Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain insulation isolation films whose height is larger than the width by a method wherein an insulation film is provided selectively on an Si substrate, an epitaxial layer and the first flattening film are superposed, the second film is superposed by removing the first film above the insulation film and in the neighborhood of the film, and the flat surface is etched at an equal speed. CONSTITUTION:The pattern of the SiO2 12 whose height is larger than the width is formed on the P type Si substrate 11, the P type epitaxial layer 13 is superposed, and positive type resist 14 is spin-coated. The part above the film 12 and the neighborhood thereof are removed by selective exposure. Successively, resist 15 is spin-coated over the entire surface. Reactive ion etching is performed on the perfectly flatted surface, thus choosing a condition that the etching speeds of the epitaxial layer 13 and the resists 14, 15 are approximately equal, and the etching is continued until the SiO2 film 12 is exposed. The burial of the SiO2 film 12 whose height is larger than the width in the Si layer 13 and the element formation at isolated regions by this constitution enalbe to contrive to improve the characteristic of various kind of IC elements.

Inventors

• 👤 Katsuhiro Kawabuchi
• 👤 川「淵」　勝弘

Bibliographic Details