US5409852A
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Method of Manufacturing three dimensional integrated device and circuit structures
Assignee: International Business Machines Corp
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Filing: 1993-07-21
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Granted: 1995-04-25
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Expires: 2013-07-21
Abstract
Abstract A set of three-dimensional structures and devices may be wired together to perform a wide variety of circuit functions such as SRAMs, DRAMs, ROMs and PLAs. Both N-Channel and P-Channel transistors can be made. The P-channel devices are fabricated conventionally in separate N-wells or, alteratively, they are constructed in a like manner to the array N-channel devices. N and P diffused wire can be electrically joined at polysilicon contacts.
Inventors
- 👤 Thomas B. Faure
- 👤 Bernard S. Meyerson
- 👤 Wilbur D. Pricer
- 👤 Cecilia C. Smolinski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:31
CPC Classifications
H; H10; H10D; H10D88/00
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
82 words
A method of making a three-dimensional semiconductor structure on a planar surface of a substrate comprising the step of: epitaxially growing a plurality of layers of alternating conductivity types on said planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each said intermediate layer having a substantially higher conductivity than said groups of layers, each of said groups of layers defining different areas in which semiconductor devices may be formed.
Claim 2
Independent Claim
82 words
A method of making a three-dimensional semiconductor structure on a planar surface of a substrate comprising the step of: epitaxially growing a plurality of layers of alternating conductivity types on said planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each said intermediate layer having a substantially higher conductivity than said groups of layers, each of said groups of layers defining different areas in which semiconductor devices may be formed.
Claim 3
Dependent Claim
25 words
The method according to claim 1, further comprising a step of selectively wet chemically etching portions of one of said layers of alternating conductivity types.
Claim 4
Dependent Claim
23 words
The method according to claim 1, wherein said intermediate layer comprises a layer more heavily doped than said layers of alternating conductivity types.
Claim 5
Dependent Claim
32 words
The method according to claim 1, further comprising a step of oxidizing said intermediate layer to produce an oxidized intermediate layer, said oxidized intermediate layer being an insulated ground plane for isolation.
Claim 6
Dependent Claim
65 words
The method according to claim 1, further comprising a step of forming a plurality of oxide filled trenches extending from a first surface of said structure and intersecting said at least two groups of three layers of alternating conductivity types, and etching back at least some of said layers substantially perpendicular to said plurality of oxide filled trenches and filling etched back volumes with oxide.
Claim 7
Dependent Claim
42 words
The method of making a three-dimensional semiconductor structure recited in claim 1 further comprising the step of: depositing a plurality of masking layers over said epitaxial layers, each of said masking layers being selectively etchable with respect to its immediately adjacent neighbor.
Claim 8
Dependent Claim
24 words
The method according to claim 1, further comprising a step of forming said intermediate layer such that said intermediate layer comprises a semiconductor material.
Claim 9
Dependent Claim
33 words
The method according to claim 1, further comprising a step of using at least one mask, applied after epitaxially growing all of said plurality of layers, to define features of said semiconductor devices.
Claim 10
Independent Claim
134 words
A method of making a three-dimensional semiconductor structure comprising the steps of: epitaxially growing a plurality of layers of alternating conductivity types on said a planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each said intermediate layer having a substantially higher conductivity than said groups of layers, each of said groups of layers defining different areas in which semiconductor devices may be formed; depositing a thin oxide layer over a first layer of said epitaxially grown layers; depositing a nitride layer over said thin oxide layer; depositing a silicon layer over said nitride layer; depositing a second oxide layer over said silicon layer; applying a first photoresist mask over said second oxide layer; and reactive ion etching said second oxide layer.
