IGFET current mirror amplifiers with nested-cascode input and output stages

Claim 2

A current mirror amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that has a width-to-length ratio in prescribed proportions to the width-to-length ratios of the channels of the others of said first and second and third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor so that identical current flows through the channels of said first and second field effect transistors, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor so that identical current flows through the channels of said third and fourth field effect transistors; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors; structural differences between said first and second field effect transistors which are the only means for causing the source-to-gate voltage of said first transistor to be larger in predetermined amount than the source-to-gate voltage of said second transistor in response to serial conduction of current through their respective channels; and structural differences between said third and fourth field effect transistors which are the only means for causing the source-to-gate voltage of said third transistor to be larger in predetermined amount than the source-to-gate voltage of said fourth transistor in response to serial conduction of current through their respective channels.

Claim 3

A current mirror amplifier as set forth in claim 1, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors consists of a connection without substantial intervening impedance of said input terminal to said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 4

A current mirror amplifier as set forth in claim 1, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors comprises the source follower connection of a fifth field effect transistor of the same conductivity type as said first and second and third and fourth field effect transistors.

Claim 5

A current mirror amplifier as set forth in claim 1 further comprising: fifth and sixth field effect transistors of the same conductivity type as said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective gate electrodes connected from said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective channels between respective source electrodes and respective drain electrodes, the source electrode of said fifth field effect transistor connecting to said common terminal, the drain electrode of said fifth field effect transistor connecting to the source electrode of said sixth field effect transistor; a second output terminal to which the drain electrode of said sixth field effect transistor connects; and structural differences between said fifth and sixth field effect transistors for causing the source-to-gate voltage of said fifth transistor to be larger in predetermined amount than the source-to-gate voltage of said sixth transistor in response to serial conduction of current through their respective channels.

Claim 6

A current mirror amplifier as set forth in claim 4, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors consists of a connection without substantial intervening impedance of said input terminal to said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 7

A current mirror amplifier as set forth in claim 4, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors comprises the source follower connection of a seventhth field effect transistor of the same conductivity type as said first and second and third and fourth and fifth and sixth field effect transistors.

Claim 8

A current mirror amplifier as set forth in claim 4, wherein the channels of said third and said fifth field effect transistors have respective width-to-length ratios that are the same.

Claim 9

A current mirror amplifier as set forth in claim 7, wherein the channels of said first and said third field effect transistors have respective width-to-length ratios that are the same.

Claim 10

A current mirror amplifier as set forth in claim 1, wherein the channels of said first and said third field effect transistors have respective width-to-length ratios that are the same.

Claim 11

A current amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source, electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that has a width-to-length ratio in prescribed proportions to the width-to-length ratios of the channels of the others of said first and second and third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors; structural differences between said first and second field effect transistors for causing the source-to-gate voltage of said first transistor to be larger in predetermined amount than the source-to-gate voltage of said second transistor in response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor; and structural differences between said third and fourth field effect transistors for causing the source-to-gate voltage of said third transistor to be larger in predetermined amount than the source-to-gate voltage of said fourth transistor in response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the third and fourth field effect transistors are respectively formed are differently doped so as to cause the barrier height of the third field effect transistor to exceed that the fourth field effect transistor.

Claim 12

A current amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source, electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that has a width-to-length ratio in prescribed proportions to the width-to-length ratios of the channels of the others of said first and second and third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors; structural differences between said first and second field effect transistors for causing the source-to-gate voltage of said first transistor to be larger in predetermined amount than the source-to-gate voltage of said second transistor in response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor; and structural differences between said third and fourth field effect transistors for causing the source-to-gate voltage of said third transistor to be larger in predetermined amount than the source-to-gate voltage of said fourth transistor in response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the third and fourth field effect transistors are respectively formed are differently doped so as to cause the barrier height of the third field effect transistor to exceed that the fourth field effect transistor.

