EP0420691A2
Expired / Lapsed
EP
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Semiconductor light-emitting device and method of fabricating the same
Assignee: Toshiba Corp
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Filing: 1990-09-28
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Granted: —
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Expires: 2010-09-28
Abstract
Abstract A semiconductor light-emitting device comprises a light-emitting layer (10) including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, and a light-emitting-layer holding layer (15) consisting of an indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1) provided on an opposite side to a light-outputting side. The holding layer (15) has a sufficiently small light absorption coefficient for the light from the light-emitting layer (10) although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
Inventors
- 👤 Toshihide C/O Intellectual Property Div. Izumiya
- 👤 Yasuo C/O Intellectual Property Division Ohba
- 👤 Ako C/O Intellectual Property Division Hatano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 19:50
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/01; H10H20/011; H10H20/013
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
69 words
A semiconductor light-emitting device comprising: a light-emitting layer (10) including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers; and a light-emitting-layer holding layer (15, 31) consisting of an indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1) provided on an opposite side to a light-outputting side of said light-emitting layer (10).
Claim 2
Dependent Claim
69 words
A semiconductor light-emitting device comprising: a light-emitting layer (10) including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers; and a light-emitting-layer holding layer (15, 31) consisting of an indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1) provided on an opposite side to a light-outputting side of said light-emitting layer (10).
Claim 3
Dependent Claim
20 words
The semiconductor light-emitting device according to claim 1, characterized in that said light-emitting layer (10) has a double heterojunction structure.
Claim 4
Dependent Claim
20 words
The semiconductor light-emitting device according to claim 1, characterized in that said light-emitting layer (10) has a single heterojunction structure.
Claim 5
Dependent Claim
36 words
The semiconductor light-emitting device according to claim 1, characterized in that an intermediate band gap layer (16) for smooth transition of band gap is provided between said light-emitting layer (10) and said holding layer (15, 31).
Claim 6
Dependent Claim
38 words
The semiconductor light-emitting device according to claim 1, characterized in that a contact layer (19, 23) transparent at the wavelength of emitted light is provided between said light-emitting layer (10) and an electrode (11) on said light-outputting side.
Claim 7
Independent Claim
82 words
A method of fabricating a semiconductor light-emitting device, comprising the steps of: depositing light-emitting layer (10), including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, on a substrate by vapor phase epitaxial growth; depositing a light-emitting-layer holding layer (15), consisting of indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1), on said light-emitting layer (10) by vapor phase epitaxial growth; and removing said substrate.
Claim 8
Independent Claim
82 words
A method of fabricating a semiconductor light-emitting device, comprising the steps of: depositing light-emitting layer (10), including a pn junction formed by a plurality of In x Ga y Aℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, on a substrate by vapor phase epitaxial growth; depositing a light-emitting-layer holding layer (15), consisting of indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1), on said light-emitting layer (10) by vapor phase epitaxial growth; and removing said substrate.
Claim 9
Dependent Claim
40 words
The method according to claim 6, characterized by further comprising a step of depositing a buffer layer on said substrate by vapor phase epitaxial growth before growing said light-emitting layer (10), said buffer layer being removed together with said substrate.
Claim 10
Dependent Claim
38 words
The method according to claim 6, characterized in that an intermediate band gap layer (16) for smoothing transition of band gap is deposited between said light-emitting layer (10) and said holding layer (15) by vapor phase epitaxial growth.
Claim 11
Dependent Claim
64 words
The method according to claim 7, characterized by further comprising a step of depositing a second buffer layer between said buffer layer and said light-emitting layer (10) by vapor phase epitaxial growth, said second buffer layer being left as a contact layer (19, 23) transparent at the wavelength of emitted light, between said light-emitting layer (10) and an electrode (11) on a light-outputting side.
Claim 12
Independent Claim
126 words
A method of fabricating a semiconductor light-emitting device, comprising the steps of: depositing a light-emitting-layer holding layer (31), consisting of indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1), on a substrate by liquid phase epitaxial growth, and then growing a thin GaAs protective layer on a surface of said light-emitting-layer holding layer (31) by liquid phase epitaxial growth; heating and evaporizing said GaAs protective layer in a vapor phase chamber to expose a clean surface of said light-emitting-layer holding layer (31), and depositing a light-emitting layer (10), including a pn junction formed by a plurality of In x GayAℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, on said exposed surface by vapor phase epitaxial growth; and removing said substrate.
Claim 13
Independent Claim
126 words
A method of fabricating a semiconductor light-emitting device, comprising the steps of: depositing a light-emitting-layer holding layer (31), consisting of indirect transition type Ga 1-w Aℓ w As (0 ≦ w ≦ 1), on a substrate by liquid phase epitaxial growth, and then growing a thin GaAs protective layer on a surface of said light-emitting-layer holding layer (31) by liquid phase epitaxial growth; heating and evaporizing said GaAs protective layer in a vapor phase chamber to expose a clean surface of said light-emitting-layer holding layer (31), and depositing a light-emitting layer (10), including a pn junction formed by a plurality of In x GayAℓ 1-x-y P (0 ≦ x, y ≦ 1) layers, on said exposed surface by vapor phase epitaxial growth; and removing said substrate.
Claim 14
Dependent Claim
38 words
The method according to claim 10, characterized in that an intermediate band gap layer (16) for smooth transition of band gap is deposited between said holding layer (31) and said light-emitting layer (10) through vapor phase epitaxial growth.
Claim 15
Dependent Claim
40 words
The method according to claim 10, characterized in that a contact layer (19) transparent at the wavelength of emitted light is deposited by vapor phase epitaxial growth between said light-emitting layer (10) and an electrode (11) on a light-outputting side.
References Cited (Backward Citations)
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