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US5412263A Expired / Lapsed US ⏱️ 0.0 years remaining

Multiple control voltage generation for MOSFET resistors

Assignee: AT&T Inc
•
Filing: 1992-09-30
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Granted: 1995-05-02
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Expires: 2012-09-30
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Abstract

Abstract Control voltages are generated so that each transistor in a plurality of parallel connected field effect transistors turns ON with smooth transitions between transistors and in a manner that is relatively insensitive to processing and operating temperature variations.

Inventors

  • 👤 Krishnaswamy Nagaraj
  • 👤 Reza S. Shariatdoust

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 16:29
CPC Classifications
H; H03; H03K; H03K5/00; H03K5/13; H03K5/133; H03K5/134; H03H; H03H11/00; H03H11/02; H03H11/24; H03H11/245

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 126 words
A variable resistor comprising: a plurality of first parallel connected field effect transistors, each having a gate electrode, the resistance of said resistor being the source/drain resistances of said transistors; means for generating analog control voltages for each of said first field effect transistors, said means comprising a plurality of second field effect transistors, current carrying elments connected between source electrodes of said second field effect transistors and a reference potential, said source electrodes of transistors of said second plurality being connected to said gate electrodes of transistors of said first plurality; a current transfer circuit, at least one of said second transistors having a source electrode connected to said current transfer circuit; and means for generating a reference voltage connected to said current transfer circuit.
Claim 2
Dependent Claim 126 words
A variable resistor comprising: a plurality of first parallel connected field effect transistors, each having a gate electrode, the resistance of said resistor being the source/drain resistances of said transistors; means for generating analog control voltages for each of said first field effect transistors, said means comprising a plurality of second field effect transistors, current carrying elments connected between source electrodes of said second field effect transistors and a reference potential, said source electrodes of transistors of said second plurality being connected to said gate electrodes of transistors of said first plurality; a current transfer circuit, at least one of said second transistors having a source electrode connected to said current transfer circuit; and means for generating a reference voltage connected to said current transfer circuit.
Claim 3
Dependent Claim 17 words
A variable resistor as recited in claim 1 in which said current carrying element comprises a resistance.
Claim 4
Dependent Claim 29 words
A variable resistor as recited in claim 2 in which said means for generating provides a smooth turn-on transition for said plurality of first parallel connected field effect transistor.
Claim 5
Dependent Claim 126 words
An integrated circuit comprising: a plurality of first parallel connected field effect transistors, each having a gate electrode, the resistance of said resistor being the source/drain resistances of said transistors; means for generating analog control voltages for each of said first field effect transistors, said means comprising a plurality of second field effect transistors, current carrying elements connected between a source electrodes of said second field effect transistors, and a reference potential, said source electrodes of transistors of said second plurality being connected to said gate electrodes of transistors of said first plurality; a current transfer circuit, at least one of said transistors having a source electrode connected to said current transfer circuit; and means for generating a reference voltage connected to said current transfer circuit.
Claim 6
Dependent Claim 126 words
An integrated circuit comprising: a plurality of first parallel connected field effect transistors, each having a gate electrode, the resistance of said resistor being the source/drain resistances of said transistors; means for generating analog control voltages for each of said first field effect transistors, said means comprising a plurality of second field effect transistors, current carrying elements connected between a source electrodes of said second field effect transistors, and a reference potential, said source electrodes of transistors of said second plurality being connected to said gate electrodes of transistors of said first plurality; a current transfer circuit, at least one of said transistors having a source electrode connected to said current transfer circuit; and means for generating a reference voltage connected to said current transfer circuit.
Claim 7
Dependent Claim 17 words
An integrated circuit as recited in claim 4 in which said current carrying element comprises a resistance.
Claim 8
Dependent Claim 29 words
An integrated circuit as recited in claim 4 in which said means for generating provides a smooth turn-on transistion for said plurality of first parallel connected field effect transistors.

References Cited (Backward Citations)

US4028562A Cited
US5185540A Cited
US5359301A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-05-01 1998-10-31 1999-05-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-05-01 2002-10-31 2003-05-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-05-01 2006-10-31 2007-05-02 $7700.00 Window Closed / Lapsed

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