EP0451943A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Plasma processing method and apparatus
Assignee: International Business Machines Corp
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Filing: 1991-03-06
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Granted: —
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Expires: 2011-03-06
Abstract
Abstract A plasma processing method for use with plasma processing apparatus (10), comprises the steps of generating plasma containing electrically-neutral reaction species in a plasma generating area (40) and processing a workpiece (30) by said reaction species in a processing area (60). The method further comprises generating a mirror magnetic field between said plasma generating area (40) and said processing area (60) so as to restrict charged particles from moving from said plasma generating area (40) to said processing area (60).
Inventors
- 👤 Takaki Saitoh
- 👤 Akira Masuyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:27
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; H01J37/32357; H01J37/32431; H01J37/32623; H01J37/3266
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
76 words
A plasma processing method comprising the steps of generating plasma containing electrically-neutral reaction species in a plasma generating area (40), and processing a workpiece (30) by said reaction species in a processing area (60); characterised in that the method further comprises generating a mirror magnetic field between said plasma generating area (40) and said processing area (60) so as to restrict charged particles from moving from said plasma generating area (40) to said processing area (60).
Claim 2
Dependent Claim
27 words
A plasma processing method according to Claim 1, wherein said workpiece (30) is a semiconductor wafer having photoresist on its surface, and said processing comprises photoresist ashing.
Claim 3
Dependent Claim
35 words
A plasma processing method according to Claim 1, wherein said mirror magnetic field is generated by a coil (20) installed in an area (50) between said plasma generating area (40) and said processing area (60).
Claim 4
Dependent Claim
35 words
A plasma processing method according to Claim 1, wherein the direction of said mirror magnetic field is parallel to that of a gas flow from said plasma generating area (40) to said processing area (60).
Claim 5
Dependent Claim
39 words
A plasma processing method according to Claim 1 or 4, wherein said plasma generating area (40) is located at an upper position, said processing area (60) being located at a lower position, and the gas flow is directed downwardly.
Claim 6
Dependent Claim
35 words
A plasma processing method according to any preceding claim further including at least partly blocking charged particles by a baffle (22) installed between the mirror magnetic field generating area (50) and said processing area (60).
Claim 7
Dependent Claim
36 words
A plasma processing method according to any preceding claim further including at least partly blocking charged particles by a baffle (22') installed between the mirror magnetic field generating area (50) and the plasma generating area (60).
Claim 8
Dependent Claim
74 words
Plasma processing apparatus (10) comprising a plasma generating area (40) for generating plasma containing electrically-neutral reaction species, and a processing area (60) for processing a workpiece (30) with said reaction species, characterised in that the apparatus (10) further comprises: mirror magnetic field generating means (20) provided between said plasma generating area (40) and said processing area (60) to restrict charged particles from moving from said plasma generating area (40) to said processing area (60).
Claim 9
Dependent Claim
28 words
Plasma processing apparatus (10) as claimed in Claim 8, wherein said workpiece (30) is a semiconductor wafer having photoresist on its surface, and said processing is photoresist ashing.
Claim 10
Dependent Claim
36 words
Plasma processing apparatus (10) as claimed in Claim 8, wherein said mirror magnetic field generating means (20) is a coil installed in an area (50) between said plasma generating area (40) and said processing area (60).
Claim 11
Dependent Claim
36 words
Plasma processing apparatus (10) as claimed in Claim 8, wherein the direction of said mirror magnetic field is parallel to that of a gas flow from said plasma generating area (40) to said processing area (60).
Claim 12
Dependent Claim
38 words
Plasma processing apparatus (10) as claimed in Claim 8 or 11, wherein said plasma generating area (40) is located at an upper position, said processing area (60) being located at a lower position, and the gas flows downward.
Claim 13
Dependent Claim
41 words
Plasma processing apparatus (10) as claimed in Claim 8, 9, 10, 11 or 12, further including a baffle (22) installed between said mirror magnetic field generating area (50) and at said processing area (60) to at least partly block charged particles.
Claim 14
Dependent Claim
42 words
Plasma processing apparatus (10) as claimed in Claim 8, 9, 10, 11, 12 or 13, further including a baffle (22') installed between said mirror magnetic field generating area (50) and said plasma generating area (40) to at least partly block charged particles.
References Cited (Backward Citations)
No citation records indexed.
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