Claim 11
Independent Claim
134 words
A method of making a three-dimensional semiconductor structure comprising the steps of: epitaxially growing a plurality of layers of alternating conductivity types on said a planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each said intermediate layer having a substantially higher conductivity than said groups of layers, each of said groups of layers defining different areas in which semiconductor devices may be formed; depositing a thin oxide layer over a first layer of said epitaxially grown layers; depositing a nitride layer over said thin oxide layer; depositing a silicon layer over said nitride layer; depositing a second oxide layer over said silicon layer; applying a first photoresist mask over said second oxide layer; and reactive ion etching said second oxide layer.
Claim 12
Dependent Claim
77 words
The method of making a three-dimensional semiconductor structure recited in claim 9 wherein a plurality of trenches orthogonal to the planar surface of said substrate are formed in said epitaxial layers, said method further comprising the steps of: stripping said first photoresist mask after said second oxide layer has been etched; and anisotropically etching trenches in said plurality of layers orthogonal to said planar surface of said substrate using said etched second oxide layer as a mask.
Claim 13
Dependent Claim
68 words
The method of making a three-dimensional semiconductor structure recited in claim 10 further comprising the steps of: depositing a first doped oxide having a first dopant level in said trenches; depositing a second doped oxide having a second dopant level greater than said first dopant level; planarizing the resultant structure by etching to said silicon layer; and depositing a third layer of oxide over the exposed silicon layer.
Claim 14
Dependent Claim
117 words
The method of making a three-dimensional semiconductor structure recited in claim 11 wherein oxide isolation structures are formed in said resultant structure, said method further comprising the steps of: applying a second photoresist mask over said third layer of oxide; anisotropically etching said third layer of oxide to said silicon layer to expose selected trenches; stripping said second photoresist mask; anisotropically etching said silicon, nitride, and oxide layers and removing silicon between said exposed trenches using said first and second doped oxides as an etch stop; depositing an oxide in areas opened between said exposed trenches to form said oxide isolation structures; planarizing said structure by etching to said nitride layer; and depositing a second nitride layer.
Claim 15
Dependent Claim
39 words
The method of making a three-dimensional semiconductor structure recited in claim 12, further comprising the step of cleaning said exposed trenches with a Nitric/HF dip before depositing the areas opened between oxide in areas opened between said exposed trenches.
Claim 16
Dependent Claim
113 words
The method of making a three-dimensional semiconductor structure recited in claim 11 wherein a comb isolation structure is formed in said semiconductor structure further comprising the steps of: applying a third photoresist mask over said second nitride layer; etching said second nitride layer to expose selected trenches; stripping said third photoresist mask; wet etching to remove said first and second doped oxides in exposed trenches; electrochemically etching selected regions of layers of a first conductivity type exposed in said exposed trenches; depositing an oxide in said exposed trenches after said step of electrochemically etching to form said comb isolation structure; and planarizing said the resultant structure by etching to said second nitride layer.
Claim 17
Dependent Claim
33 words
The method of making a three-dimensional semiconductor structure recited in claim 14 further comprising the step of cleaning said exposed trenches with a Nitric/HF dip before depositing the oxide in said exposed trenches.
Claim 18
Dependent Claim
138 words
The method of making a three-dimensional semiconductor structure recited in claim 14 wherein a gate structure is formed in said resultant structure further comprising the steps of: applying a fourth photoresist mask to said second nitride layer; etching said second nitride layer to expose selected trenches; stripping said fourth photoresist mask; wet etching to remove said first and second doped oxides in exposed trenches; electrochemically etching selected regions of layers of a first conductivity type exposed in said trenches; growing a thin thermal oxide on surfaces exposed by said step of electrochemically etching; depositing a first doped polysilicon within said trenches leaving an open center core which, combined with said thin thermal oxide, forms said gate structure; depositing a second doped oxide within said center core; and planarizing the resultant structure by etching to said second nitride layer.
Claim 19
Dependent Claim
32 words
The method of making a three-dimensional semiconductor structure recited in claim 16 further comprising the step of cleaning said trenches with a Nitric/IF dip before growing the thermal oxide in said trenches.
