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Patent US5399387A successfully refreshed from Google Patents.
US5399387A
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Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
Assignee: Applied Materials Inc
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Filing: 1994-04-13
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Granted: 1995-03-21
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Expires: 2014-04-13
Abstract
Abstract High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300 DEG -350 DEG C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.
Inventors
- 👤 Kam S. Law
- 👤 Robert Robertson
- 👤 Pamela Lou
- 👤 Marc M. Kollrack
- 👤 Angela Lee
- 👤 Dan Maydan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:49
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C03; C03C; C03C17/00; C03C17/22; C03C17/225; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/4557; C23C16/54; C03C2217/00; C03C2217/20; C03C2217/28; C03C2217/281; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152; C03C2218/153
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
72 words
A plasma assisted chemical vapor deposition process comprising depositing a dielectric silicon nitride film from a plasma of a precursor gas comprising silane and ammonia onto a single substrate at a temperature of below about 450° C. and a pressure of at least about 0.8 Torr in a vacuum chamber wherein the spacing between the gas inlet manifold and the substrate is adjusted so that the silicon nitride deposition rate is maximized.
Claim 2
Dependent Claim
72 words
A plasma assisted chemical vapor deposition process comprising depositing a dielectric silicon nitride film from a plasma of a precursor gas comprising silane and ammonia onto a single substrate at a temperature of below about 450° C. and a pressure of at least about 0.8 Torr in a vacuum chamber wherein the spacing between the gas inlet manifold and the substrate is adjusted so that the silicon nitride deposition rate is maximized.
Claim 3
Dependent Claim
18 words
A deposition process according to claim 1 wherein said precursor gas also includes a carrier gas of nitrogen.
Claim 4
Dependent Claim
16 words
A deposition process according to claim 1 wherein the pressure is maintained at about 0.8-2.0 Torr.
Claim 5
Dependent Claim
12 words
A deposition process according to claim 1 wherein said substrate is glass.
Claim 6
Dependent Claim
23 words
A deposition process according to claim 1 wherein said silicon nitride is deposited as a gate dielectric layer over a patterned gate layer.
Claim 7
Dependent Claim
27 words
A deposition process according to claim 1 wherein said silicon nitride is deposited as a gate dielectric layer over a patterned gate layer on a glass substrate.
Claim 8
Dependent Claim
16 words
A deposition process according to claim 1 wherein the temperature is maintained below about 350° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-20 | 1998-09-19 | 1999-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-20 | 2002-09-19 | 2003-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-20 | 2006-09-19 | 2007-03-21 | $7700.00 | Window Closed / Lapsed |