Claim 13

A current mirror amplifier as set forth in claim 1, wherein the width-to-length ratio of the channel of said second field effect transistor is larger than the width-to-length ratio of the channel of said first field effect transistor by a factor m larger than unity, and wherein the width-to-length ratio of the channel of said fourth field effect transistor is larger than the width-to-length ratio of the channel of said third field effect transistor by said factor m.

Claim 14

A current minor amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode over a respective region of semiconductor of a prescribed doping, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes, the channels of said third and fourth field effect transistors having the same width-to-length ratio which is n times that of the channels of said first and second field effect transistors, n being a positive number, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor, regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor by a prescribed amount, and regions of semiconductor in which the channels of the third and fourth field effect transistors are formed being differently doped so as to cause the barrier height of the third field effect transistor to exceed that of the fourth field effect transistor by said prescribed amount; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; and an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 15

A current minor amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode over a respective region of semiconductor of a prescribed doping, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes, the channels of said third and fourth field effect transistors having the same width-to-length ratio which is n times that of the channels of said first and second field effect transistors, n being a positive number, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor, regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor by a prescribed amount, and regions of semiconductor in which the channels of the third and fourth field effect transistors are formed being differently doped so as to cause the barrier height of the third field effect transistor to exceed that of the fourth field effect transistor by said prescribed amount; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; and an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 16

A current mirror amplifier as set forth in claim 12, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors consists of a connection without substantial intervening impedance of said input terminal to said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 17

A current mirror amplifier as set forth in claim 12, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors comprises the source follower connection of a fifth field effect transistor of the same conductivity type as said first and second and third and fourth field effect transistors.

Claim 18

A current mirror amplifier as set forth in claim 12 further comprising: fifth and sixth field effect transistors of the same conductivity type as said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective gate electrodes connected from said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective channels between respective source electrodes and respective drain electrodes, the source electrode of said fifth field effect transistor connecting to said common terminal, the drain electrode of said fifth field effect transistor connecting to the source electrode of said sixth field effect transistor, regions of semiconductor in which the channels of the fifth and sixth field effect transistors are formed being differently doped so as to cause the barrier height of the fifth field effect transistor to exceed that of the sixth field effect transistor by said prescribed amount; and a second output terminal to which the drain electrode of said sixth field effect transistor connects.

Claim 19

A current mirror amplifier as set forth in claim 15 wherein, wherein the channels of said fifth and sixth field effect transistors have the same width-to-length ratio which is p times that of the channels of said first and second field effect transistors.

Claim 20

A current mirror amplifier as set forth in claim 16 wherein p equals n.

Claim 21

A current mirror amplifier as set forth in claim 17, wherein n and p are each one.

Claim 22

A current mirror amplifier as set forth in claim 12, wherein the channels of said first and said third field effect transistors have respective width-to-length ratios that are the same.

Claim 23

A current mirror amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that is formed in a region of semiconductor of the same prescribed doping as the others of said first and second and third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor so that identical current flows through the channels of said first and second field effect transistors, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor so that identical current flows through the channels of said third and fourth field effect transistors; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; and an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors, the width-to-length ratio of the channel of said second field effect transistor being larger than the width-to-length ratio of the channel of said first field effect transistor by a factor m larger than unity, and the width-to-length ratio of the channel of said fourth field effect transistor being larger than the width-to-length ratio of the channel of said third field effect transistor by said factor m.

Claim 24

A current mirror amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that is formed in a region of semiconductor of the same prescribed doping as the others of said first and second and third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor so that identical current flows through the channels of said first and second field effect transistors, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor so that identical current flows through the channels of said third and fourth field effect transistors; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; and an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors, the width-to-length ratio of the channel of said second field effect transistor being larger than the width-to-length ratio of the channel of said first field effect transistor by a factor m larger than unity, and the width-to-length ratio of the channel of said fourth field effect transistor being larger than the width-to-length ratio of the channel of said third field effect transistor by said factor m.

Claim 25

A current minor amplifier as set forth in claim 20, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors consists of a connection without substantial intervening impedance of said input terminal to said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 26

A current mirror amplifier as set forth in claim 21, wherein the channels of said first and said third field effect transistors have width-to-length ratios that are the same.