Claim 20
Dependent Claim
113 words
The method of making a three-dimensional semiconductor structure recited in claim 11 wherein a dielectric via is formed within said resultant structure further comprising the steps of: depositing a polysilicon layer over said resultant structure; applying a fifth photoresist mask over said polysilicon layer; anisotropically etching said polysilicon layer to expose selected trenches; stripping said fifth photoresist mask; wet etching to remove said second doped oxide in exposed trenches; performing a timed etch to remove polysilicon in a core area of exposed trenches and simultaneously removing said polysilicon layer; depositing a dielectric within said core area of said opened trenches; and planarizing said the resultant structure by etching to said second nitride layer.
Claim 21
Dependent Claim
115 words
The method of making a three-dimensional semiconductor structure recited in claim 18 wherein a buried contact is formed in said resultant structure further comprising the steps of: applying a sixth photoresist mask over said nitride layer; reactive ion etching said nitride layer to expose a selected trench; stripping said sixth photoresist mask; wet etching to remove said first and second doped oxides within the exposed trench; depositing doped polysilicon to fill a core within the trench and then wet etching the deposited doped polysilicon to leave only a buried contact; depositing an oxide to fill the trench; planarizing the structure by etching to third nitride layer; and wet etching to remove said third nitride layer.
Claim 22
Dependent Claim
67 words
The method of making a three-dimensional semiconductor structure recited in claim 19 wherein a wiring pattern is formed further comprising the steps of: depositing a polysilicon layer over said resultant structure; doping the deposited polysilicon layer; applying a seventh photoresist mask over the doped polysilicon layer; anisotropically etching said doped polysilicon layer for form said wiring pattern; and depositing an oxide over the etched doped polysilicon layer.
Claim 23
Independent Claim
234 words
A method of making a three-dimensional semiconductor structure comprising the step of: epitaxially growing a plurality of layers of alternating conductivity types on said a planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each said intermediate layer having a substantially higher conductivity than said groups of layers, each of said groups of layers defining different areas in which semiconductor devices may be formed, said method further comprising the steps of: forming first trench regions in said plurality of layers orthogonal to the planar surface of said substrate; selectively etching at least portions of layers of a first conductivity type exposed in said first trench regions while applying a voltage bias to said substrate thereby defining semiconductor devices; filling said first trench-like regions with an oxide; forming second trench regions in said plurality of layers orthogonal to the planar surface of said substrate; filling said second trench regions with a doped oxide to form diffused wiring in exposed portions of layers of a second conductivity type; forming third trench regions in said plurality of layers orthogonal to the planar surface of said substrate to define coupling regions; and forming a conductive material within said coupling regions to enable semiconductor device structures within groups of layers to communicate with semiconductor device structures within other groups of layers and outside of said semiconductor structure.
Claim 24
Independent Claim
234 words
A method of making a three-dimensional semiconductor structure comprising the step of: epitaxially growing a plurality of layers of alternating conductivity types on said a planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each said intermediate layer having a substantially higher conductivity than said groups of layers, each of said groups of layers defining different areas in which semiconductor devices may be formed, said method further comprising the steps of: forming first trench regions in said plurality of layers orthogonal to the planar surface of said substrate; selectively etching at least portions of layers of a first conductivity type exposed in said first trench regions while applying a voltage bias to said substrate thereby defining semiconductor devices; filling said first trench-like regions with an oxide; forming second trench regions in said plurality of layers orthogonal to the planar surface of said substrate; filling said second trench regions with a doped oxide to form diffused wiring in exposed portions of layers of a second conductivity type; forming third trench regions in said plurality of layers orthogonal to the planar surface of said substrate to define coupling regions; and forming a conductive material within said coupling regions to enable semiconductor device structures within groups of layers to communicate with semiconductor device structures within other groups of layers and outside of said semiconductor structure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-24 | 1998-10-24 | 1999-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-24 | 2002-10-24 | 2003-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-24 | 2006-10-24 | 2007-04-25 | $7700.00 | Window Closed / Lapsed |