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US5403916A
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Method for producing a light emitting diode having transparent substrate
Assignee: Sharp Corp
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Filing: 1994-02-10
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Granted: 1995-04-04
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Expires: 2014-02-10
Abstract
Abstract A method for producing a light emitting diode includes the steps of: forming a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type; forming a light emitting layer on the first semiconductor multilayer; forming a second semiconductor multilayer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the second semiconductor multilayer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the second semiconductor multilayer.
Inventors
- 👤 Masanori Watanabe
- 👤 Haruhisa Takiguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:42
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/018
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
135 words
A method for producing a light emitting diode, the method comprising the steps of: epitaxially growing a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type, the first semiconductor multilayer including at least one first semiconductor layer having the first conductivity type; epitaxially growing a light emitting layer on the first semiconductor multilayer; epitaxially growing a second semiconductor multilayer on the light emitting layer, the second semiconductor multilayer including at least one second semiconductor layer having a second conductivity type; disposing a second substrate on the second semiconductor multilayer, the second substrate being transparent to light emitted from the light emitting layer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating the vicinity of an interface between the second substrate and the second semiconductor multilayer.
Claim 2
Independent Claim
135 words
A method for producing a light emitting diode, the method comprising the steps of: epitaxially growing a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type, the first semiconductor multilayer including at least one first semiconductor layer having the first conductivity type; epitaxially growing a light emitting layer on the first semiconductor multilayer; epitaxially growing a second semiconductor multilayer on the light emitting layer, the second semiconductor multilayer including at least one second semiconductor layer having a second conductivity type; disposing a second substrate on the second semiconductor multilayer, the second substrate being transparent to light emitted from the light emitting layer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating the vicinity of an interface between the second substrate and the second semiconductor multilayer.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein the second substrate is made of a semiconductor material having the second conductivity type.
Claim 4
Dependent Claim
27 words
A method according to claim 2, wherein the second substrate is made of at least one selected from the group consisting of GaP, ZnSe, ZnS, and SiC.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein the second substrate is made of a dielectric material.
Claim 6
Dependent Claim
36 words
A method according to claim 4, wherein the second substrate is made of at least one selected from the group consisting of Al 2 O 3 , glass, TiO 2 , MgO, and a compound thereof.
Claim 7
Dependent Claim
32 words
A method according to claim 1, wherein the bonding step is conducted by applying a pressure from the side of at least one of the first seminconductor substrate and the second substrate.
Claim 8
Dependent Claim
38 words
A method according to claim 1, wherein the disposing step is conducted in such a way that a crystal axis of the second substrate and a crystal axis of the second semiconductor multilayer are aligned with each other.
Claim 9
Dependent Claim
46 words
A method according to claim 2, wherein the second semiconductor multilayer includes a plurality of second semiconductor layers, and wherein one of the plurality of second semiconductor layers that is in contact with the second substrate has the same composition as that of the second substrate.
Claim 10
Dependent Claim
55 words
A method according to claim 1 further comprising the step of providing grooves in at least one of a face of the second semiconductor multilayer and a face of the second substrate that is in contact with the second semiconductor layer, the grooves reaching at least one edge of at least one of the faces.
Claim 11
Dependent Claim
31 words
A method according to claim 1 further comprising the step of removing at least a portion of the first semiconductor substrate after bonding the second semiconductor multilayer and the second substrate.
Claim 12
Dependent Claim
72 words
A method according to claim 10 further comprising the step of forming an etching stopper layer between the first semiconductor substrate and the first semiconductor multilayer, the etching stopper layer having the first conductivity type and having a composition different from a composition of the first semiconductor multilayer, and wherein the step of removing at least the portion of the first semiconductor substrate is performed until the etching stopper layer is exposed.
Claim 13
Dependent Claim
57 words
A method according to claim 10 further comprising the steps of: forming an electrode on a portion of a face of the first semiconductor substrate exposed after removing at least the portion of the first semiconductor substrate; and forming a reflective film on the exposed face of the first semiconductor substrate except where the electrode is formed.
Claim 14
Dependent Claim
84 words
A method according to claim 10 further comprising the steps of: forming an electrode on a portion of a face of the first semiconductor substrate exposed after removing at least the portion of the first semiconductor substrate; removing at least a portion of the first semiconductor substrate, the first semiconductor multilayer, and the light emitting layer to expose a portion of a face of the second semiconductor multilayer; and forming an electrode on the portion of the exposed face of the second semiconductor multilayer.
Claim 15
Dependent Claim
43 words
A method according to claim 1 further comprising the step of forming a dopant layer having the second conductivity type on at least one of a face of the second semiconductor multilayer and a face of the second substrate before the bonding step.
Claim 16
Dependent Claim
29 words
A method according to claim 1, wherein the heating is conducted by radiating light through the second substrate, the light having a wavelength absorbable by the second semiconductor multilayer.
Claim 17
Dependent Claim
28 words
A method according to claim 14, wherein the heating is conducted by radiating light through the second substrate, the light having a wavelength absorbable by the dopant layer.
Claim 18
Independent Claim
139 words
A method for producing a light emitting device, the method of comprising the steps of: epitaxially growing a semiconductor multilayer on a first substrate, the semiconductor multilayer including a light emitting layer, first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type, the light emitting layer being interposed between the first semiconductor layer and the second semiconductor layer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the semiconductor multilayer; bonding the second substrate and the semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the semiconductor multilayer; and removing at least part of the first substrate; and forming a pair of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively.
Claim 19
Independent Claim
139 words
A method for producing a light emitting device, the method of comprising the steps of: epitaxially growing a semiconductor multilayer on a first substrate, the semiconductor multilayer including a light emitting layer, first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type, the light emitting layer being interposed between the first semiconductor layer and the second semiconductor layer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the semiconductor multilayer; bonding the second substrate and the semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the semiconductor multilayer; and removing at least part of the first substrate; and forming a pair of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |