US4640001A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solar cell manufacturing method
Assignee: Japan Solar Energy Co Ltd
•
Filing: 1984-12-20
•
Granted: 1987-02-03
•
Expires: 2004-12-20
Abstract
Abstract Solar cell manufacturing method in which a silicon wafer is coated with an antireflection coating of silicon nitride by means of plasma CVD deposition with the silicon wafer kept at a temperature between 250 DEG C. and 600 DEG C. The coating of silicon nitride at such a high temperature results in a decrease in the recombination speed of the minority carriers produced in the silicon wafer during time of light incidence. The conversion efficiency is thus increased to a value ranging from 11.04% to 12.56%.
Inventors
- 👤 Sakae Koiwai
- 👤 Keizo Asaoka
- 👤 Katsuhiko Shirasawa
- 👤 Hiroyuki Watanabe
- 👤 Junichi Honda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:07
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; H10F10/00; H10F10/10; H10F10/14; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
132 words
A method of manufacturing a solar cell composed of a polycrystalline silicon wafer with a silicon nitride film deposited thereon as an antireflection coating, said cell having an improved energy conversion efficiency, said method comprising the steps of: depositing said silicon nitride film on said polycrystaline silicon wafer by a plasma CVD method, said polycrystaline silicon wafer being maintained at a temperature between 350° C. and 500° C.; removing by an etching method portions of said silicon nitride film deposited in said depositing step, the portions to be removed corresponding to the areas where an electrode is to be formed; and forming said electrode at said portions where said silicon nitride film is removed in said second process, whereby a solar cell having an energy conversion efficiency greater than 11.5% is produced.
Claim 2
Independent Claim
132 words
A method of manufacturing a solar cell composed of a polycrystalline silicon wafer with a silicon nitride film deposited thereon as an antireflection coating, said cell having an improved energy conversion efficiency, said method comprising the steps of: depositing said silicon nitride film on said polycrystaline silicon wafer by a plasma CVD method, said polycrystaline silicon wafer being maintained at a temperature between 350° C. and 500° C.; removing by an etching method portions of said silicon nitride film deposited in said depositing step, the portions to be removed corresponding to the areas where an electrode is to be formed; and forming said electrode at said portions where said silicon nitride film is removed in said second process, whereby a solar cell having an energy conversion efficiency greater than 11.5% is produced.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-02 | 1990-08-04 | 1991-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-02 | 1994-08-04 | 1995-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-02 | 1998-08-04 | 1999-02-03 | $7700.00 | Window Closed / Lapsed |