Patent US5393577A successfully refreshed from Google Patents.
US5393577A
Expired / Lapsed
US
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Method for forming a patterned layer by selective chemical vapor deposition
Assignee: NEC Corp
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Filing: 1991-06-19
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Granted: 1995-02-28
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Expires: 2011-06-19
Abstract
Abstract In a method for forming a patterned layer by the selective CVD, the material gas for forming a patterned layer is introduced into a CVD chamber in which a semiconductor substrate is set, and then the CVD process is carried out at a predetermined temperature of the substrate while a light having a predetermined wavelength is irradiated selectively through a mask having a predetermined pattern on the substrate. The CVD layer grows on the area of the surface of the substrate where the light is not irradiated, however, the CVD growth is hindered on the area where the light is irradiated, by the presence of a thin layer which prevent the CVD growth, for example.
Inventors
- 👤 Fumihiko Uesugi
- 👤 Shunji Kishida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:27
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
A method for forming a patterned layer by selective CVD, comprising the steps of: providing a substrate in a CVD chamber; introducing an organometallic gas into said CVD chamber; and heating said substrate to a temperature at which said organometallic gas is thermally decomposed to produce vapors of a metal and an organic substance, while irradiating light onto areas of a surface of said substrate, a first CVD layer being deposited onto said areas, and wherein a second CVD layer is formed from deposition of said metal from said organometallic gas onto remaining areas of said substrate, said first CVD layer blocking the growth of said second CVD layer on said areas.
Claim 2
Independent Claim
112 words
A method for forming a patterned layer by selective CVD, comprising the steps of: providing a substrate in a CVD chamber; introducing an organometallic gas into said CVD chamber; and heating said substrate to a temperature at which said organometallic gas is thermally decomposed to produce vapors of a metal and an organic substance, while irradiating light onto areas of a surface of said substrate, a first CVD layer being deposited onto said areas, and wherein a second CVD layer is formed from deposition of said metal from said organometallic gas onto remaining areas of said substrate, said first CVD layer blocking the growth of said second CVD layer on said areas.
Claim 3
Dependent Claim
34 words
The method for forming a patterned layer by selective CVD, according to claim 1, wherein said irradiating of said light is carried out first, and then said heating of said substrate is carried out.
Claim 4
Dependent Claim
29 words
The method for forming a patterned layer by selective CVD, according to claim 1, wherein said organometallic gas introduced into said CVD chamber is Al(CH 3 ) 2 H.
Claim 5
Dependent Claim
31 words
The method for forming a patterned layer by selective CVD, according to claim 1, wherein said substrate is heated to a temperature in a range of 150° C. to 300° C.
Claim 6
Dependent Claim
29 words
The method for forming a patterned layer by selective CVD, according to claim 1, wherein said light is irradiated onto said substrate through a mask having a predetermined pattern.
Claim 7
Dependent Claim
44 words
The method for forming a patterned layer by selective CVD, according to claim 1, wherein said organometallic gas introduced into said CVD chamber is Al(CH 3 ) 2 H; and wherein said first CVD layer formed on said substrate is an AlC thin layer.
Claim 8
Dependent Claim
60 words
The method for forming a patterned layer by selective CVD, according to claim 1, wherein said second CVD layer is formed, when said substrate is heated, as said patterned layer on a poly-Si layer which is formed on said substrate; and wherein said poly-Si layer is etched by using said second CVD layer as a mask after heating said substrate.
Claim 9
Dependent Claim
36 words
The method for forming a patterned layer by selective CVD, according to claim 7, wherein said poly-Si layer is etched optically by using a mask which is used for irradiating said light after heating said substrate.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-02-27 | 1998-08-29 | 1999-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |