Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
194 words
A package structure for a semiconductor device having a lead electrode comprising: an electrically conductive cap having a flange at a circumference thereof, a circuit substrate having a ceramic substrate member, a first surface covered with said conductive cap and sealed air-tightly, a second surface having electrically conductive patterns for providing thereon external electrodes, and projections of high-temperature solder having a melting point of approximately 240°-330° C. are formed on said conductive patterns, wherein said circuit substrate comprises: a first electrically conductive layer on said first surface of said circuit substrate extending along an outer circumference of said circuit substrate, a second electrically conductive layer covering said second surface of said circuit substrate, said second conductive layer being formed substantially entirely over said second surface of said circuit substrate except having a portion for said lead electrode of said semiconductor device, a plurality of electrically conductive through-holes, disposed uniformly in said circuit substrate directly below said first conductive layer and said flange, for connecting said first conductive layer with said second conductive layer, and electrically conductive sealing means for sealing contact surfaces of said flange of the conductive cap to said first conductive layer.
Claim 2
Dependent Claim
194 words
A package structure for a semiconductor device having a lead electrode comprising: an electrically conductive cap having a flange at a circumference thereof, a circuit substrate having a ceramic substrate member, a first surface covered with said conductive cap and sealed air-tightly, a second surface having electrically conductive patterns for providing thereon external electrodes, and projections of high-temperature solder having a melting point of approximately 240°-330° C. are formed on said conductive patterns, wherein said circuit substrate comprises: a first electrically conductive layer on said first surface of said circuit substrate extending along an outer circumference of said circuit substrate, a second electrically conductive layer covering said second surface of said circuit substrate, said second conductive layer being formed substantially entirely over said second surface of said circuit substrate except having a portion for said lead electrode of said semiconductor device, a plurality of electrically conductive through-holes, disposed uniformly in said circuit substrate directly below said first conductive layer and said flange, for connecting said first conductive layer with said second conductive layer, and electrically conductive sealing means for sealing contact surfaces of said flange of the conductive cap to said first conductive layer.
Claim 3
Dependent Claim
22 words
A package structure according to claim 1, wherein the projections of high temperature solder have heights in a range of 0.2-1.0 mm.
Claim 4
Dependent Claim
21 words
A package structure according to claim 1, wherein said conductive patterns for providing thereon said external electrodes have a circular shape.
Claim 5
Dependent Claim
24 words
A package structure according to claim 1, wherein said conductive patterns for providing thereon said external electrodes are defined by an electrically conductive material.
Claim 6
Dependent Claim
28 words
A package structure according to claim 1, wherein each of said projections of high-temperature solder is formed frusto-hemispherically to provide a flat surface at free end portion thereof.
Claim 7
Dependent Claim
32 words
A package structure according to claim 1, wherein a metallized layer is formed to provide an electrically conductive pattern, and said projections of the high-temperature solder are formed on said metallized layer.