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US5389566A
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Method of forming a ferromagnetic memory device
Assignee: Apple Inc
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Filing: 1994-03-28
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Granted: 1995-02-14
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Expires: 2014-03-28
Abstract
Abstract A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control current flow between the first and second current electrodes (44 and 46). A ferromagnetic region (68) is used to store a logic value via magnetic flux. Two conductive layers (62 and 70) and a conductive spacer (78) form a sense conductor for device (15). The sense conductor is used to externally provide the logic value stored in the device (15). A conductive layer (82) forms a program/erase line for altering the logic value stored in the device (15). A logic one or a logic zero is stored in ferromagnetic region (68) depending upon a direction and a magnitude of current flow through conductive layer (82).
Inventors
- 👤 Craig S. Lage
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:24
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02; G11C11/06; G11C11/06007; G11C11/06014; G11C11/06021; G11C11/06028; G11C11/06035; G11C11/06042
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
131 words
A method for forming a ferromagnetic memory cell comprising the steps of: providing a substrate having a surface; forming a transistor having a first current electrode formed within the substrate and exposed at the surface of the substrate, a second current electrode formed within the substrate and exposed at the surface of the substrate, and a control electrode which lies between the first current electrode and the second current electrode and controls current flow between the first current electrode and the second current electrode; forming a ferromagnetic region overlying the substrate and positioned in close proximity to the transistor; forming an opening in the ferromagnetic region; and forming a first conductive region within the opening in the ferromagnetic region, the first conductive region being electrically coupled to the first current electrode.
Claim 2
Independent Claim
131 words
A method for forming a ferromagnetic memory cell comprising the steps of: providing a substrate having a surface; forming a transistor having a first current electrode formed within the substrate and exposed at the surface of the substrate, a second current electrode formed within the substrate and exposed at the surface of the substrate, and a control electrode which lies between the first current electrode and the second current electrode and controls current flow between the first current electrode and the second current electrode; forming a ferromagnetic region overlying the substrate and positioned in close proximity to the transistor; forming an opening in the ferromagnetic region; and forming a first conductive region within the opening in the ferromagnetic region, the first conductive region being electrically coupled to the first current electrode.
Claim 3
Dependent Claim
46 words
The method of claim 1 wherein the step of forming the transistor further comprises the step of: forming the transistor as a bipolar transistor wherein the first current electrode is an emitter, the second current electrode is a collector, and the control electrode is a base.
Claim 4
Dependent Claim
56 words
The method of claim 1 wherein the step of forming the transistor further comprises the step of: forming the transistor as a field effect transistor wherein the first current electrode and the second current electrode are respectively either a source and a drain or a drain and a source, and the control electrode is a gate.
Claim 5
Dependent Claim
29 words
The method of claim 1 wherein the step of forming the first conductive region further comprises the step of: using chemical vapor deposition to form the first conductive region.
Claim 6
Dependent Claim
88 words
The method of claim 1 wherein the formation of the ferromagnetic memory cell further comprises the steps of: forming the first conductive region as a bit line conductor for erasing and programming the ferromagnetic region, the first conductive region having a periphery; and forming a second conductive region laterally adjacent and around the periphery of the first conductive region, the second conductive region being adjacent the opening in the ferromagnetic region and functioning as a sense line for externally providing a logic value stored by the ferromagnetic region.
Claim 7
Dependent Claim
28 words
The method of claim 5 wherein the step of forming the second conductive region further comprises the step of: forming the second conductive region as a sidewall spacer.
Claim 8
Dependent Claim
39 words
The method of claim 5 wherein the step of forming the second conductive region further comprises the step of: isolating the second conductive region from the ferromagnetic region by forming a sidewall dielectric region laterally adjacent the ferromagnetic region.
Claim 9
Independent Claim
67 words
A method for forming a memory cell comprising the steps of: forming a transistor having a first current electrode, a second current electrode, and a control electrode; forming a dielectric layer overlying the transistor; forming a ferromagnetic core overlying the transistor; and forming a bit line conductor which is coupled to the first current electrode of the transistor and passes in close proximity to the ferromagnetic core.
Claim 10
Independent Claim
67 words
A method for forming a memory cell comprising the steps of: forming a transistor having a first current electrode, a second current electrode, and a control electrode; forming a dielectric layer overlying the transistor; forming a ferromagnetic core overlying the transistor; and forming a bit line conductor which is coupled to the first current electrode of the transistor and passes in close proximity to the ferromagnetic core.
Claim 11
Dependent Claim
26 words
The method of claim 8 wherein the step of forming the ferromagnetic core further comprises: forming the ferromagnetic core as an annular region overlying the transistor.
Claim 12
Dependent Claim
35 words
The method of claim 8 wherein the step of forming the transistor further comprises: forming the transistor as a device selected from the group consisting of: a bipolar transistor, a metal oxide semiconductor (MOS) transistor.
Claim 13
Dependent Claim
24 words
The method of claim 8 further comprising a step of: forming a sidewall dielectric region between the ferromagnetic core and the bit line conductor.
Claim 14
Dependent Claim
34 words
The method of claim 8 further comprising a step of: forming a sense line conductor between the ferromagnetic core and the bit line conductor to detect a binary value stored in the ferromagnetic core.
Claim 15
Independent Claim
103 words
A method for forming a plurality of memory cells on an integrated circuit, the method comprising the steps of: providing an integrated circuit substrate; forming a plurality of transistors on the substrate, each transistor within the plurality of transistors having a current electrode; forming a plurality of ferromagnetic regions wherein each ferromagnetic region in the plurality of ferromagnetic regions corresponds to a unique one transistor in the plurality of transistors, each ferromagnetic region in the plurality of ferromagnetic regions which corresponds to a unique one transistor in the plurality of transistors being coupled to the unique one transistor via a conductive bit line.
