US5385624A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for treating substrates
Assignee: Tokyo Electron Ltd
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Filing: 1991-11-29
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Granted: 1995-01-31
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Expires: 2011-11-29
Abstract
Abstract A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O 2 +CF 4 ) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.
Inventors
- 👤 Yutaka Amemiya
- 👤 Akihito Toda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:53
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; H10; H10P; H10P50/00; H01J37/32357; H01J37/32431; H01J37/32623; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3345; H01J2237/3348
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
193 words
A substrate treating apparatus, comprising: a chamber including a substrate treating section and a plasma generating section; an ion trap interposed between the substrate treating section and the plasma generating section; a support disposed within the substrate treating section for supporting a substrate; an adjustment means, connected to said support, for adjusting a distance between said substrate and said ion trap; a first gas source containing a first gas for an etching process; a second gas source containing a second gas for an ashing process; supply means, connected to the first and second gas sources and to the plasma generating section, for supplying said first gas and said second gas to said substrate treating section after said first gas and said second gas have passed from said plasma section through said ion trap; an exhaust means for exhausting said substrate treating section; and a process control means, connected to said plasma generating section, said supply means, and said adjustment means, for controlling said plasma generating section, said supply means and said adjustment means such that the etching process and the ashing process are simultaneously performed on the substrate in said substrate treating section.
Claim 2
Dependent Claim
193 words
A substrate treating apparatus, comprising: a chamber including a substrate treating section and a plasma generating section; an ion trap interposed between the substrate treating section and the plasma generating section; a support disposed within the substrate treating section for supporting a substrate; an adjustment means, connected to said support, for adjusting a distance between said substrate and said ion trap; a first gas source containing a first gas for an etching process; a second gas source containing a second gas for an ashing process; supply means, connected to the first and second gas sources and to the plasma generating section, for supplying said first gas and said second gas to said substrate treating section after said first gas and said second gas have passed from said plasma section through said ion trap; an exhaust means for exhausting said substrate treating section; and a process control means, connected to said plasma generating section, said supply means, and said adjustment means, for controlling said plasma generating section, said supply means and said adjustment means such that the etching process and the ashing process are simultaneously performed on the substrate in said substrate treating section.
Claim 3
Dependent Claim
159 words
A substrate treating apparatus according to claim 1, wherein: said first gas contained within said first gas source is a gas which has a first predetermined life for neutral radicals of said first gas which have been subjected to a treatment in said plasma section; said second gas contained within said second gas source is a gas which has a second predetermined life, shorter than said first predetermined life, for neutral radicals of said second gas which have been subjected to a treatment in said plasma section; and said adjustment means adjusts the distance between said ion trap and the substrate supported by said support such that as the substrate moves farther away from ion trap due to a movement by said adjustment means, an affect of the neutral radicals of said second gas on said substrate is reduced by an amount greater than an affect of the neutral radicals of said first gas on said substrate is reduced.
Claim 4
Dependent Claim
52 words
A substrate treatment apparatus according to claim 2, wherein said first gas contained in said first gas source is fluorine and said first gas source is a fluorine gas source, and said second gas contained in said second gas source is oxygen and said second gas source is an oxygen gas source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-30 | 1998-08-01 | 1999-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-30 | 2002-08-01 | 2003-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-30 | 2006-08-01 | 2007-01-31 | $7700.00 | Window Closed / Lapsed |