Method of fabricating solar cells with silicon nitride coating

Claim 2

Method of fabricating solid state semiconductor devices comprising: (a) providing a silicon substrate having first and second opposite surfaces; (b) forming a P/N junction in said substrate adjacent to said first surface; (c) subjecting said first surface to a plasma surface treatment so as to etch away a portion of said first surface; (d) subjecting said first surface to a plasma treatment involving (a) an ammonia plasma for producing hydrogen implantation and (b) a combined silane and ammonia plasma treatment for producing additional hydrogen implantation and formation of a polysilazane coating; (e) etching a predetermined two-dimensional pattern in said polysilazane coating so that selected portions of said first surface are not covered by said polysilazane coating; (f) applying a coating of aluminum to said second opposite surface; (g) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum constituent of said aluminum coating to alloy with said silicon substrate; and (h) applying a conductive metal coating to said selected portions of said first surface and said aluminum coating.

Claim 3

Method according to claim 1 further including the step of sintering said conductive metal coating so that said conductive metal and silicon will bond together to form a metal silicide at their interface.

Claim 4

Method according to claim 1 wherein said plasma surface etch treatment involves subjecting said first surface to a fluorine-containing plasma.

Claim 5

Method according to claim 1 wherein step (g) results in densifying said polysilazane coating so that it has a lower etch rate in a selected etchant.

Claim 6

Method according to claim 1 wherein step (g) also results in driving the implanted hydrogen further into the substrate.

Claim 7

Method according to claim 1 wherein step (c) is conducted at room temperature.

Claim 8

Method according to claim 6 wherein said surface etch treatment involves contacting said first surface with a fluorine-containing plasma comprising O 2 , CF 4 , and an inert gas.

Claim 9

Method according to claim 6 wherein said surface etch treatment involves contacting said first surface with a fluorine-containing plasma comprising O 2 and C 2 F 6 .

Claim 10

Method according to claim 1 wherein said first surface of said substrate is etched away to a depth of about 0.005 microns.

Claim 11

Method according to claim 1 wherein said surface etch treatment involves contacting said first surface with a fluorine-containing plasma comprising 0 2 and either CF 4 or C 2 F 6 .

Claim 12

Method of fabricating solid state semiconductor devices comprising: (a) providing a silicon substrate having first and second opposite surfaces; (b) forming a P/N junction in said substrate adjacent to said first surface; (c) subjecting said first surface to a plasma surface etch treatment involving a plasma mixture of O 2 and either CF 4 or C 2 F 6 ; (d) subjecting sard first surface to a further plasma treatment involving (a) an ammonia plasma so as to produce hydrogen implantation and (b) a combined silane and ammonia plasma treatment so as to produce additional hydrogen implantation and formation of a polysilazane coating characterized by the formula Si x H y N z ; (e) covering said polysilazane coating with an adherent coating of a photoresist material; (f) exposing said photoresist coating to radiant energy through a mask defining a predetermined two-dimensional pattern; (g) chemically developing said photoresist so that selected portions of said resist are removed from said polysilazane coating according to said predetermined patterns; (h) removing those portions of said polysilazane coating which are not covered by said photoresist so that selected portions of said first surface are exposed to the atmosphere; (i) applying a coating of aluminum to said second opposite surface; (j) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum constituent of said aluminum coating to alloy with said silicon substrate and to drive the implanted hydrogen further into the substrate; and (k) applying a coating of a conductive and solderable metal to said selected portions of said first surface and said aluminum coating.

Claim 13

Method of fabricating solid state semiconductor devices comprising: (a) providing a silicon substrate having first and second opposite surfaces; (b) forming a P/N junction in said substrate adjacent to said first surface; (c) subjecting said first surface to a plasma surface etch treatment involving a plasma mixture of O 2 and either CF 4 or C 2 F 6 ; (d) subjecting sard first surface to a further plasma treatment involving (a) an ammonia plasma so as to produce hydrogen implantation and (b) a combined silane and ammonia plasma treatment so as to produce additional hydrogen implantation and formation of a polysilazane coating characterized by the formula Si x H y N z ; (e) covering said polysilazane coating with an adherent coating of a photoresist material; (f) exposing said photoresist coating to radiant energy through a mask defining a predetermined two-dimensional pattern; (g) chemically developing said photoresist so that selected portions of said resist are removed from said polysilazane coating according to said predetermined patterns; (h) removing those portions of said polysilazane coating which are not covered by said photoresist so that selected portions of said first surface are exposed to the atmosphere; (i) applying a coating of aluminum to said second opposite surface; (j) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum constituent of said aluminum coating to alloy with said silicon substrate and to drive the implanted hydrogen further into the substrate; and (k) applying a coating of a conductive and solderable metal to said selected portions of said first surface and said aluminum coating.

Claim 14

Method according to claim 11 wherein said first plasma surface treatment involves use of a plasma comprising oxygen and CF 4 .

Claim 15

Method according to claim 11 wherein said first plasma treatment involves use of a plasma comprising O 2 and C 2 F 6 .

Claim 16

Method according to claim 11 wherein the polysilazane coating has a thickness of between about 840 and about 890 Angstroms.

Claim 17

Method according to claim 11 wherein the polysilazane coating has a refractive index of 2.15 after step (j).

Claim 18

Method according to claim 11 wherein said polysilazane coating is represented by the formula Si x H y N z , where x and z each range from about 1.0 to about 1.3, and y ranges from about 0.05 to about 0.30.

Claim 19

Method of fabricating solid state semiconductor devices comprising: (a) providing a silicon substrate having first and second opposite surfaces; (b) forming a P/N junction in said substrate adjacent said first surface; (c) subjecting said first surface to a plasma surface etch treatment involving a plasma mixture comprising O 2 and at least one member of the class consisting of CF 4 and C 2 F 6 so as to etch away a portion of said first surface; (d) subjecting said first surface to a plasma treatment involving (a) an ammonia plasma for producing hydrogen implantation and (b) a combined silane and ammonia plasma treatment for producing additional hydrogen implantation and formation of a polysilazane coating; (e) covering said polysilazane coating with an adherent coating of a photoresist material; (f) exposing said photoresist coating to radiant energy through a mask defining a predetermined two-dimensional pattern; (g) chemically developing said photoresist so that selected portions of said resist are removed from said polysilazane coating according to said predetermined patterns; (h) removing those portions of said polysilazane coating which are not covered by said photoresist so that selected portions of said first surface are exposed to the atmosphere; (i) applying a coating of aluminum to said second opposite surface; (j) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum constituent of said aluminum coating to alloy with said silicon substrate; (k) applying a nickel coating to said selected portions of said first surface; and (l) sintering said nickel coating so that the nickel and silicon react to form a nickel silicide at their interface; whereby said polysilazane coating has a refractive index of about 2.15.

Claim 20

Method of fabricating solid state semiconductor devices comprising: (a) providing a silicon substrate having first and second opposite surfaces; (b) forming a P/N junction in said substrate adjacent said first surface; (c) subjecting said first surface to a plasma surface etch treatment involving a plasma mixture comprising O 2 and at least one member of the class consisting of CF 4 and C 2 F 6 so as to etch away a portion of said first surface; (d) subjecting said first surface to a plasma treatment involving (a) an ammonia plasma for producing hydrogen implantation and (b) a combined silane and ammonia plasma treatment for producing additional hydrogen implantation and formation of a polysilazane coating; (e) covering said polysilazane coating with an adherent coating of a photoresist material; (f) exposing said photoresist coating to radiant energy through a mask defining a predetermined two-dimensional pattern; (g) chemically developing said photoresist so that selected portions of said resist are removed from said polysilazane coating according to said predetermined patterns; (h) removing those portions of said polysilazane coating which are not covered by said photoresist so that selected portions of said first surface are exposed to the atmosphere; (i) applying a coating of aluminum to said second opposite surface; (j) heating said silicon substrate to a temperature and for a time sufficient to cause the aluminum constituent of said aluminum coating to alloy with said silicon substrate; (k) applying a nickel coating to said selected portions of said first surface; and (l) sintering said nickel coating so that the nickel and silicon react to form a nickel silicide at their interface; whereby said polysilazane coating has a refractive index of about 2.15.