Symmetrical multi-layer metal logic array with continuous substrate taps

Claim 2

An integrated circuit gate array structure comprising: a semiconductor substrate in which are located a plurality of columns of semiconductor material of a first conductivity type and a plurality of columns of semiconductor material of a second conductivity type; the substrate having one column of the first conductivity type and one column of the second conductivity type adjacent to each other to form a first column pair mirroring a next column pair such that the conductivity of a first column of the next column pair is the same as a last column of the first column pair; active areas including a plurality of contact points formed within the columns; the plurality of contact points can be connected to conductive material, thereby forming active regions; and tap regions formed outside the columns pairs, each of the tap regions being associated with two columns of two column pairs, the tap regions having an opposite conductivity as the columns to which they are adjacent and the tap region can be connected with conductive material, the tap regions being doped with an opposite material than their adjacent columns thereby allowing current and voltage characteristics of the columns to be controlled; wherein the active areas and the column pairs are placed so as to form a plurality of adjacent cells, each cell comprising a first active area within one of the columns of the first conductivity type and a second active area within one of the columns of the second conductivity type; each cell including one column pair; and wherein the column pairs are situated to allow common conductivity columns to share tap regions, the plurality of cells being mirrored in a first direction such that the arrangement of the conductivity types of the column pair of one cell is inverted in relation to the adjacent next column pair of a adjacent next cell and the plurality of cells in a second direction being identical to provide increased density of the array structure.

Claim 3

An integrated circuit gate array structure of claim 1 in which a core cell of the gate array structure comprises: a first pair of transistors within one of the columns of the first conductivity type, a second pair of transistors within one of the columns of the second conductivity type, and a substrate tap within one of the tap regions located adjacent to either the first or second pair of transistors.

Claim 4

The gate array structure of claim 1 in which the tap regions comprise strips of substrate taps that run the length of the column pairs.

Claim 5

An integrated circuit gate array structure comprising: a semiconductor substrate in which a plurality of columns of p-type semiconductor material and a plurality of columns of n-type semiconductor material, the substrate having one of the plurality of p-channel columns adjacent to an n-channel column to form a first column pair, the substrate further having a next pair of columns positioned such that the next column pair mirror the first column pair such that the conductivity of a first column of the next column pair is the same as a last column of the first column pair, active areas including a plurality of contact points formed within the columns; the contact points can be connected to conductive material, thereby forming active regions, and tap regions formed outside the column pairs, each of the tap regions being associated with two columns of two column pairs, the tap regions having the opposite conductivity as the columns to which they are adjacent to and the tap regions can be connected with conductive material, the tap regions further being heavily doped with conductive material of the opposite type than that of the column it is adjacent to, thereby allowing current and voltage characteristics of the columns to be controlled, wherein the active areas and the column pairs are placed so as to form a plurality of adjacent cells, each cell comprising of a first active area within one of the columns of the first conductivity type and a second active area within one of the columns of the second conductivity type; each cell including one column pair; and wherein the column pairs are situated to allow common conductivity columns to share tap regions, the plurality of cells being mirrored in a first direction such that the arrangement of the conductivity types of the column pair of one cell is inverted in relation to the adjacent next column pair of a adjacent next cell and the plurality of cells in a second direction being identical to provide increased density of the array structure.

Claim 6

An integrated circuit gate array structure comprising: a semiconductor substrate in which a plurality of columns of p-type semiconductor material and a plurality of columns of n-type semiconductor material, the substrate having one of the plurality of p-channel columns adjacent to an n-channel column to form a first column pair, the substrate further having a next pair of columns positioned such that the next column pair mirror the first column pair such that the conductivity of a first column of the next column pair is the same as a last column of the first column pair, active areas including a plurality of contact points formed within the columns; the contact points can be connected to conductive material, thereby forming active regions, and tap regions formed outside the column pairs, each of the tap regions being associated with two columns of two column pairs, the tap regions having the opposite conductivity as the columns to which they are adjacent to and the tap regions can be connected with conductive material, the tap regions further being heavily doped with conductive material of the opposite type than that of the column it is adjacent to, thereby allowing current and voltage characteristics of the columns to be controlled, wherein the active areas and the column pairs are placed so as to form a plurality of adjacent cells, each cell comprising of a first active area within one of the columns of the first conductivity type and a second active area within one of the columns of the second conductivity type; each cell including one column pair; and wherein the column pairs are situated to allow common conductivity columns to share tap regions, the plurality of cells being mirrored in a first direction such that the arrangement of the conductivity types of the column pair of one cell is inverted in relation to the adjacent next column pair of a adjacent next cell and the plurality of cells in a second direction being identical to provide increased density of the array structure.

Claim 7

The integrated gate array structure of claim 4 in which the tap regions comprise strips of substrate taps that run the length of the column pairs.

Claim 8

The gate array structure of claim 1 in which the first direction is horizontal and the second direction is vertical.

Claim 9

The gate array structure of claim 4 in which the first direction is horizontal and the second direction is vertical.