US5200635A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a low-resistivity planar wiring structure
Assignee: Micron Memory Japan Ltd
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Filing: 1991-04-17
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Granted: 1993-04-06
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Expires: 2011-04-17
Abstract
Abstract The present invention concerns a semiconductor device having a low-resistivity wiring structure. Wirings formed directly on a hill and valley structure result in a thin portion and, in an extreme case, a disconnected portion. This increases the resistivity of wirings on the hill and valley structure and lowers the reliability of the connection. In a case where the wirings are data lines of a memory, with an increased effective length, the resistance and the parasitic capacitance of the data line is greater. The above mentioned problems have been solved by wirings which comprise at least two layers of conductive film including a first conductive film as a lower layer and a second conductive film as an upper layer, and the first conductive layer has a surface moderating or planarizing the hills and valleys in the underlying material.
Inventors
- 👤 Toru Kaga
- 👤 Shinichiro Kimura
- 👤 Katsutaka Kimura
- 👤 Yoshinobu Nakagome
- 👤 Digh Hisamoto
- 👤 Yoshifumi Kawamoto
- 👤 Eiji Takeda
- 👤 Shimpei Iijima
- 👤 Tokuo Kure
- 👤 Takashi Nishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318; H10D62/00; H10D62/80; H10D62/83; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
190 words
In a dynamic random access memory (DRAM), formed at a main surface of a substrate, including word and data lines and plural memory cells each of which includes a transistor having an active region and storage capacitance, the combination wherein: each data line has a substantially orthogonally overlapping arrangement with said word lines, with respect to a plan view thereof; each said active region is disposed, with respect to said plan view, at an angle direction which is substantially different from that of the corresponding ones of said word and data lines; the data lines are disposed as lower level conductive layers than that for forming charge storage electrodes of said memory cells, said storage capacitance is characterized as including a storage capacitance portion thereof that is provided by a side wall which is directioned substantially perpendicular to that of the main surface of said substrate; and the data lines are higher level conductive layers than said word lines with respect to the main surface of said substrate, said data lines are formed insulatedly above said word lines and over further coductive layers disposed in spacings between respective word lines.
Claim 2
Dependent Claim
190 words
In a dynamic random access memory (DRAM), formed at a main surface of a substrate, including word and data lines and plural memory cells each of which includes a transistor having an active region and storage capacitance, the combination wherein: each data line has a substantially orthogonally overlapping arrangement with said word lines, with respect to a plan view thereof; each said active region is disposed, with respect to said plan view, at an angle direction which is substantially different from that of the corresponding ones of said word and data lines; the data lines are disposed as lower level conductive layers than that for forming charge storage electrodes of said memory cells, said storage capacitance is characterized as including a storage capacitance portion thereof that is provided by a side wall which is directioned substantially perpendicular to that of the main surface of said substrate; and the data lines are higher level conductive layers than said word lines with respect to the main surface of said substrate, said data lines are formed insulatedly above said word lines and over further coductive layers disposed in spacings between respective word lines.
Claim 3
Dependent Claim
20 words
A dynamic random access memory according to claim 1, wherein said further conductive layers are formed of polycrystalline silicon material.
Claim 4
Dependent Claim
31 words
A dynamic random access memory according to claim 2, wherein said transistor is an MOS transistor, said MOS transistor has a gate formed by a corresponding one of said word lines.
Claim 5
Dependent Claim
30 words
A dynamic random access memory according to claim 3, wherein said data lines have substantially planar surfaces and are comprised of a stacked layer arrangement of two different conductive films.
Claim 6
Dependent Claim
29 words
A dynamic random access memory according to claim 1, wherein the stacked layer arrangement includes a metal layer or a metal silicide layer laminated on a silicon-containing conductor layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |