Patent US5406332A successfully refreshed from Google Patents.
US5406332A
Expired / Lapsed
US
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Photoelectric converting device
Assignee: Canon Inc
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Filing: 1993-03-04
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Granted: 1995-04-11
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Expires: 2013-03-04
Abstract
Abstract A photoelectric converting device is provided with a control electrode area consisting of a semiconductor of a first conductive type, first and second main electrode areas consisting of a semiconductor of a second conductive type different from the first conductive type, and a drive line capacitively coupled to the control electrode area for controlling the potential thereof, and adapted to read a signal from the first main electrode area, by the potential control of the control electrode area, based on a charge generated by an incident light energy and accumulated in the control electrode area. The potentials of the first main electrode areas and of the drive line are elevated during the light signal accumulating operation to elevate the potential of the control electrode area, thereby rendering the potential difference between the control electrode area and the second main electrode area smaller than at the end of charge resetting of the control electrode area.
Inventors
- 👤 Mahito Shinohara
- 👤 Isamu Ueno
- 👤 Hidekazu Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:35
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/60; H04N25/62; H04N25/621; H04N25/63; H04N25/67; H04N25/70; H04N25/76; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
207 words
A photoelectric converting device provided with a transistor comprising a control electrode region of a first conductivity type semiconductor material, and first and second main electrode regions of a second, different conductivity type semiconductor material, said photoelectric converting device for performing a storage operation to store photocarriers in the control electrode region, for reading out a signal from the first main electrode region and for resetting a potential at the control electrode region, said photoelectric converting device comprising: a first switching means for applying a first power supply voltage to an output line, the said first power supply voltage being a first reference potential and being applied to the first main electrode region during the storage operation; and a second switching means for applying, simultaneously with the application of the first reference potential to the first main electrode by said first switching means, a second power supply voltage, said second power supply voltage being applied to a drive line, the said second power supply voltage being a second reference potential and being applied to the control electrode region, wherein a potential difference between said second main electrode region and said control electrode region and a potential difference between said first and second main electrode regions are reduced.
Claim 2
Dependent Claim
207 words
A photoelectric converting device provided with a transistor comprising a control electrode region of a first conductivity type semiconductor material, and first and second main electrode regions of a second, different conductivity type semiconductor material, said photoelectric converting device for performing a storage operation to store photocarriers in the control electrode region, for reading out a signal from the first main electrode region and for resetting a potential at the control electrode region, said photoelectric converting device comprising: a first switching means for applying a first power supply voltage to an output line, the said first power supply voltage being a first reference potential and being applied to the first main electrode region during the storage operation; and a second switching means for applying, simultaneously with the application of the first reference potential to the first main electrode by said first switching means, a second power supply voltage, said second power supply voltage being applied to a drive line, the said second power supply voltage being a second reference potential and being applied to the control electrode region, wherein a potential difference between said second main electrode region and said control electrode region and a potential difference between said first and second main electrode regions are reduced.
Claim 3
Dependent Claim
147 words
A photoelectric converting device provided with a plurality of photoelectric converting cells, each cell including a first semiconductor area of a first conductive type, a second semiconductor area of a second conductive type, and an electrode serving as a drive line provided in an area between at least two adjacent first semiconductor areas, said electrode adapted to receive a signal of at least three voltage levels; wherein said electrode and said at least two adjacent first semiconductor areas are self aligned such that the said electrode overlaps a substantially equal portion of at least two said adjacent first semiconductor areas to define an aligned part with each said first semiconductor area, so that an overlapping capacitance is formed by said aligned part only, and wherein the overlapping capacitance is utilized for controlling potential of said first semiconductor area so as to effect accumulation, read-out and resetting operations.
Claim 4
Dependent Claim
147 words
A photoelectric converting device provided with a plurality of photoelectric converting cells, each cell including a first semiconductor area of a first conductive type, a second semiconductor area of a second conductive type, and an electrode serving as a drive line provided in an area between at least two adjacent first semiconductor areas, said electrode adapted to receive a signal of at least three voltage levels; wherein said electrode and said at least two adjacent first semiconductor areas are self aligned such that the said electrode overlaps a substantially equal portion of at least two said adjacent first semiconductor areas to define an aligned part with each said first semiconductor area, so that an overlapping capacitance is formed by said aligned part only, and wherein the overlapping capacitance is utilized for controlling potential of said first semiconductor area so as to effect accumulation, read-out and resetting operations.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-10 | 1998-10-10 | 1999-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-10 | 2002-10-10 | 2003-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-10 | 2006-10-10 | 2007-04-11 | $7700.00 | Window Closed / Lapsed |