Claim 16
Independent Claim
103 words
A method for forming a plurality of memory cells on an integrated circuit, the method comprising the steps of: providing an integrated circuit substrate; forming a plurality of transistors on the substrate, each transistor within the plurality of transistors having a current electrode; forming a plurality of ferromagnetic regions wherein each ferromagnetic region in the plurality of ferromagnetic regions corresponds to a unique one transistor in the plurality of transistors, each ferromagnetic region in the plurality of ferromagnetic regions which corresponds to a unique one transistor in the plurality of transistors being coupled to the unique one transistor via a conductive bit line.
Claim 17
Dependent Claim
31 words
The method of claim 13 further comprising: forming a dielectric layer around the ferromagnetic regions in the plurality of ferromagnetic regions to isolate the ferromagnetic regions from the plurality of transistors.
Claim 18
Dependent Claim
41 words
The method of claim 13 further comprising: forming a plurality of sense lines, each sense line in the plurality of sense lines being in close proximity to one ferromagnetic region in the plurality of ferromagnetic regions and one conductive bit line.
Claim 19
Independent Claim
109 words
A method for forming a ferromagnetic memory circuit comprising the step of: forming a transistor having a first current electrode, a second current electrode for receiving a power supply voltage, and a control electrode; forming a ferromagnetic core positioned in close proximity to the transistor wherein the ferromagnetic core and the transistor are formed overlying the same substrate material; forming a power supply line conductor coupled to the second current electrode of the transistor; forming a bit line conductor passing through the ferromagnetic core and being coupled to the first current electrode of said transistor; and forming a word line conductor coupled to the control electrode of the transistor.
Claim 20
Independent Claim
109 words
A method for forming a ferromagnetic memory circuit comprising the step of: forming a transistor having a first current electrode, a second current electrode for receiving a power supply voltage, and a control electrode; forming a ferromagnetic core positioned in close proximity to the transistor wherein the ferromagnetic core and the transistor are formed overlying the same substrate material; forming a power supply line conductor coupled to the second current electrode of the transistor; forming a bit line conductor passing through the ferromagnetic core and being coupled to the first current electrode of said transistor; and forming a word line conductor coupled to the control electrode of the transistor.
Claim 21
Dependent Claim
18 words
The method of claim 16 further comprising: forming a dielectric region around a portion of the ferromagnetic core.
Claim 22
Dependent Claim
18 words
The method of claim 16 further comprising: forming the ferromagnetic core directly overlying a portion of the transistor.
Claim 23
Independent Claim
50 words
A method for forming an integrated circuit memory cell comprising the steps of: providing a semiconductor substrate; forming a transistor device within the semiconductor substrate; forming a dielectric layer overlying the transistor device; and forming an annular ferromagnetic core overlying the dielectric layer and being coupled to the transistor device.
Claim 24
Independent Claim
50 words
A method for forming an integrated circuit memory cell comprising the steps of: providing a semiconductor substrate; forming a transistor device within the semiconductor substrate; forming a dielectric layer overlying the transistor device; and forming an annular ferromagnetic core overlying the dielectric layer and being coupled to the transistor device.
Claim 25
Dependent Claim
41 words
The method of claim 19 further comprising: forming a conductive bit line through the ferromagnetic core and in contact with the transistor, the conductive bit line and a magnetic field from the ferromagnetic core coupling the ferromagnetic core to the transistor.
Claim 26
Dependent Claim
31 words
The method of claim 19 further comprising: forming a gate electrode of the transistor as a word line which is used to select the ferromagnetic core for program or erase operations.
Claim 27
Independent Claim
109 words
A method for forming a semiconductor magnetic memory device comprising the steps of: forming a substrate; forming a transistor formed from the substrate and having a first current electrode overlying the substrate, a second current electrode overlying the substrate and being separated from the first current electrode by a channel region, and a gate electrode which overlies the channel region; forming a first dielectric layer formed overlying the transistor; forming a ferromagnetic region formed overlying the first dielectric layer, the ferromagnetic region having a sidewall; forming a second dielectric layer formed overlying the ferromagnetic region; and forming a first conductive region formed adjacent the sidewall of the ferromagnetic region.
Claim 28
Independent Claim
109 words
A method for forming a semiconductor magnetic memory device comprising the steps of: forming a substrate; forming a transistor formed from the substrate and having a first current electrode overlying the substrate, a second current electrode overlying the substrate and being separated from the first current electrode by a channel region, and a gate electrode which overlies the channel region; forming a first dielectric layer formed overlying the transistor; forming a ferromagnetic region formed overlying the first dielectric layer, the ferromagnetic region having a sidewall; forming a second dielectric layer formed overlying the ferromagnetic region; and forming a first conductive region formed adjacent the sidewall of the ferromagnetic region.
Claim 29
Dependent Claim
23 words
The method of claim 22 further comprising a step of: forming a dielectric sidewall spacer laterally adjacent the sidewall of the ferromagnetic region.
Claim 30
Dependent Claim
30 words
The method of claim 22 further comprising a step of: forming a second conductive region which is in close proximity to the ferromagnetic region and adjacent the first conductive region.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-13 | 1998-08-15 | 1999-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-13 | 2002-08-15 | 2003-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-13 | 2006-08-15 | 2007-02-14 | $7700.00 | Window Closed / Lapsed |