Claim 27

A current mirror amplifier as set forth in claim 20, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors comprises the source follower connection of a fifth field effect transistor of the same conductivity type as said first and second and third and fourth field effect transistors.

Claim 28

A current mirror amplifier as set forth in claim 23, wherein the channels of said first and said third field effect transistors have width-to-length ratios that are the same.

Claim 29

A current mirror amplifier as set forth in claim 20 further comprising: fifth and sixth field effect transistors of the same conductivity type as said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective gate electrodes connected from said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective channels between respective source electrodes and respective drain electrodes, the source electrode of said fifth field effect transistor connecting to said common terminal, the drain electrode of said fifth field effect transistor connecting to the source electrode of said sixth field effect transistor, the width-to-length ratio of the channel of said sixth field effect transistor being larger than the width-to-length ratio of the channel of said fifth field effect transistor by said factor m; and a second output terminal to which the drain electrode of said sixth field effect transistor connects.

Claim 30

A current mirror amplifier as set forth in claim 25, wherein the channels of said first, said third and said fifth field effect transistors have respective width-to-length ratios that are the same.

Claim 31

A current mirror amplifier as set forth in claim 20, wherein the channels of said first and said third field effect transistors have respective width-to-length ratios that are the same.

Claim 32

A current amplifier comprising: first and second and third and fourth and fifth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that a width-to-length ratio in prescribed proportions to the width-to-length ratios of the channels of the others of said first and second third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field transistor, the drain electrode of said third field effect transistor connector to the source electrode of said fourth field effect transistor; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third and fifth field effect transistors connect without substantial intervening impedance; a bias terminal for receiving a bias current of the same polarity as said input current, to which bias terminal the drain electrode of said fifth field effect transistor connects, a potential appearing at said bias terminal responsive to said bias current and being applied to an interconnection of the gate electrodes of said second and fourth and fifth field effect transistors; structural differences between said first and second field effect transistors for causing the source-to-gate voltage of said first transistor to be larger in predetermined amount than the source-to-gate voltage of said second transistor in response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor; structural differences between said third and fourth field effect transistors for causing the source-to-gate voltage of said third transistor to be larger in predetermined amount than the source-to-gate voltage of said fourth transistor response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the third and fourth field effect transistors are respectively formed being differently doped so as to cause the barrier height of the third field effect transistor to exceed that of the fourth field effect transistor; and a region of semiconductor in which the channel of said fifth field effect transistor is formed, said regions of semiconductor in which the channels of the first and third and fifth field effect transistors are respectively formed being doped similarly to each other.

Claim 33

A current amplifier comprising: first and second and third and fourth and fifth field effect transistors of the same conductivity type, each having a respective gate electrode, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes that a width-to-length ratio in prescribed proportions to the width-to-length ratios of the channels of the others of said first and second third and fourth field effect transistors, the drain electrode of said first field effect transistor connected to the source electrode of said second field transistor, the drain electrode of said third field effect transistor connector to the source electrode of said fourth field effect transistor; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third and fifth field effect transistors connect without substantial intervening impedance; a bias terminal for receiving a bias current of the same polarity as said input current, to which bias terminal the drain electrode of said fifth field effect transistor connects, a potential appearing at said bias terminal responsive to said bias current and being applied to an interconnection of the gate electrodes of said second and fourth and fifth field effect transistors; structural differences between said first and second field effect transistors for causing the source-to-gate voltage of said first transistor to be larger in predetermined amount than the source-to-gate voltage of said second transistor in response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor; structural differences between said third and fourth field effect transistors for causing the source-to-gate voltage of said third transistor to be larger in predetermined amount than the source-to-gate voltage of said fourth transistor response to serial conduction of current through their respective channels, which structural differences comprise regions of semiconductor in which the channels of the third and fourth field effect transistors are respectively formed being differently doped so as to cause the barrier height of the third field effect transistor to exceed that of the fourth field effect transistor; and a region of semiconductor in which the channel of said fifth field effect transistor is formed, said regions of semiconductor in which the channels of the first and third and fifth field effect transistors are respectively formed being doped similarly to each other.

Claim 34

A current mirror amplifier as set forth in claim 28, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors consists of a connection without substantial intervening impedance of said input terminal to said interconnection of the gate electrodes of said first and third field effect transistors.

Claim 35

A current mirror amplifier as set forth in claim 28, wherein the width-to-length ratio of the channel of said second field effect transistor is larger than the width-to-length ratio of the channel of said first field effect transistor by a factor m larger than unity, and wherein the width-to-length ratio of the channel of said fourth field effect transistor is larger than the width-to-length ratio of the channel of said third field effect transistor by said factor m.

Claim 36

A current mirror amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode over a respective region of semiconductor of a prescribed doping, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes, the channels of said third and fourth field effect transistors having the same width-to-length ratio which is n times that of the channels of said first and second field effect transistors, n being a positive number, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor so that identical current flows through the channels of said first and second field effect transistors, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor so that identical current flows through the channels of said third and fourth field effect transistors, regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor by a prescribed amount, and regions of semiconductor in which the channels of the third and fourth field effect transistors are formed being differently doped so as to cause the barrier height of the third field effect transistor to exceed that of the fourth field effect transistor by said prescribed amount; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; and an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 37

A current mirror amplifier comprising: first and second and third and fourth field effect transistors of the same conductivity type, each having a respective gate electrode over a respective region of semiconductor of a prescribed doping, a respective source electrode, a respective drain electrode, and a respective channel between its source and drain electrodes, the channels of said third and fourth field effect transistors having the same width-to-length ratio which is n times that of the channels of said first and second field effect transistors, n being a positive number, the drain electrode of said first field effect transistor connected to the source electrode of said second field effect transistor so that identical current flows through the channels of said first and second field effect transistors, the drain electrode of said third field effect transistor connected to the source electrode of said fourth field effect transistor so that identical current flows through the channels of said third and fourth field effect transistors, regions of semiconductor in which the channels of the first and second field effect transistors are respectively formed being differently doped so as to cause the barrier height of the first field effect transistor to exceed that of the second field effect transistor by a prescribed amount, and regions of semiconductor in which the channels of the third and fourth field effect transistors are formed being differently doped so as to cause the barrier height of the third field effect transistor to exceed that of the fourth field effect transistor by said prescribed amount; an input terminal for receiving input current, to which input terminal the drain electrode of said second field effect transistor connects, and at which input terminal an input potential appears responsive to said input current; means for applying said input potential to the gate electrodes of said first and third field effect transistors; a first output terminal to which the drain electrode of said fourth field effect transistor connects; a common terminal to which the source electrodes of said first and third field effect transistors connect without substantial intervening impedance; and an interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 38

A current mirror amplifier as set forth in claim 31, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors consists of a connection without substantial intervening impedance of said input terminal to said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors.

Claim 39

A current mirror amplifier as set forth in claim 31, wherein said means for applying said input potential to the gate electrodes of said first and third field effect transistors comprises the source follower connection of a fifth field effect transistor of the same conductivity type as said first and second and third and fourth field effect transistors.

Claim 40

A current mirror amplifier as set forth in claim 31 further comprising: fifth and sixth field effect transistors of the same conductivity type as said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective gate electrodes connected from said interconnection of the gate electrodes of said first and second and third and fourth field effect transistors, said fifth and sixth field effect transistors having respective channels between respective source electrodes and respective drain electrodes, the source electrode of said fifth field effect transistor connecting to said common terminal, the drain electrode of said fifth field effect transistor connecting to the source electrode of said sixth field effect transistor, regions of semiconductor in which the channels of the fifth and sixth field effect transistors are formed being differently doped so as to cause the barrier height of the fifth field effect transistor to exceed that of the sixth field effect transistor by said prescribed amount; and a second output terminal to which the drain electrode of said sixth field effect transistor connects.

Claim 41

A current mirror amplifier as set forth in claim 34, wherein the channels of said fifth and sixth field effect transistors have the same width-to-length ratio which is p times that of the channels of said first and second field effect transistors.