US5401692A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for minimizing particle generation on a wafer surface during high pressure oxidation of silicon
Assignee: Texas Instruments Inc
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Filing: 1993-06-15
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Granted: 1995-03-28
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Expires: 2013-06-15
Abstract
Abstract A wafer 2 is supported polished (active) face down in a recess formed in the upper surface of a second wafer 4 which serves as a wafer support. The two wafers 2, 4 are disposed in an atmosphere of steam at 900 DEG C. at a pressure of 500 psi which results in forming an oxide on the polished face of the wafer 2.
Inventors
- 👤 Andrew P. Lane
- 👤 Norris E. Tidwell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:24
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6322; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
80 words
A method for minimizing contaminant particle formation on the active surface of a wafer during semiconductor device fabrication, the method comprising the steps of: supporting a wafer in a depression formed in the upper surface of a wafer support, said wafer being disposed with its active surface facing down in the depression of said wafer support; and introducing steam at a pressure greater than one atmosphere into the region between the active surface of said wafer and said wafer support.
Claim 2
Independent Claim
80 words
A method for minimizing contaminant particle formation on the active surface of a wafer during semiconductor device fabrication, the method comprising the steps of: supporting a wafer in a depression formed in the upper surface of a wafer support, said wafer being disposed with its active surface facing down in the depression of said wafer support; and introducing steam at a pressure greater than one atmosphere into the region between the active surface of said wafer and said wafer support.
Claim 3
Dependent Claim
36 words
A method as recited in claim 1 wherein said fabrication is selected from the group consisting of high pressure steam oxidation of said wafer or high pressure steam reflow of borophosphosilicate glass deposited on said wafer.
Claim 4
Dependent Claim
28 words
A method as recited in claim 1 wherein said depression is substantially circular in shape with a sloping side wall which engages the wafer only along its circumference.
Claim 5
Dependent Claim
16 words
A method as recited in claim 1 wherein the material comprising said wafer support is silicon.
Claim 6
Dependent Claim
31 words
A method as recited in claim 1 wherein the material comprising said wafer support includes material which will not contaminate said wafer during high pressure steam oxidation processing of said wafer.
Claim 7
Dependent Claim
25 words
A method as recited in claim 1, wherein ,steam is present in the oxidizing ambient but does not comprise 100% by volume of said ambient.
Claim 8
Independent Claim
65 words
A method for minimizing contaminant particle generation on a wafer during high pressure oxidation of said wafer in an oxidation reactor comprising: placing said wafer in a recessed portion of a second wafer so that the desired portion to receive said oxidation faces said recessed portion; and introducing an oxidizing gas into the region between said wafer and the recessed portion of said second wafer.
Claim 9
Independent Claim
65 words
A method for minimizing contaminant particle generation on a wafer during high pressure oxidation of said wafer in an oxidation reactor comprising: placing said wafer in a recessed portion of a second wafer so that the desired portion to receive said oxidation faces said recessed portion; and introducing an oxidizing gas into the region between said wafer and the recessed portion of said second wafer.
Claim 10
Dependent Claim
16 words
A method as recited in claim 7 wherein said wafers are pre-cleaned prior to said processing.
References Cited (Backward Citations)
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US4599247A
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US4718975A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-27 | 1998-09-26 | 1999-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-27 | 2002-09-26 | 2003-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-27 | 2006-09-26 | 2007-03-28 | $7700.00 | Window Closed / Lapsed |