Manufacture of integrated circuit

Abstract

Abstract PURPOSE:To remove crystal defect by forming a gap between the side of an epitaxially grown layer and an insulating film by wet etching, and oxidizing the surface of the grown layer to improve the separating characteristic between elements. CONSTITUTION:After an insulating film 2 is laminated on the entire substrate 1, the film 2 is selectively removed by etching on an element forming region 8 to expose the substrate 1. After an epitaxially grown layer 3 is selectively laminated on the substrate 1, and a gap 10 is formed between the side of the layer 3 and the film 2 by wet etching. An SiO2 film 11 is formed on the substrate 1 by thermally oxidizing it at high temperature. A surface layer 9 which contains crystal defect is modified to the film 11 by thermal oxidation to be expanded to bury the gap 10. The film 11 on the layer 3 is removed by etching. Thus, the separating characteristics between the elements are improved to remove the crystal defect.

Inventors

• 👤 Hajime Koizumi
• 👤 小泉　元
• 👤 Atsushi Nakano
• 👤 淳 中野

Bibliographic Details