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US5385632A
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Method for manufacturing integrated semiconductor devices
Assignee: AT&T Labs Inc
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Filing: 1993-06-25
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Granted: 1995-01-31
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Expires: 2013-06-25
Abstract
Abstract An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.
Inventors
- 👤 Keith W. Goossen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:42
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/18; H10W; H10W90/00; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/743; H10P72/7432; Y; Y10; Y10S; Y10S438/00; Y10S438/933; Y10S438/977
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
63 words
The method of forming an integrated semiconductor device, comprising the steps of: bonding conductors of a first semiconductor device having a substrate to conductors on a second semiconductor device having a substrate; flowing an etch-resist to fill a space between the first semiconductor device and the second semiconductor device; allowing the etch-resist to dry; and removing the substrate from the second semiconductor device.
Claim 2
Independent Claim
63 words
The method of forming an integrated semiconductor device, comprising the steps of: bonding conductors of a first semiconductor device having a substrate to conductors on a second semiconductor device having a substrate; flowing an etch-resist to fill a space between the first semiconductor device and the second semiconductor device; allowing the etch-resist to dry; and removing the substrate from the second semiconductor device.
Claim 3
Dependent Claim
25 words
The method as in claim 1, wherein the step of flowing includes flowing the etch-resist between and around said conductors and around said semiconductor devices.
Claim 4
Dependent Claim
25 words
The method as in claim 1, wherein the step of flowing includes flowing the etch-resist between the first and second semiconductor devices via capillary action.
Claim 5
Dependent Claim
34 words
The method as in claim 1, wherein the step of bonding includes forming surfaces of any one of a group comprising In, Au, and mixtures of In, Au, Sn, and Pb on the conductors.
Claim 6
Dependent Claim
19 words
The method as in claim 1, wherein the step of bonding includes forming surfaces of In on the conductors.
Claim 7
Dependent Claim
11 words
The method as in claim 1, wherein said conductors are metallic.
Claim 8
Dependent Claim
34 words
The method as in claim 1, wherein the step of flowing includes flowing sufficient etch-resist so that said etch-resist, when dried, forms a structural support from one of the semiconductor devices to the other.
Claim 9
Dependent Claim
29 words
The method as in claim 1, wherein the step of removing includes leaving enough etch-resist to enhance the structural support of one of the semiconductor devices to the other.
Claim 10
Dependent Claim
44 words
The method as in claim 1, wherein: the step of flowing includes flowing the etch-resist between and around said semiconductor devices; and the step of removing includes leaving enough etch-resist to enhance the structural support of one of the semiconductor devices to the other.
Claim 11
Dependent Claim
26 words
The method as in claim 1, wherein the second semiconductor device includes a GaAs/AlGaAs composite material system, and the first semiconductor device includes a Si material.
Claim 12
Dependent Claim
36 words
The method as in claim 1, wherein the second semiconductor device is a photonic device and the first semiconductor device is a Si device, and said removing step includes removing the substrate from the photonic device.
Claim 13
Dependent Claim
33 words
The method as in claim 1, wherein the second semiconductor device includes a modulator having a GaAs/AlGaAs multiple quantum well modulator unit and said first semiconductor device includes a Si integrated circuit chip.
Claim 14
Dependent Claim
36 words
The method as in claim 1, wherein the second semiconductor device includes a modulator having a GaAs/AlGaAs 850 nm λ multiple quantum well modulator unit and said first semiconductor device includes a Si integrated circuit chip.
Claim 15
Dependent Claim
16 words
The method as in claim 1, wherein the step of removing includes removing said substrate chemically.
Claim 16
Dependent Claim
25 words
The method as in claim 1, wherein the step of removing includes removing oxides of said second semiconductor with a solution before removing the substrate.
Claim 17
Dependent Claim
26 words
The method as in claim 15, wherein the step of removing includes removing oxides of said second semiconductor with a KOH solution before removing the substrate.
Claim 18
Dependent Claim
24 words
The method as in claim 1, wherein the step of removing includes removing with a 100:1 H 2 O 2 :NH 4 OH compound.
Claim 19
Dependent Claim
62 words
The method as in claim 1, wherein said second semiconductor device includes: a GaAs portion forming said substrate of said second semiconductor device; an n-doped AlGaAs layer; a multiple quantum well modulator unit including GaAs wells and AlGaAs barriers; a p-doped AlGaAs layer; and a plurality of gold contacts, one contacting said n-doped AlGaAs layer and one contacting said p-doped AlGaAs layer.
Claim 20
Dependent Claim
20 words
A method as in claim 1, wherein said flowing step includes flowing said etch-resist in the form of a photoresist.
Claim 21
Dependent Claim
23 words
A method as in claim 1, wherein the removing step includes removing the etch-resist after removing the substrate from said second semiconductor device.
Claim 22
Dependent Claim
26 words
A method as in claim 1, wherein the etch resist is a photoresist, and the step of removing includes selectively removing a portion of the photoresist.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-01-30 | 1998-08-01 | 1999-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-30 | 2002-08-01 | 2003-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-30 | 2006-08-01 | 2007-01-31 | $7700.00 | Window Closed / Lapsed |