US5403751A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing a thin silicon solar cell
Assignee: Canon Inc
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Filing: 1994-06-20
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Granted: 1995-04-04
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Expires: 2014-06-20
Abstract
Abstract A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.
Inventors
- 👤 Shoji Nishida
- 👤 Kenji Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:10
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/165; H10F10/166; H10F71/00; H10F71/121; H10F71/139; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S148/00; Y10S148/153
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
145 words
A process for the production of a solar cell said process comprising the steps of: (i) forming an insulating layer on a silicon wafer, (ii) forming laterally spaced openings in which a surface of the silicon wafer is exposed, (iii) performing crystal growth of monocrystalline silicon regions at the openings which laterally extend over a surface of the insulating layer until the monocrystalline silicon regions collide with each other, (iv) removing at least the exposed portions of the insulating layer through gaps left among the monocrystalline silicon regions, (v) embedding a resin in the gaps, (vi) forming an electrode over the surfaces of the monocrystalline silicon regions and fastening the surface of the electrode to a substrate through an adhesive resin, (vii) separating the monocrystalline silicon regions from the silicon wafer, and (viii) disposing a counter electrode to another surface of the monocrystalline silicon regions.
Claim 2
Dependent Claim
145 words
A process for the production of a solar cell said process comprising the steps of: (i) forming an insulating layer on a silicon wafer, (ii) forming laterally spaced openings in which a surface of the silicon wafer is exposed, (iii) performing crystal growth of monocrystalline silicon regions at the openings which laterally extend over a surface of the insulating layer until the monocrystalline silicon regions collide with each other, (iv) removing at least the exposed portions of the insulating layer through gaps left among the monocrystalline silicon regions, (v) embedding a resin in the gaps, (vi) forming an electrode over the surfaces of the monocrystalline silicon regions and fastening the surface of the electrode to a substrate through an adhesive resin, (vii) separating the monocrystalline silicon regions from the silicon wafer, and (viii) disposing a counter electrode to another surface of the monocrystalline silicon regions.
Claim 3
Dependent Claim
55 words
A process for the production of a solar cell according to claim 1, wherein the monocrystals after growth have a region where the number of plane defects in the horizontal direction in the vicinity of the interface with the insulating layer is less than 1×10 4 cm -1 at the periphery of the spaced opening.
Claim 4
Dependent Claim
30 words
A process for the production of a solar cell according to claim 1, wherein the growth is performed by means of a CVD process while stepwise changing the substrate temperature.
Claim 5
Dependent Claim
25 words
A process for the production of a solar cell according to claim 1, wherein the insulating layer is composed of Si 3 N 4 .
Claim 6
Dependent Claim
34 words
A process for the production of a solar cell according to claim 1, wherein an impurity is added at the initial stage of crystal growth in the step of growing the monocrystalline silicon regions.
Claim 7
Dependent Claim
162 words
A process for the production of a solar cell, said process comprising the steps of: (i) forming an insulating layer of Si 3 N 4 on a silicon wafer, (ii) forming laterally spaced openings in which a surface of the silicon wafer is exposed, (iii) performing crystal growth of monocrystalline silicon regions at the openings which laterally extend over a surface of the insulating layer until the monocrystalline silicon regions collide with each other, by means of a CVD process while stepwise changing the substrate temperature, (iv) removing at least the exposed portions of the insulating layer through gaps left among the monocrystalline silicon regions, (v) embedding a resin in the gaps, (vi) forming an electrode over the surfaces of the monocrystalline silicon regions and fastening the surface of the electrode to a substrate through an adhesive resin, (vii) separating the monocrystalline silicon regions from the silicon wafer, and (viii) disposing a counter electrode to another surface of the monocrystalline silicon regions.
Claim 8
Dependent Claim
162 words
A process for the production of a solar cell, said process comprising the steps of: (i) forming an insulating layer of Si 3 N 4 on a silicon wafer, (ii) forming laterally spaced openings in which a surface of the silicon wafer is exposed, (iii) performing crystal growth of monocrystalline silicon regions at the openings which laterally extend over a surface of the insulating layer until the monocrystalline silicon regions collide with each other, by means of a CVD process while stepwise changing the substrate temperature, (iv) removing at least the exposed portions of the insulating layer through gaps left among the monocrystalline silicon regions, (v) embedding a resin in the gaps, (vi) forming an electrode over the surfaces of the monocrystalline silicon regions and fastening the surface of the electrode to a substrate through an adhesive resin, (vii) separating the monocrystalline silicon regions from the silicon wafer, and (viii) disposing a counter electrode to another surface of the monocrystalline silicon regions.
Claim 9
Dependent Claim
34 words
A process for the production of a solar cell according to claim 6, wherein an impurity is added at the initial stage of crystal growth in the step of growing the monocrystalline silicon regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |