Thermoelectric cooling device for thermoelectric refrigerator, process for the fabrication of semiconductor suitable for use in the thermoelectric cooling device, and thermoelectric refrigerator using the thermoelectric cooling device

Claim 2

A thermoelectric cooling device for a thermoelectric refrigerator, said device being composed of: a number of p-type semiconductor layers and n-type semiconductor layers arranged side by side, a first inner heat conductor having heat-absorbing-side electrodes disposed outside heat-absorbing-side ends of the p-type and n-type semiconductor layers, a first outer heat conductor disposed outside the first inner heat conductor, a second inner heat conductor having heat-dissipating-side electrodes disposed outside heat-dissipating-side ends of the p-type and n-type semiconductor layers, and a second outer heat conductor disposed outside the second inner heat conductor, said p-type semiconductor layers and said n-type semiconductor layers being electrically connected in alternating series via said heat-absorbing-side electrodes and said heat-dissipating-side electrodes, wherein said p-type semiconductor layers and n-type semiconductor layers have an average thickness of at least 0.08 but greater than 0 cm, and the average figures of merit of said p-type semiconductor layers and n-type semiconductor layers are controlled at 2.7×10 -3 /k or above, the thermal conductance of said first inner heat conductor within a range of 8-20 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said first outer heat conductor within a range of 3-10 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said second inner heat conductor within a range of 8-20 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, and the thermal conductance (of said second outer heat conductor within a range of 3-10 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, whereby the coefficient of performance defined in terms of the ratio of the quantity of absorbed heat to inputted power is at least 0.6.

Claim 3

A device of claim 1, wherein said p-type semiconductor layers and n-type semiconductor layers have an average thickness of from 0.08 to 0.15 cm and the average figures of merit of said p-type semiconductors and n-type semiconductors are controlled within a range of from 2.7×10 -3 to 3.5×10 -3 /K.

Claim 4

A thermoelectric cooling device for a thermoelectric refrigerator, said device being composed of: a number of p-type semiconductor layers and n-type semiconductor layers arranged side by side, a first inner heat conductor having heat-absorbing-side electrodes disposed outside heat-absorbing-side ends of the p-type and n-type semiconductor layers, a first outer heat conductor disposed outside the first inner heat conductor, a second inner heat conductor having heat-dissipating-side electrodes disposed outside heat-dissipating-side ends of the p-type and n-type semiconductor layers, and a second outer heat conductor disposed outside the second inner heat conductor, said p-type semiconductor layers and said n-type semiconductor layers being electrically connected in alternating series via said heat-absorbing-side electrodes and said heat-dissipating-side electrodes, wherein said p-type semiconductor layers and n-type semiconductor layers have an average thickness smaller than 0.08 cm but greater than 0 cm, and the average figures of merit of said p-type semiconductor layers and n-type semiconductor layers are controlled at 3.0×10 -3 /K or above, the thermal conductance of said first inner heat conductor within a range of 8-20 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said first outer heat conductor within a range of 7-10 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said second inner heat conductor within a range of 8-20 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, and the thermal conductance of said second outer heat conductor within a range of 7-10 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, whereby the coefficient of performance defined in terms of the ratio of the quantity J Q of absorbed heat to inputted power is at least 0.6.

Claim 5

A thermoelectric cooling device for a thermoelectric refrigerator, said device being composed of: a number of p-type semiconductor layers and n-type semiconductor layers arranged side by side, a first inner heat conductor having heat-absorbing-side electrodes disposed outside heat-absorbing-side ends of the p-type and n-type semiconductor layers, a first outer heat conductor disposed outside the first inner heat conductor, a second inner heat conductor having heat-dissipating-side electrodes disposed outside heat-dissipating-side ends of the p-type and n-type semiconductor layers, and a second outer heat conductor disposed outside the second inner heat conductor, said p-type semiconductor layers and said n-type semiconductor layers being electrically connected in alternating series via said heat-absorbing-side electrodes and said heat-dissipating-side electrodes, wherein said p-type semiconductor layers and n-type semiconductor layers have an average thickness smaller than 0.08 cm but greater than 0 cm, and the average figures of merit of said p-type semiconductor layers and n-type semiconductor layers are controlled at 3.0×10 -3 /K or above, the thermal conductance of said first inner heat conductor within a range of 8-20 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said first outer heat conductor within a range of 7-10 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, the thermal conductance of said second inner heat conductor within a range of 8-20 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, and the thermal conductance of said second outer heat conductor within a range of 7-10 w/°C.cm 2 of the cross-sectional area of both the p-type and n-type semiconductor layers, whereby the coefficient of performance defined in terms of the ratio of the quantity J Q of absorbed heat to inputted power is at least 0.6.

Claim 6

A device of claim 3, wherein said p-type semiconductor layers and n-type semiconductor layers have an average thickness t of at least 0.03 but smaller than 0.08 cm and the average figures of merit of said p-type semiconductors and n-type semiconductors is controlled within a range of from 3.0×10 -3 to 3.5×10 -3 /K.

Claim 9

A device of claim 1, wherein said first and second outer heat conductors are provided with fins and fans for effecting forced air cooling against the fins.

Claim 10

A device of claim 7, wherein said fins are heat pipe fins.

Claim 11

A device of claim 1, wherein said second outer heat conductor is formed of heat pipes and a fan is arranged to effect forced air cooling against heat-dissipating portions of said heat pipes.

Claim 12

A process for the fabrication of a semiconductor suitable for use in a thermoelectric cooling device of claim 1 or 3 for a thermoelectric refrigerator, which comprises: sintering a granulated ceramic mix for the semiconductor while applying a predetermined voltage across the granulated ceramic mix to produce a plasma discharge between particles of the granulated ceramic mix and hence activating surfaces of the particles and eliminating deposited oxides and adsorbed gas from the surfaces of the particles.

Claim 13

A thermoelectric refrigerator comprising a thermoelectric cooling device of claim 1 or 3, wherein said first inner heat conductor and said first outer heat conductor are arranged inside a cabinet of the refrigerator, said second inner heat conductor and said second outer heat conductor are arranged outside the cabinet of the refrigerator, and at least said second outer heat conductor is provided with a fan for effecting forced air cooling against said second outer heat conductor.