner electrode for coupling the dielectric plate with the second surface of the sapphire plate.
Claim 15
Dependent Claim
92 words
An electrostatic chuck for at least one of fixing and carrying semiconductor wafers under a vacuum processing condition at a temperature ranging from approximately room temperature to approximately 500° C., the electrostatic chuck comprising: a chuck body comprising a single-crystalline sapphire plate having a first surface and a second surface, the first surface of the sapphire plate forming a chucking surface having a surface roughness of not more than 0.8 S, a dielectric plate, and an electrostatic inner electrode for coupling the dielectric plate with the second surface of the sapphire plate.
Claim 16
Dependent Claim
22 words
The electrostatic chuck of claim 10, wherein the processing condition comprises a high voltage ranging from approximately 500 V to 2000 V.
Claim 17
Dependent Claim
42 words
An electrostatic chuck according to any of claims 8 through 11, wherein the processing condition is a wafer processing condition selected from the group consisting of those for lithographic electron beam drawing, dry etching, chemical vapor deposition and physical vapor deposition methods.
References Cited (Backward Citations)
US4431473A
Cited
US4908074A
Cited
JPS6395644A
Cited
US5103367A
Cited
US5104834A
Cited
US5151845A
Cited
US5208156A
Cited
JPH04304941A
Cited
JPH0530494A
Cited
US5207437A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-05-08 | 1998-11-07 | 1999-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-05-08 | 2002-11-07 | 2003-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-05-08 | 2006-11-07 | 2007-05-09 | $7700.00 | Window Closed / Lapsed |