Abstract After a word line is formed on a semiconductor substrate, a side-wall insulating film is formed on the side faces of the word line. Subsequently, a first insulating film is deposited thereon. The resulting first insulating film is formed with an opening for a bit line, through which a bit line having an on-bit-line insulating film on its top surface is formed. Thereafter, a second insulating film is deposited thereon. An opening for a charge-storage electrode is then formed in the first and second insulating film by removing, by a specified thickness, the portions of the first insulating film, on-bit-line insulating film, and second insulating film lying in a memory cell array region, followed by the deposition of a charge-storage electrode through the opening for a charge-storage electrode.
Inventors
👤 Hisashi Ogawa
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-02 03:04
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
102 words
A semiconductor memory device comprising a word line, a bit line, and a charge-storage electrode which are formed on its semiconductor substrate, an insulating film which is formed on the top surface of said bit line, and a capacitance insulating film which is formed on said charge-storage electrode, wherein: said insulating film has a step portion which is lower in level than other portions; said charge-storage electrode is formed on the bottom surface of said step portion, leaving a space between a wall surface of said step portion and said charge-storage electrode; and said capacitance insulating film is formed in said space.
Claim 2
Dependent Claim
102 words
A semiconductor memory device comprising a word line, a bit line, and a charge-storage electrode which are formed on its semiconductor substrate, an insulating film which is formed on the top surface of said bit line, and a capacitance insulating film which is formed on said charge-storage electrode, wherein: said insulating film has a step portion which is lower in level than other portions; said charge-storage electrode is formed on the bottom surface of said step portion, leaving a space between a wall surface of said step portion and said charge-storage electrode; and said capacitance insulating film is formed in said space.